Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure also includes a top electrode formed over the MTJ cell; and a first sidewall spacer layer formed on a top surface of the MTJ cell and an outer sidewall surface of the top electrode.

Abstract: A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure includes a top electrode formed over the MTJ cell and a passivation layer surrounding the top electrode. The passivation layer has a recessed portion that is lower than a top surface of the top electrode. The semiconductor memory structure further includes a cap layer formed on the top electrode and the passivation layer, wherein the cap layer is formed in the recessed portion.

Abstract: A substrate structure for a micro electro mechanical system (MEMS) device, a semiconductor structure and a method for fabricating the same are provided. In various embodiments, the substrate structure for the MEMS device includes a substrate, the MEMS device, and an anti-stiction layer. The MEMS device is over the substrate. The anti-stiction layer is on a surface of the MEMS device, and includes amorphous carbon, polytetrafluoroethene, hafnium oxide, tantalum oxide, zirconium oxide, or a combination thereof.

Abstract: A connecting structure connecting a first device and a second device rigidly but readily demountably comprises a housing having a top cover and a bottom cover to form an internal space. A connector which has an engagement block, a sliding block, and an insert block engages with the second device. A push button having a knob movably mounted on the housing, a sprung hooking structure having a guiding slot engaging with the sliding block, and a hook engaging with the second device provide demountable. The push button resists the engagement block via a through hole of the top cover, the connecting structure being combined with the connector to link with the hooking structure.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a gate structure over a first surface of the substrate, and a source region and a drain region in the substrate adjacent to the gate structure. The semiconductor structure further includes a channel region interposing the source and drain regions and underlying the gate structure. The semiconductor structure further includes a first layer over a second surface opposite to a first surface of the substrate, and a second layer over the first layer. The semiconductor structure further includes a sensing film over the channel region. The first opening and the second opening form a contiguous opening.

Abstract: A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure also includes a top electrode formed over the MTJ cell; and a first sidewall spacer layer formed on a top surface of the MTJ cell and an outer sidewall surface of the top electrode.

Abstract: A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure includes a top electrode formed over the MTJ cell and a passivation layer surrounding the top electrode. The passivation layer has a recessed portion that is lower than a top surface of the top electrode. The semiconductor memory structure further includes a cap layer formed on the top electrode and the passivation layer, wherein the cap layer is formed in the recessed portion.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a gate structure over a first surface of the substrate, and a source region and a drain region in the substrate adjacent to the gate structure. The semiconductor structure further comprises a channel region interposing the source and drain regions and underlying the gate structure. The semiconductor structure further comprises a first layer over a second surface of the substrate opposite to the first surface, and a second layer over the first layer. The semiconductor structure further comprises a sensing film over the channel region and at least a portion of the first and second layers, and a well over the sensing film and cutting off the first layer and the second layer.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: A connecting structure connecting a first device and a second device rigidly but readily demountably comprises a housing having a top cover and a bottom cover to form an internal space. A connector which has an engagement block, a sliding block, and an insert block engages with the second device. A push button having a knob movably mounted on the housing, a sprung hooking structure having a guiding slot engaging with the sliding block, and a hook engaging with the second device provide demountable. The push button resists the engagement block via a through hole of the top cover, the connecting structure being combined with the connector to link with the hooking structure.

Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.

Abstract: A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.

Abstract: A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a gate structure over a first surface of the substrate, and a source region and a drain region in the substrate adjacent to the gate structure. The semiconductor structure further comprises a channel region interposing the source and drain regions and underlying the gate structure. The semiconductor structure further comprises a first layer over a second surface of the substrate opposite to the first surface, and a second layer over the first layer. The semiconductor structure further comprises a sensing film over the channel region and at least a portion of the first and second layers, and a well over the sensing film and cutting off the first layer and the second layer.