Abstract: Glass flakes according to the present invention include: glass flake substrates; and a coating covering at least a portion of a surface of each of the glass flake substrates and composed of a binder. The binder includes an epoxy-modified polyolefin resin and a silane coupling agent. The proportion of the coating in the glass flakes is 0.05 to 3 mass %.

Abstract: Glass flakes according to the present invention include: glass flake substrates; and a coating covering at least a portion of a surface of each of the glass flake substrates and composed of a binder. The binder includes a bismaleimide compound, a resin, and a silane coupling agent as essential components and includes a peroxide as an optional component. The proportion of the peroxide in the binder is 8 mass % or less.

Abstract: A heat treatment apparatus is provided with two cool chambers, that is, a first cool chamber and a second cool chamber. A semiconductor wafer before treatment is alternately carried into the first cool chamber or the second cool chamber and then transported to a heat treatment part by a transport robot after a nitrogen purge is performed. The semiconductor wafer after being heat-treated in the heat treatment part is alternately transported to the first cool chamber or the second cool chamber to be cooled. A sufficient cooling time is secured for the independent semiconductor wafer, and a reduction in throughput as the whole heat treatment apparatus can be suppressed.

Abstract: A gallium nitride (GaN) substrate is injected with magnesium as a p-type dopant. The GaN substrate undergoes preheating through irradiation with light from halogen lamps in an atmosphere containing nitrogen and hydrogen, and further undergoes heating to a high temperature for a super-short time through irradiation with flashes of light from flash lamps. Heating the GaN substrate in the atmosphere containing nitrogen and hydrogen complements removed nitrogen, thus preventing nitrogen shortage. Such a heating process also enables heat treatment while supplying hydrogen to the GaN substrate. The heating process further enables crystal defects in the GaN substrate to be recovered. With these effects, the p-type dopant injected into the GaN substrate is activated with high efficiency.

Abstract: Glass flakes of the present invention have an average particle diameter of 0.1 to 15 ?m and an average thickness of 0.1 to 2 ?m. The glass flakes have a particle size distribution in which the particle diameter at 99% of the cumulative volume from the smaller particle diameter is 45 ?m or less, and the maximum particle diameter of the glass flakes is 62 ?m or less.

Abstract: The glass flakes of the present invention include first glass flake substrates and second glass flake substrates and satisfy at least either of the following conditions (A) and (B): (A) an average thickness of the first glass flake substrates is 0.05 to 2 ?m, an average thickness of the second glass flake substrates is 2 to 20 ?m, and the average thickness of the second glass flake substrates is 3 or more times greater than the average thickness of the first glass flake substrates; and (B) a thickness D1 representing a modal value of a thickness distribution (on a number basis) of the first glass flake substrate is 0.03 to 2.5 ?m, a thickness D2 representing a modal value of a thickness distribution (on a number basis) of the second glass flake substrates is 1.5 to 25 ?m, and the thickness D2 is 2 or more times greater than the thickness D1.

Abstract: Glass flakes of the present invention include glass flake substrates and a coating covering at least a portion of the surface of each of the glass flake substrates and composed of a binder. The binder includes a silane coupling agent, an epoxy resin, and a carbodiimide compound as essential components and includes, as an optional component, a crosslinking agent other than a carbodiimide compound. The total amount of the carbodiimide compound and the crosslinking agent is 20 mass % or less with respect to the total mass of the binder.

Abstract: A sheet is configured to have a first complex having a fiber and a fiber aggregation inhibitor integrally, a second complex having a fiber and a fiber aggregation inhibitor integrally, and a binding material which combines the first complex and the second complex and contains a resin.

Abstract: A slide bearing in the present invention is formed in a cylindrical shape and has an inner peripheral surface sliding along an axis, the slide bearing includes: a first groove in which the extension direction is a direction having a component in a circumferential direction on the inner peripheral surface; and at least two second grooves that are branched from the first groove and in which the extension directions are directions each having a component in an axial direction at least within a predetermined range from the first groove. Within a predetermined range from an end opposite to the first groove of the second groove, the width or the depth gradually decreases toward the end.

