Abstract: A display device includes a flexible display panel and a housing. The housing includes connectors and couplers. Each of the connectors includes two accommodating slots. The connectors and the couplers are sequentially arranged in a staggered manner and connected with one another. Each of the couplers includes a coupling body and two cylinders. The two cylinders are connected to two sides of the coupling body. Each of the cylinders is disposed in the accommodating slot of the adjacent connector. A radial interval of an opening of the accommodating slot is greater than a thickness of the coupling body and is less than a diameter of the cylinder. While the housing is being bent along with the flexible display panel, the adjacent two connectors are being away from each other until the cylinder in the accommodating slot is blocked by the corresponding opening.

Abstract: A semiconductor fabrication system includes a wafer carrier configured to carry a wafer thereon. A radiation source is positioned above the wafer carrier. The radiation source is configured to emit thermal radiation. A plurality of reflectors is positioned above, and aligned with, an edge region of the wafer. The reflectors each have a reflective coating configured to reflect the thermal radiation. A plurality of separately-controllable motors is coupled to the reflectors, respectively. The motors are each configured to cause its respective reflector to rotate in a counterclockwise direction or a clockwise direction so as to redirect the thermal radiation back toward the edge region of the wafer. A controller is communicatively coupled to the plurality of motors. The controller is configured to control each of the motors separately to cause each motors to rotate independently of other motors.

Abstract: Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Abstract: A multi-unit receiving mechanism includes a bottom case, a first cover body, and a second cover body. The first cover body is pivotally connected to the bottom case for being rotatable to cover the bottom case, so as to define a first receiving space therebetween. A first electronic unit is removably held in the first receiving space. The second cover is pivotally connected to the first cover body for being rotatable to cover the first cover body and the bottom case, so as to define a second receiving space therebetween. A second electronic unit is removably held in the second receiving space. A second cover removably holds a third electronic unit.

Abstract: A substrate processing chamber, having a processing surface, includes a guide fixed in place relative to the substrate processing chamber and a movable pyrometer connected to the guide. The movable pyrometer is movable along a radial axis that extends approximately between a center of the processing surface and an outer surface of the processing surface. The movable pyrometer is operable to monitor temperatures inside the substrate processing chamber along the radial axis.

Abstract: A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: A fixing device for junction wires of a stator of a motor includes a box and flat conductors. The box has circular grooves radially arranged at a side of the box and terminal accommodating grooves located at a peripheral edge at the side of the box. Each of the flat conductors has an arc-shaped holding portion and two terminals connected to an upper edge of the arc-shaped holding portion and horizontally bended. The arc-shaped holding portions are accommodated in the circular grooves. The terminals are exposed out of the circular grooves and partially accommodated in the terminal accommodating grooves, respectively. At least one of the terminals has an extending section extending over at least one of the circular grooves. A distance between the extending section and the arc-shaped holding portion of the flat conductor in the at least one circular groove is a fixed value.

Abstract: A motor rotor includes a body and at least one magnet. The body has an even number of protrusions. The outer contour of the cross-sections of the protrusions conforms to at least a portion of the periphery of the relation: r=k×sin ((n/d)×?), where k is related to the maximum distance between the outer contour of the cross-sections of the protrusions and the center of the body, n is related to the number of protrusions, and d is related to the curvature of the outer contour. The magnet is disposed in the body.

Abstract: A stator assembly is used to be assembled to form a stator core. The stator assembly includes a tooth and a yoke. One end of the tooth is connected to the yoke. The yoke has an inner side, an outer side, a first coupling side, and a second coupling side. The first coupling side further includes a first engaging structure, and the second coupling side further includes a second engaging structure. The second engaging structure corresponds the first engaging structure. The outer side has a groove. The groove has a side surface and a bottom surface. An angle is defined between the side surface and the bottom surface, and the angle is in a range from 135° to 165°.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: A method for detecting the presence and location of defects over a substrate is disclosed. In an embodiment, the method may include: forming a semiconductor material in a plurality of openings in a reference wafer using an epitaxial growth process; performing one or more measurements on the reference wafer to obtain a baseline signal; forming a plurality of gate stacks and stressor regions in a plurality of substrates; after forming the plurality of gate stacks, forming the semiconductor material in a plurality of openings in a batch wafer; performing the one or more measurements on the batch wafer to obtain a batch signal; comparing the batch signal to the baseline signal; and determining whether a defect in present in the plurality of substrates based on the comparison.

Abstract: Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: A sliding stand assembly comprises a back cover, a sliding engaging member, a spring, a first stand and a second stand. The sliding engaging member is located at a first surface of the back cover. The sliding engaging member comprises first and second protruding portions. The first stand is slidably pivoted to the back cover. The first stand comprises first to third concave portions. The first concave portion has first and second sub-portions. The second stand is pivoted to the first stand and the back cover. When the first stand slides to a positioning location, the first protruding portion is engaged with the first sub-portion and the second protruding portion is located in the second concave portion. When the first protruding portion moves from the first sub-portion to the second sub-portion, the second protruding portion moves to the third concave portion to be positioned.

Abstract: A semiconductor fabrication system includes a wafer carrier configured to carry a wafer thereon. A radiation source is positioned above the wafer carrier. The radiation source is configured to emit thermal radiation. A plurality of reflectors is positioned above, and aligned with, an edge region of the wafer. The reflectors each have a reflective coating configured to reflect the thermal radiation. A plurality of separately-controllable motors is coupled to the reflectors, respectively. The motors are each configured to cause its respective reflector to rotate in a counterclockwise direction or a clockwise direction so as to redirect the thermal radiation back toward the edge region of the wafer. A controller is communicatively coupled to the plurality of motors. The controller is configured to control each of the motors separately to cause each motors to rotate independently of other motors.

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Abstract: A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.