Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A fluorosilicone reaction product of a vinyl functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a vinyl functional organopolysiloxane.

Abstract: Disclosed is a fluorine-containing composition which contains a fluorine-containing polymer that has repeating units respectively derived from (A) a fluorine-containing monomer that is an alpha-chloroacrylate having a fluoroalkyl group, (B) a monomer that has a linear or branched hydrocarbon group but does not have a fluoroalkyl group, and (C) a monomer that has a cyclic hydrocarbon group but does not have a fluoroalkyl group. This fluorine-containing composition is capable of providing a base such as a fiber product with excellent water repellency, especially strong water repellency.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A fluorosilicone reaction product of a mercapto or vinyl functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a mercapto or vinyl functional organopolysiloxane.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A fluorosilicone reaction product of a mercapto functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a mercapto functional organopolysiloxane.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A fluoropolymer comprising: (A) repeating unit derived from an S-sulfate monomer having an —S—SO3— group and carbon to carbon double bond; and (B) repeating unit derived from a fluoromonomer having a fluorine atom and carbon to carbon double bond. This fluoropolymer can be a constituent of water/oil repellent agent having excellent water/oil repelling capability, and is stable in air and permits an arbitrary control of crosslinking.

Abstract: Disclosed is a composition containing a fluorine-containing urethane compound (A) and a fluorine-containing polymer (B) having a repeating unit derived from a fluorine-containing monomer represented by the following formula (I): CH2?C(—X)—C(?O)-A-Rf??(I) (wherein X represents a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a CFX1X2 group (wherein X1 and X2 respectively represent a hydrogen atom, a fluorine atom or a chlorine atom), a cyano group, a straight or branched chain fluoroalkyl group having 1-20 carbon atoms, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted phenyl group; A represents a divalent group; and Rf represents a straight or branched chain perfluoroalkyl group having 1-6 carbon atoms).

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m—Z—]p—(CH2)n—Rf??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A surface treatment agent, which can impart the excellent water- and oil-repellency, soil resistance and feeling to the substrate, is obtained from a fluorine-containing polymer which contains: (A) a monomer which comprises; (A1) a fluorine-containing monomer of the formula: CH2?C(—X)—C(?O)—Y—Z—Rf wherein X is a hydrogen atom, a monovalent organic group, or a halogen atom, Y is —O— or —NH—, Z is a direct bond or a divalent organic group, and Rf is a fluoroalkyl group having 1 to 20 carbon atoms, and (A2) a (meth)acrylate monomer having a cyclic hydrocarbon group, and (B) at least one functional organopolysiloxane selected from the group consisting of a mercapto-functional organopolysiloxane, a vinyl-functional organopolysiloxane, a (meth)acrylamide-functional organopolysiloxane and a (meth)acrylate-functional group.

Abstract: The present invention provides a surface treatment agent comprising a fluorine-containing polymer having repeating units derived from a monomer comprising a fluorine-containing monomer, wherein the fluorine-containing polymer has a silicone moiety possessed by a mercapto group-containing silicone. When a porous substrate is treated under drying at normal temperature, the surface treatment agent comprising the fluorine-containing acrylate polymer can impart the excellent water- and oil-repellency and soil resistance to the porous substrate.

Abstract: A greaseproof paper is provided for use in food processing and/or packaging of foods in which paper has been rendered oleophobic by treatment with a fluorine-containing polymer. The fluorine-containing polymer may be prepared by polymerizing a fluorine-containing monomer in the presence of a mercapto group-containing organopolysiloxane. The fluorine-containing polymer may be applied to paper by coating onto pre-formed paper, or by applying the polymer as a size during a papermaking process.

Abstract: A fluorosilicone reaction product of a mercapto functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a mercapto functional organopolysiloxane.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.