Abstract: A contactless electric power supply device configured to widen a range in which power supply is possible to a moving body in a connection direction by supplying electric power from a supply coil to the moving body provided with the receiving coil in a contactless manner and connecting power supply modules provided with the supply coil, wherein, when at least one of the receiving coils is positioned to be able to receiver power from at least one of the supply coils, the contactless electric power supply device performs communication from the power supply module to an alternating module that supplies alternating current and performs communication from the alternating module to the power supply module, and causes a semiconductor switch provided on the power supply module to conduct electricity.

Abstract: Provided is a three-dimensional shaped article with relatively high strength and relatively high accuracy. A sintering and shaping method includes: a shaping layer forming process of forming a shaping layer by using a sintering and shaping material in which inorganic particles are included; a process of applying a liquid binding agent, in which a thermoplastic resin and inorganic particles are included, to a desired region of the shaping layer; a process of curing the liquid binding agent, which is applied, to form a shaping cross-sectional layer (shaping portion); a process of removing a region (non-shaping portion) of the shaping layer to which the liquid binding agent is not applied; and a process of heating the shaping cross-sectional layer that is laminated for a sintering treatment.

Abstract: Hydrogen annealing for heating a semiconductor wafer on which a thin film containing a dopant is deposited to an annealing temperature under an atmosphere containing hydrogen is performed. A native oxide film is inevitably formed between the thin film containing the dopant and the semiconductor wafer, however, by performing hydrogen annealing, the dopant atoms diffuse relatively easily in the native oxide film and accumulate at the interface between the front surface of the semiconductor wafer and the native oxide film. Subsequently, the semiconductor wafer is preheated to a preheating temperature under a nitrogen atmosphere, and then, flash heating treatment in which the front surface of the semiconductor wafer is heated to a peak temperature for less than one second is performed. The dopant atoms are diffused and activated in a shallow manner from the front surface of the semiconductor wafer, thus, the low-resistance and extremely shallow junction is obtained.

Abstract: According to an illustrative embodiment an information processing device is provided. The device includes a processor for controlling acquisition of first information which indicates a service not registered in an integrated circuit of the device and a service registered in the integrated circuit of the device, the first information being acquired from within the device, controlling acquisition of second information which indicates a service registered in the integrated circuit of the device, and controlling display based on the first information and second information.

Abstract: A method for defibrating a fiber body includes: a supply step of supplying a liquid to a fiber body containing fibers; and a defibrating step of defibrating the fiber body to which the liquid is supplied, and in the supply step, the liquid is supplied to the fiber body so that a rate in tensile strength of the fiber body immediately before defibrated in the defibrating step to the fiber body before the liquid is supplied thereto is 60.0% or less.

Abstract: A waste paper recycling apparatus includes a liquid ejection device which receives a first liquid and a second liquid different from the first liquid; a receiving portion receiving a selection operation which selects one of the first liquid and the second liquid which is adhered to a predetermined region of a sheet containing fibers formed from waste paper; and a control portion which controls the liquid ejection device to adhere the liquid selected by the selection operation to the predetermined region. In the waste paper recycling apparatus, the first liquid contains a binder which binds fibers together, and the second liquid contains a pigment and a binder which binds fibers together.

Abstract: A fiber body forming method includes a step of preparing a web which contains fibers and which has a bulk density of 0.09 g/cm3 or more; and a step of applying a liquid containing a binder which binds the fibers together to the web.

Abstract: A fiber body forming method includes a step of applying a liquid to a web containing fibers, the liquid contains resin particles which bind the fibers, and the liquid has a surface tension of 50 mN/m or less at 20° C.

Abstract: Glass flakes according to the present invention include: glass flake substrates; and a coating covering at least a portion of a surface of each of the glass flake substrates and composed of a binder. The binder includes an epoxy-modified polyolefin resin and a silane coupling agent. The proportion of the coating in the glass flakes is 0.05 to 3 mass %.

Abstract: Glass flakes according to the present invention include: glass flake substrates; and a coating covering at least a portion of a surface of each of the glass flake substrates and composed of a binder. The binder includes a bismaleimide compound, a resin, and a silane coupling agent as essential components and includes a peroxide as an optional component. The proportion of the peroxide in the binder is 8 mass % or less.

