Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Abstract: A system for the intelligent obstacle avoidance of multi-axis robot arm includes a multi-axis robot arm and a host device. The multi-axis robot arm includes a plurality of knuckles and a plurality of connecting arms. The plurality of the connecting arms are alternately connected with the plurality of the knuckles. The host device is electrically connected with the multi-axis robot arm. The host device includes a database device, an operation control module and a signal transmission module. The database device, the operation control module and the signal transmission module are electrically connected. The signal transmission module transmits a control signal to the multi-axis robot arm for performing an optimum obstacle avoidance posture.

Abstract: The present invention is related to a method of reducing tobacco addiction in a smoking subject with Lactobacillus fermentum GKF3, including daily administering an oral composition containing the Lactobacillus fermentum GKF3 to the smoking subject, in which the oral composition reduces the total amount of the nicotine metabolites in urine.

Abstract: A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

Abstract: An obstacle avoidance method for a robot arm is provided, including a modeling step, a collecting and evaluating coordinates step, an obtaining control parameter step, an establishing an occupation function step, and a finding an obstacle avoiding posture step. The present invention pre-stores the data obtained in performing the modeling step, the step of collecting and evaluating coordinates, the step of obtaining control parameter, and the step of establishing the occupation function into a database, thereby allowing the robot arm to quickly evaluate whether a collision behavior will occur in subsequent execution of a task. If a collision will occur, the robot arm executes the step of the finding the obstacle avoiding posture to dodge obstacles. The invention uses a non-contact approach for anti-collision design, which can improve the shortcomings faced by the existing contact type anti-collision design.

Abstract: A low numerical aperture fiber output diode laser module, which having several independent diode lasers, and collimated and converged the light beam, for the coupling the light to the core optical fiber with a core diameter of 105 um and a numerical aperture of 0.12. Compared with general products with a numerical aperture of 0.22, the light output angle is reduced to 55%, and use a general blue laser diode for verification. Use an optical software for facilitating the design and optimization of the parameters of the optical lens module.

Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Abstract: In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

Abstract: The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

Abstract: A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

Abstract: A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

Abstract: The present disclosure relates to as external composition for wound healing containing a Lactobacillus fermentation product, which comprises a Lactobacillus fermentation product as an effective component. The Lactobacillus fermentation product is a bacteria-free concentrated filtrate from fermentation of Lactobacillus plantarum and the effective component is loaded onto a pharmaceutically acceptable absorbent carrier or carrying agent. The external composition for wound healing has anti-inflammatory and healing promoting effects on a skin wound after applied directly onto the skin wound.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a waveguide and a heater structure. The waveguide is disposed on a substrate and comprises an active region that extends continuously along a first distance. The heater structure overlies the waveguide. The heater structure comprises a conductive structure over the active region and a vertical structure disposed between the conductive structure and the substrate. The vertical structure comprises a conductive upper vertical segment and a lower vertical segment. The conductive structure and the conductive upper vertical segment continuously laterally extend across a second distance that is greater than or equal to the first distance. The first distance is greater than a width of the conductive structure.

Abstract: A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

Abstract: The present invention provides a Lactobacillus fermentum GKF3, a composition comprising the strain and their use, in which the aforementioned Lactobacillus fermentum GKF3, deposited with accession numbers of BCRC 910824 and CGMCC 15203, can increase the levels of dopamine or/and serotonin in brain tissues, thereby improving the symptoms of the psychataxia such as decreased focus.

Abstract: In some embodiments, the present disclosure relates to a modulator device that includes an input terminal configured to receive impingent light. A first waveguide has a first output region and a first input region that is coupled to the input terminal. A second waveguide is optically coupled to the first waveguide and has second input region and a second output region that is coupled to the input terminal. An output terminal coupled to the first output region of the first waveguide and the second output region of the second waveguide is configured to provide outgoing light that is modulated. A heater structure is configured to provide heat to the first waveguide to induce a temperature difference between the first and second waveguides. A gas-filled isolation structure is proximate to the heater structure and is configured to thermally isolate the second waveguide from the heat provided to the first waveguide.

Abstract: A display device includes a substrate, gate lines, a driving circuit, and auxiliary gate lines. The substrate has a display area. The gate lines are disposed on the display area, and are in parallel with a first edge of the display area. The gate lines include a first gate line which is farthest from the first edge. The driving circuit is disposed adjacent to the first edge. The auxiliary gate lines substantially perpendicular to the gate lines are connected to the gate lines, and are in parallel with a second edge of the display area. The auxiliary gate lines include a first auxiliary gate line and at least one auxiliary gate line. The first auxiliary gate line is configured to connect the first gate line to the driving circuit. The at least one auxiliary gate line is disposed between the second edge and the first auxiliary gate line.

Abstract: Structures and methods including a waveguide having a cladding layer surrounding a core layer disposed over a substrate, a cavity extending into the substrate adjacent the waveguide, a fiber disposed in the cavity, and an isolation space extending into the substrate and disposed under the waveguide. A plurality of holes may extend through the cladding layer adjacent the core layer.

Abstract: Various embodiments of the present disclosure are directed towards a modulator device including a first waveguide and a heater structure. An input terminal is configured to receive impingent light. The first waveguide has a first output region and a first input region coupled to the input terminal. A second waveguide is optically coupled to the first waveguide. The second waveguide has a second output region and a second input region coupled to the input terminal. An output terminal is configured to provide outgoing light that is modulated based on the impingent light. The output terminal is coupled to the first output region and the second output region. The heater structure overlies the first waveguide. A bottom surface of the heater structure is aligned with a bottom surface of the first waveguide. The first waveguide is spaced laterally between sidewalls of the heater structure.