Abstract: A non-contact feed connection unit of the embodiment includes: a power supply-side inductor having a power supply-side core and a power supply-side coil wound around the power supply-side core; a power receiving-side inductor having a power receiving-side core and a power receiving-side coil wound around the power receiving-side core; a power supply-side bracket section made of non-ferromagnetic metal material covering at least a portion of the outer surface of the power supply-side core; a power receiving-side bracket section made of non-ferromagnetic metal material covering at least a portion of the outer surface of the power receiving-side core; and a gap-covering section, formed integrally with the power supply-side bracket section or the power receiving-side bracket section using non-ferromagnetic metal material, covering an outer portion of a magnetic gap that is part of a magnetic loop formed by the power supply-side core and the power receiving-side core.

Abstract: An object of the present invention is to provide a chromatographic medium having sufficiently improved storage stability. The present invention relates to a chromatographic medium having a detection part in which a detection substance composed of a protein is fixed, wherein the detection part includes a tri- or higher polysaccharide and a basic amino acid.

Abstract: In order to prevent a replacement of the needle plate in the situation not suitable for replacing the needle plate, a needle plate detachable mechanism has a needle plate fixing unit for fixing a needle plate on a sewing machine body; a releasing unit for releasing a fixed state of the needle plate; and a fixing-release limiting unit for limiting a release of the fixed state of the needle plate when the needle is positioned below an upper surface of the needle plate or when the sewing machine motor is driven.

Abstract: There is provided a communication terminal including a transmission controller configured to allow transmission of, to a verification target device, authentication information for authenticating the verification target device based on first information acquired from an information processing device, and a verification unit configured to verify validity of the verification target device based on a response to the authentication information and second information acquired from the information processing device, the second information being associated with the first information.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: Contactless power supply device of the present invention includes: contactless power supply section that supplies AC power in a contactless manner; contactless power receiving section that receives the AC power in a contactless manner; first DC transformer circuit that transforms, to DC load voltage, DC reception-power voltage obtained from the contactless power receiving section and supplies the DC load voltage to first electric load, and that has a reverse transfer function of transferring regenerative power generated by the first electric load in a reverse direction; and second DC transformer circuit that transforms the DC reception-power voltage to DC load voltage and supplies the DC load voltage to second electric load. Accordingly, the generated regenerative power is allocated and made available to the other electric load, and a power storage section is not necessary, which suppresses an increase in the weight and size of the power-receiving-side device.

Abstract: Hydrogen annealing for heating a semiconductor wafer on which a thin film containing a dopant is deposited to an annealing temperature under an atmosphere containing hydrogen is performed. A native oxide film is inevitably formed between the thin film containing the dopant and the semiconductor wafer, however, by performing hydrogen annealing, the dopant atoms diffuse relatively easily in the native oxide film and accumulate at the interface between the front surface of the semiconductor wafer and the native oxide film. Subsequently, the semiconductor wafer is preheated to a preheating temperature under a nitrogen atmosphere, and then, flash heating treatment in which the front surface of the semiconductor wafer is heated to a peak temperature for less than one second is performed. The dopant atoms are diffused and activated in a shallow manner from the front surface of the semiconductor wafer, thus, the low-resistance and extremely shallow junction is obtained.

Abstract: Provided is technology enabling reliably erasing information on recovered paper, and whitening (reducing blackening) of the sheet. A sheet processing device has an image inspector configured to determine from a sheet printed with image information at least one of a background color of the sheet, and position, size, and color of the image information on the sheet; an image analyzer configured to determine, based on the evaluation result from the image inspector, a type of ink masking agent and an amount of ink masking agent; an ink masking agent applicator configured to apply to the image information printed on the sheet an ink masking agent of the specific type and specific amount determined by the image analyzer; and a shredder configured to comminute the sheet to which the ink masking agent was applied by the ink masking agent applicator.