Abstract: The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

Abstract: A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

Abstract: A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

Abstract: The present disclosure relates to as external composition for wound healing containing a Lactobacillus fermentation product, which comprises a Lactobacillus fermentation product as an effective component. The Lactobacillus fermentation product is a bacteria-free concentrated filtrate from fermentation of Lactobacillus plantarum and the effective component is loaded onto a pharmaceutically acceptable absorbent carrier or carrying agent. The external composition for wound healing has anti-inflammatory and healing promoting effects on a skin wound after applied directly onto the skin wound.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a waveguide and a heater structure. The waveguide is disposed on a substrate and comprises an active region that extends continuously along a first distance. The heater structure overlies the waveguide. The heater structure comprises a conductive structure over the active region and a vertical structure disposed between the conductive structure and the substrate. The vertical structure comprises a conductive upper vertical segment and a lower vertical segment. The conductive structure and the conductive upper vertical segment continuously laterally extend across a second distance that is greater than or equal to the first distance. The first distance is greater than a width of the conductive structure.

Abstract: The present invention provides a Lactobacillus fermentum GKF3, a composition comprising the strain and their use, in which the aforementioned Lactobacillus fermentum GKF3, deposited with accession numbers of BCRC 910824 and CGMCC 15203, can increase the levels of dopamine or/and serotonin in brain tissues, thereby improving the symptoms of the psychataxia such as decreased focus.

Abstract: A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

Abstract: In some embodiments, the present disclosure relates to a modulator device that includes an input terminal configured to receive impingent light. A first waveguide has a first output region and a first input region that is coupled to the input terminal. A second waveguide is optically coupled to the first waveguide and has second input region and a second output region that is coupled to the input terminal. An output terminal coupled to the first output region of the first waveguide and the second output region of the second waveguide is configured to provide outgoing light that is modulated. A heater structure is configured to provide heat to the first waveguide to induce a temperature difference between the first and second waveguides. A gas-filled isolation structure is proximate to the heater structure and is configured to thermally isolate the second waveguide from the heat provided to the first waveguide.

Abstract: A display device includes a substrate, gate lines, a driving circuit, and auxiliary gate lines. The substrate has a display area. The gate lines are disposed on the display area, and are in parallel with a first edge of the display area. The gate lines include a first gate line which is farthest from the first edge. The driving circuit is disposed adjacent to the first edge. The auxiliary gate lines substantially perpendicular to the gate lines are connected to the gate lines, and are in parallel with a second edge of the display area. The auxiliary gate lines include a first auxiliary gate line and at least one auxiliary gate line. The first auxiliary gate line is configured to connect the first gate line to the driving circuit. The at least one auxiliary gate line is disposed between the second edge and the first auxiliary gate line.

Abstract: Structures and methods including a waveguide having a cladding layer surrounding a core layer disposed over a substrate, a cavity extending into the substrate adjacent the waveguide, a fiber disposed in the cavity, and an isolation space extending into the substrate and disposed under the waveguide. A plurality of holes may extend through the cladding layer adjacent the core layer.

Abstract: Various embodiments of the present disclosure are directed towards a modulator device including a first waveguide and a heater structure. An input terminal is configured to receive impingent light. The first waveguide has a first output region and a first input region coupled to the input terminal. A second waveguide is optically coupled to the first waveguide. The second waveguide has a second output region and a second input region coupled to the input terminal. An output terminal is configured to provide outgoing light that is modulated based on the impingent light. The output terminal is coupled to the first output region and the second output region. The heater structure overlies the first waveguide. A bottom surface of the heater structure is aligned with a bottom surface of the first waveguide. The first waveguide is spaced laterally between sidewalls of the heater structure.

Abstract: The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a diaphragm, a backplate, and a sidewall stopper. The diaphragm has a venting hole disposed therethrough. The backplate is disposed over and spaced apart from the diaphragm. The sidewall stopper is disposed along a sidewall of the diaphragm exposing to the venting hole. Thus, the sidewall stopper is not limited by a distance between the movable part and the stable part of the microphone. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.

Abstract: An anti-collision control method and a rail vehicle control system are provided. The rail vehicle control system includes a control apparatus configured to implement the anti-collision control method to prevent a plurality of vehicles on a plurality of rails from colliding with each other. The anti-collision control method includes receiving a transfer requirement data to decide which one of the vehicles and which one of the rails are respectively an assigned vehicle and an assigned rail; planning a movement path and a movement space according to the transfer requirement data and a vehicle dimension data; determining whether any portion of the movement space is reserved; and in response to the movement space being reserved, the assigned vehicle is controlled to not move, or the movement space is reserved and the assigned vehicle is controlled to move according to the movement path along the assigned rail.

Abstract: A display device includes a substrate, gate lines, a driving circuit, and auxiliary gate lines. The substrate has a display area. The gate lines are disposed on the display area, and are in parallel with a first edge of the display area. The gate lines include a first gate line which is farthest from the first edge. The driving circuit is disposed adjacent to the first edge. The auxiliary gate lines substantially perpendicular to the gate lines are connected to the gate lines, and are in parallel with a second edge of the display area. The auxiliary gate lines include a first auxiliary gate line and at least one auxiliary gate line. The first auxiliary gate line is configured to connect the first gate line to the driving circuit. The at least one auxiliary gate line is disposed between the second edge and the first auxiliary gate line.

Abstract: In some embodiments, the present disclosure relates to a modulator device that includes an input terminal configured to receive impingent light. A first waveguide has a first output region and a first input region that is coupled to the input terminal. A second waveguide is optically coupled to the first waveguide and has second input region and a second output region that is coupled to the input terminal. An output terminal coupled to the first output region of the first waveguide and the second output region of the second waveguide is configured to provide outgoing light that is modulated. A heater structure is configured to provide heat to the first waveguide to induce a temperature difference between the first and second waveguides. A gas-filled isolation structure is proximate to the heater structure and is configured to thermally isolate the second waveguide from the heat provided to the first waveguide.

Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Abstract: A method includes forming a recess in a first substrate, bonding a micro-electro-mechanical systems (MEMS) substrate to the first substrate after forming the recess in the first substrate, forming an anti-stiction layer over the micro-electro-mechanical systems (MEMS) substrate, pattering the anti-stiction layer, etching the MEMS substrate to form a MEMS device, and bonding the MEMS device and the first substrate to a second substrate. The patterned anti-stiction layer is between the MEMS device and the second substrate.

Abstract: A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

Abstract: The present invention provides a Bifidobacterium lactis having active substances, a composition comprising the same, and a method of promoting longevity using the same by subjecting the composition to a subject, thereby increasing Cisd2 gene expression, reducing damage of mitochondria, delaying aging-related symptoms including nerve degeneration and sarcopenia, and so on.