Abstract: A memory device includes a substrate, first semiconductor fin, second semiconductor fin, first gate structure, second gate structure, first gate spacer, and a second gate spacer. The first gate structure crosses the first semiconductor fin. The second gate structure crosses the second semiconductor fin, the first gate structure extending continuously from the second gate structure, in which in a top view of the memory device, a width of the first gate structure is greater than a width of the second gate structure. The first gate spacer is on a sidewall of the first gate structure. The second gate spacer extends continuously from the first gate spacer and on a sidewall of the second gate structure, in which in the top view of the memory device, a width of the first gate spacer is less than a width of the second gate spacer.

Abstract: An inspiration system related symptom sensing system includes a patch and a processor. The patch includes at least one vibrator and a plurality of receivers. Each of the receivers is configured to generate a reference vibration signal corresponding to the vibrator and a vibration signal corresponding to an inspiration system of an organism. The processor is configured to determine a relative position of each of the receivers related to the inspiration system of the organism based on the reference vibration signals, the vibration signals, and a plurality of positional relationships of the vibrator corresponding to each of the receivers. The processor is configured to generate a spatial position corresponding to the inspiration system and a corresponding symptom type by using a classification model based on the abnormal signals and the relative positions corresponding to the receivers.

Abstract: A pharmaceutical composition for dry powder inhalation includes an active ingredient and a first pharmacologically acceptable excipient. The active ingredient includes bedaquiline or a pharmaceutically acceptable salt thereof. The first pharmacologically acceptable excipient includes amino acid, polysaccharide, phospholipid, polylactic acid, polylactic acid copolymer, or a combination thereof. A method of preparing a pharmaceutical composition for dry powder inhalation is also provided.

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. A structure in a semiconductor device is identified as including a test object for an APT procedure. A target region is identified in the structure where an APT specimen will be obtained. The target region is analyzed to determine whether a challenging component feature exists therein. A challenging component may include a hard-to-evaporate material, a hollow region, or a material unidentifiable with respect to the test object, or other structural features that pose a challenge to a successful APT analysis. If it is determined that a challenging component exists in the target region, the challenging component is replaced with a more suitable material before the APT specimen is prepared.

Abstract: An electric assistive device is provided. The electric assistive device includes a power wheel module, an upper control module, and a power control module. The upper control module is configured to provide a dynamic characteristic parameter. The power control module is coupled to the power wheel module and the upper control module. In response to operating the electric assistive device in an auxiliary walking mode, the power control module adaptively generates a first vehicle speed parameter according to a dynamic characteristic parameter and a force estimation parameter. The power control module generates a voltage control signal according to the first vehicle speed parameter. The power control module drives the power wheel module according to the voltage control signal.

Abstract: A method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.

Abstract: A method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An optical element drive mechanism is provided. The optical element drive mechanism includes an immovable part, a movable part, and a drive assembly. The movable part is movable relative to the immovable part. The movable part holds an optical element with an optical axis. The drive assembly drives the movable part to move relative to the immovable part. At least part of the drive assembly is disposed on the immovable part.

Abstract: The invention relates to a power tool with an electrically controlled commutating assembly comprising: an electrically controlled commutating assembly and a control unit; the electrically controlled commutating assembly has an electromagnetic unit; the electromagnetic unit is capable of performing a change in displacement due to electromagnetic action; the control unit has a control member, the control member is capable of changing a working direction of a power tool, and displacement of the electromagnetic unit is capable of actuating the control member of the control unit to make the power tool switch the working direction.

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

Abstract: The invention is an electric commutating ratchet tool comprising: a head; a ratchet mechanism with a rotating member and a latch member; the rotating member is capable of rotating, the latch member is capable of displacing and controlling rotation direction of the rotating member; and a commutating device with a commutating member, a magnetic driving member and a magnetic actuating unit; the commutating member is capable of displacing to abut against the latch member; the magnetic actuating unit is opposite to the magnetic driving member, either the magnetic actuating unit or the magnetic driving member is disposed on the commutating member; the magnetic actuating unit is at least one electromagnet; magnetic direction is changed through each of the electromagnets, so that the magnetic driving member is magnetically driven to change a position of the latch member.

Abstract: The present disclosure provides an optical element driving mechanism, which includes a movable part, a fixed assembly, and a driving assembly. The movable part is configured to be connected to an optical element. The fixed assembly has a first opening, and the movable part is movable relative to the fixed assembly along a first axis. The driving assembly is configured to drive the movable part to move between a first position and a second position relative to the fixed assembly, so that the optical element selectively overlaps the first opening.

Abstract: A stator of a brushless motor has an iron core, a bobbin, and a winding assembly. The iron core has multiple stator poles mounted on an interior annular surface of a core body and spaced apart from each other. The bobbin is mounted on one of two open ends of the core body and has a substrate, at least one neutral connector mounted on an upper surface of the substrate, and at least one neutral solder pad mounted in the at least one neutral connector. The winding assembly is formed by one wire wound on multiple stator poles and the connectors. The winding assembly is electrically connected to the at least one neutral solder pad.

Abstract: A method of fabricating a semiconductor device includes providing a system that includes a susceptor configured to retain a semiconductor substrate, a heating element, and a reflector integrated with the heating element, where the reflector includes a surface defined by a plurality of circumferential ridges having a separation distance that varies from a top portion of the reflector to a bottom portion of the reflector. The method further includes heating the semiconductor substrate and forming an epitaxial layer on the heated semiconductor substrate, where the heating includes emitting thermal energy from the heating element and reflecting the thermal energy from the surface of the reflector onto the semiconductor substrate, where an amount of the thermal energy received by an edge of the semiconductor substrate is more than an amount of the thermal energy received by a center of the semiconductor substrate.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.