Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip (IC). The method includes forming a first fin of semiconductor material and a second fin of semiconductor material within a semiconductor substrate. A gate structure is formed over the first fin and source/drain regions are formed on or within the first fin. The source/drain regions are formed on opposite sides of the gate structure. One or more pick-up regions are formed on or within the second fin. The source/drain regions respectively have a first width measured along a first direction parallel to a long axis of the first fin and the one or more pick-up regions respectively have a second width measured along the first direction. The second width is larger than the first width.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor is of a first type in a first layer and includes a gate extending in a first direction and a first active region extending in a second direction perpendicular to the first direction. The second transistor is of a second type arranged in a second layer over the first layer and includes the gate and a second active region extending in the second direction. The semiconductor device further includes a first conductive line in a third layer between the first and second layers. The first conductive line electrically connects a first source/drain region of the first active region to a second source/drain region of the second active region. The gate comprises an intermediate portion disposed between the first active region and the second active region, wherein the first conductive line crosses the gate at the intermediate portion.

Abstract: A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.

Abstract: A system for manufacturing an integrated circuit includes a processor coupled to a non-transitory computer readable medium configured to store executable instructions. The processor is configured to execute the instructions for generating a layout design of the integrated circuit that has a set of design rules. The generating of the layout design includes generating a set of gate layout patterns corresponding to fabricating a set of gate structures of the integrated circuit, generating a cut feature layout pattern corresponding to a cut region of a first gate of the set of gate structures of the integrated circuit, generating a first conductive feature layout pattern corresponding to fabricating a first conductive structure of the integrated circuit, and generating a first via layout pattern corresponding to a first via. The cut feature layout pattern overlaps a first gate layout pattern of the set of gate layout patterns.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: A display may have an array of pixels. Display driver circuitry may supply data and control signals to the pixels. Each pixel may have seven transistors, a capacitor, and a light-emitting diode such as an organic light-emitting diode. The seven transistors may receive control signals using horizontal control lines. Each pixel may have first and second emission enable transistors that are coupled in series with a drive transistor and the light-emitting diode of that pixel. The first and second emission enable transistors may be coupled to a common control line or may be separately controlled so that on-bias stress can be effectively applied to the drive transistor. The display driver circuitry may have gate driver circuits that provide different gate line signals to different rows of pixels within the display. Different rows may also have different gate driver strengths and different supplemental gate line loading structures.

Abstract: An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.

Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: A method of manufacturing a semiconductor device, including: forming a plurality of gate strips, each gate strip is a gate terminal of a transistor; forming a plurality of first contact vias connected to a part of the gate strips; forming a plurality of first metal strips above the plurality of gate strips; connecting one of the first metal strips to one of the first contact vias; forming a plurality of second metal strips above the plurality of first metal strips, wherein the plurality of second metal strips are co-planar, each second metal strip and one of the first metal strips are crisscrossed from top view; a length between two adjacent gate strips is twice as a length between two adjacent second metal strips, and a length of said one of the first metal strips is smaller than two and a half times as the length between two adjacent gate strips.