Abstract: A transmission system includes a first optical communicating device, and second optical communicating devices, the first optical communicating device transmits, to the second optical communicating devices, a first frame and an instruction whether to transmit the first frame to a radio communicating device corresponding to each of the second optical communicating devices, each of the second optical communicating devices receives the first frame and the instruction from the first optical communicating device, control, based on the instruction, whether to transmit the received first frame to the radio communicating device, and the first optical communicating device is configured to, based on a request from the radio communicating device, generates the instruction such that the first frame is to be transmitted to a mobile terminal device through two or more radio communicating devices.

Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.

Abstract: Provided is a silver reflector capable of maintaining a high reflectivity achieved by using silver even under a hot and humid environment, wherein a film stress can be suppressed and a face deformation of an optical surface can be reduced, and a manufacture method therefor. A film stress after a reflection film is formed is within a range of +100 MPa to ?100 MPa, and a film stress after the reflection film is subjected to a hot and dry environment at 110° C. for 24 hours and a film stress after the reflection film subjected to the environment is subjected to a hot and humid environment at 85° C. and 85% RH for 24 hours are within a range of +100 MPa to ?100 MPa, and also an absolute value of a change amount between the former and latter film stress values is 40 MPa or lower.

Abstract: Provided is a method for producing fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride ((CF3)2CHCOF), which are useful as dry etching gases etc., safely and inexpensively with high purity. According to the method in which 1,1,3,3,3-pentafluoro-2-trifluoromethylpropyl methyl ether is pyrolyzed in a gas phase in the presence of a catalyst, the desired fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride can be obtained with high selectivity and high conversion of the starting material by a simple process in which a pyrolysis reaction is performed in a gas phase using the inexpensive starting material.

Abstract: An object of the present invention is to extend the catalyst lifetime in a method for producing fluoromethane by pyrolyzing fluorine-containing methyl ether in the presence of a catalyst. The present invention provides a method for producing fluoromethane by pyrolyzing a fluorine-containing methyl ether represented by Formula (1) in a gas phase in the presence of a catalyst, the pyrolysis being conducted at a moisture concentration of 100 ppm or less, wherein R1 and R2 are identical or different, and each represents a substituted or unsubstituted straight or branched monovalent aliphatic hydrocarbon group, substituted or unsubstituted monovalent aromatic hydrocarbon group, substituted or unsubstituted monovalent cyclic aliphatic hydrocarbon group, hydrogen atom, or halogen atom.

Abstract: An object of the present invention is to provide a composition containing fluoromethane having high purity. A method for producing fluoromethane, comprising: pyrolyzing in a gas phase a fluorine-containing methyl ether represented by Formula (1): wherein R1 and R2 are the same or different, and each represents an optionally substituted linear or branched monovalent aliphatic hydrocarbon group, an optionally substituted monovalent aromatic hydrocarbon group, an optionally substituted monovalent cyclic aliphatic hydrocarbon group, hydrogen, or halogen, in the presence of an alumina catalyst to thereby obtain a mixed gas containing fluoromethane and acid fluoride, wherein: the alumina catalyst contains chlorine in an amount of 1.0 wt % or less.

Abstract: An object of the present invention is to provide a method for producing methane fluoride that is useful, for example, as a dry etching gas, the method being more suitable for industrial production. To achieve this object, the present invention provides a method including reacting (A) dimethyl sulfate and (B) at least one fluorocompound in a liquid phase, the fluorocompound (B) being at least one compound selected from the group consisting of hydrogen fluoride and hydrofluoric acid salts, or a metal fluoride, wherein when the fluoride compound (B) includes hydrogen fluoride or a hydrofluoric acid salt, the reaction is carried out without a solvent or using a polar solvent as a solvent, and when the fluoride compound (B) is a metal fluoride, the reaction is carried out using water as a solvent.