Abstract: A heat treatment apparatus is provided with two cool chambers, that is, a first cool chamber and a second cool chamber. A semiconductor wafer before treatment is alternately carried into the first cool chamber or the second cool chamber and then transported to a heat treatment part by a transport robot after a nitrogen purge is performed. The semiconductor wafer after being heat-treated in the heat treatment part is alternately transported to the first cool chamber or the second cool chamber to be cooled. A sufficient cooling time is secured for the independent semiconductor wafer, and a reduction in throughput as the whole heat treatment apparatus can be suppressed.

Abstract: A gallium nitride (GaN) substrate is injected with magnesium as a p-type dopant. The GaN substrate undergoes preheating through irradiation with light from halogen lamps in an atmosphere containing nitrogen and hydrogen, and further undergoes heating to a high temperature for a super-short time through irradiation with flashes of light from flash lamps. Heating the GaN substrate in the atmosphere containing nitrogen and hydrogen complements removed nitrogen, thus preventing nitrogen shortage. Such a heating process also enables heat treatment while supplying hydrogen to the GaN substrate. The heating process further enables crystal defects in the GaN substrate to be recovered. With these effects, the p-type dopant injected into the GaN substrate is activated with high efficiency.

Abstract: Glass flakes of the present invention have an average particle diameter of 0.1 to 15 ?m and an average thickness of 0.1 to 2 ?m. The glass flakes have a particle size distribution in which the particle diameter at 99% of the cumulative volume from the smaller particle diameter is 45 ?m or less, and the maximum particle diameter of the glass flakes is 62 ?m or less.

Abstract: The glass flakes of the present invention include first glass flake substrates and second glass flake substrates and satisfy at least either of the following conditions (A) and (B): (A) an average thickness of the first glass flake substrates is 0.05 to 2 ?m, an average thickness of the second glass flake substrates is 2 to 20 ?m, and the average thickness of the second glass flake substrates is 3 or more times greater than the average thickness of the first glass flake substrates; and (B) a thickness D1 representing a modal value of a thickness distribution (on a number basis) of the first glass flake substrate is 0.03 to 2.5 ?m, a thickness D2 representing a modal value of a thickness distribution (on a number basis) of the second glass flake substrates is 1.5 to 25 ?m, and the thickness D2 is 2 or more times greater than the thickness D1.

Abstract: Glass flakes of the present invention include glass flake substrates and a coating covering at least a portion of the surface of each of the glass flake substrates and composed of a binder. The binder includes a silane coupling agent, an epoxy resin, and a carbodiimide compound as essential components and includes, as an optional component, a crosslinking agent other than a carbodiimide compound. The total amount of the carbodiimide compound and the crosslinking agent is 20 mass % or less with respect to the total mass of the binder.

Abstract: A sheet is configured to have a first complex having a fiber and a fiber aggregation inhibitor integrally, a second complex having a fiber and a fiber aggregation inhibitor integrally, and a binding material which combines the first complex and the second complex and contains a resin.

Abstract: A slide bearing in the present invention is formed in a cylindrical shape and has an inner peripheral surface sliding along an axis, the slide bearing includes: a first groove in which the extension direction is a direction having a component in a circumferential direction on the inner peripheral surface; and at least two second grooves that are branched from the first groove and in which the extension directions are directions each having a component in an axial direction at least within a predetermined range from the first groove. Within a predetermined range from an end opposite to the first groove of the second groove, the width or the depth gradually decreases toward the end.

Abstract: A non-contact feed connection unit of the embodiment includes: a power supply-side inductor having a power supply-side core and a power supply-side coil wound around the power supply-side core; a power receiving-side inductor having a power receiving-side core and a power receiving-side coil wound around the power receiving-side core; a power supply-side bracket section made of non-ferromagnetic metal material covering at least a portion of the outer surface of the power supply-side core; a power receiving-side bracket section made of non-ferromagnetic metal material covering at least a portion of the outer surface of the power receiving-side core; and a gap-covering section, formed integrally with the power supply-side bracket section or the power receiving-side bracket section using non-ferromagnetic metal material, covering an outer portion of a magnetic gap that is part of a magnetic loop formed by the power supply-side core and the power receiving-side core.

Abstract: In order to prevent a replacement of the needle plate in the situation not suitable for replacing the needle plate, a needle plate detachable mechanism has a needle plate fixing unit for fixing a needle plate on a sewing machine body; a releasing unit for releasing a fixed state of the needle plate; and a fixing-release limiting unit for limiting a release of the fixed state of the needle plate when the needle is positioned below an upper surface of the needle plate or when the sewing machine motor is driven.