Abstract: An object is to provide a machine-tool spindle cooling method and a machine tool capable of suppressing thermal deformation of a spindle while achieving energy saving. To achieve it, a machine-tool spindle cooling method is provided in which bearings (13) and a spindle rotation motor (14) that generate heat with rotation of a spindle (12) are cooled by causing a spindle cooling device (18) to supply and circulate cooled cooling oil inside a housing (11) rotatably supporting the spindle (12), the method comprising deactuating the spindle cooling device (18) to thereby stop supplying the cooling oil in a case where the number of revolutions of the spindle (12) is less than or equal to a predetermined number of revolutions and the temperatures of the bearings (13) and the spindle rotation motor (14) detected by temperature sensors (15, 16) are less than or equal to a predetermined temperature.

Abstract: A method for producing methyl fluoride, comprising the steps of: (1) pyrolyzing a starting compound in a gas phase to thereby obtain a mixed gas containing methyl fluoride and acid fluoride; and (2) rectifying the mixed gas obtained in step (1) to thereby obtain methyl fluoride.

Abstract: An object of the present invention is to extend the catalyst lifetime in a method for producing fluoromethane by pyrolyzing fluorine-containing methyl ether in the presence of a catalyst. The present invention provides a method for producing fluoromethane by pyrolyzing a fluorine-containing methyl ether represented by Formula (1) in a gas phase in the presence of a catalyst, the pyrolysis being conducted at a moisture concentration of 100 ppm or less, wherein R1 and R2 are identical or different, and each represents a substituted or unsubstituted straight or branched monovalent aliphatic hydrocarbon group, substituted or unsubstituted monovalent aromatic hydrocarbon group, substituted or unsubstituted monovalent cyclic aliphatic hydrocarbon group, hydrogen atom, or halogen atom.

Abstract: A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.

Abstract: A coaxial connector is manufactured to have a structure in which a first resin member is not easily separated from an external terminal. A coaxial connector according to the present disclosure includes a first resin member, a second resin member attached to the first resin member, a fixed terminal and a movable terminal disposed between the first resin member and the second resin member, and an external terminal attached to outer peripheries of the first resin member and the second resin member. The external terminal includes a cylindrical accommodating portion that accommodates the first resin member, and the first resin member includes a resin engagement portion. The resin engagement portion is engaged with the accommodating portion, so that separation of the first resin member is prevented.

Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.

Abstract: A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.

Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.

Abstract: A coaxial connector plug includes a first outer conductor with a cylinder shape extending in a first direction, a first center conductor that has a cylinder shape extending in the first direction and is provided inside the first outer conductor, and an insulation member that fixes the first center conductor to the first outer conductor. In the coaxial connector plug, a communication section to cause the inside and the outside of the first center conductor to communicate with each other is provided in an end portion of the first center conductor on one side in the first direction. A width of the communication section in a second direction orthogonal to the first direction becomes larger as it progresses from the one side toward the other side of the first direction, and the insulation member penetrates from the outside to the inside of the first center conductor through the communication section.

Abstract: An etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.

Abstract: An object of the present invention is to provide a method for producing methane fluoride that is useful, for example, as a dry etching gas, the method being more suitable for industrial production. To achieve this object, the present invention provides a method including reacting (A) dimethyl sulfate and (B) at least one fluorocompound in a liquid phase, the fluorocompound (B) being at least one compound selected from the group consisting of hydrogen fluoride and hydrofluoric acid salts, or a metal fluoride, wherein when the fluoride compound (B) includes hydrogen fluoride or a hydrofluoric acid salt, the reaction is carried out without a solvent or using a polar solvent as a solvent, and when the fluoride compound (B) is a metal fluoride, the reaction is carried out using water as a solvent.

Abstract: A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickn

Abstract: A semiconductor package includes a support substrate arranged with a first aperture reaching a semiconductor device on a rear side, the semiconductor device is bonded via an adhesive to a surface of the support substrate, an insulating layer covering the semiconductor device, and wiring for connecting the semiconductor device and an external terminal through the insulating layer. The adhesive may form a part of the first aperture. In addition, a heat dissipation part may be arranged in the first aperture and a metal material may be filled in the first aperture.