Abstract: A fluorosilicone reaction product of a mercapto functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a mercapto functional organopolysiloxane.

Abstract: A fluorosilicone reaction product of a mercapto or vinyl functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a mercapto or vinyl functional organopolysiloxane.

Abstract: Fluorine-containing urethanes represented by the general formula: [Rf-A1-Z—X1—OC(?O)NH—]mI[—NHC(?O)O—Y1]n[—NHC(?O)O—(ClCH2—)X2O)a—R1]k ??(1) wherein I is a group derived from a polyisocyanate by removal of the isocyanato groups; Rf is perfluoroalkyl of 1 to 21 carbon atoms; A1 is a direct bond or an organic group of 1 to 21 carbon atoms; Z —SO2—; X1 is a divalent, straight-chain or branched, C1-5 aliphatic group which may have at least one hydroxyl group; X2 is a trivalent, straight-chain or branched, C2-5 aliphatic group; Y1 is a monovalent organic group which is optionally hydroxylated; and R1 is hydrogen or alkyl of 1 to 10 carbon atoms.

Abstract: A fluorosilicone reaction product of a vinyl functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a vinyl functional organopolysiloxane.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A greaseproof paper is provided for use in food processing and/or packaging of foods in which paper has been rendered oleophobic by treatment with a fluorine-containing polymer. The fluorine-containing polymer may be prepared by polymerizing a fluorine-containing monomer in the presence of a mercapto group-containing organopolysiloxane. The fluorine-containing polymer may be applied to paper by coating onto pre-formed paper, or by applying the polymer as a size during a papermaking process.

Abstract: Disclosed is a surface treating agent containing fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing compound which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n-Rf??(I) (wherein X is a hydrogen atom or a methyl group), (B) a repeating unit derived from a monomer containing no fluorine atom, if necessary and (C) a repeating unit derived from a crosslinkable monomer, if necessary. This surface treating agent has excellent water repellency, oil repellency and antifouling property.

Abstract: A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

Abstract: A fluorosilicone reaction product of a mercapto functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2?C(X)COOYRf, and (B) a mercapto functional organopolysiloxane.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: A fluoropolymer comprising: (A) repeating unit derived from an S-sulfate monomer having an —S—SO3— group and carbon to carbon double bond; and (B) repeating unit derived from a fluoromonomer having a fluorine atom and carbon to carbon double bond. This fluoropolymer can be a constituent of water/oil repellent agent having excellent water/oil repelling capability, and is stable in air and permits an arbitrary control of crosslinking.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf ??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.

Abstract: Disclosed is a composition containing a fluorine-containing urethane compound (A) and a fluorine-containing polymer (B) having a repeating unit derived from a fluorine-containing monomer represented by the following formula (I): CH2?C(—X)—C(?O)-A-Rf ??(I) (wherein X represents a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a CFX1X2 group (wherein X1 and X2 respectively represent a hydrogen atom, a fluorine atom or a chlorine atom), a cyano group, a straight or branched chain fluoroalkyl group having 1-20 carbon atoms, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted phenyl group; A represents a divalent group; and Rf represents a straight or branched chain perfluoroalkyl group having 1-6 carbon atoms).

Abstract: Fluorine-containing urethanes represented by the general formula: [Rf-A1-Z-X1—OC(?O)NH—]mI[—NHC(?O)O—Y1]n[—NHC(?O)O—(ClCH2—)X2O)a—R1]k ??(1) wherein I is a group derived from a polyisocyanate by removal of the isocyanato groups; Rf is perfluoroalkyl of 1 to 21 carbon atoms; A1 is a direct bond or an organic group of 1 to 21 carbon atoms; Z is —S— or —SO2—; X1 is a divalent, straight-chain or branched, C1-5 aliphatic group which may have at least one hydroxyl group; X2 is a trivalent, straight-chain or branched, C2-5 aliphatic group; Y1 is a monovalent organic group which is optionally hydroxylated; and R1 is hydrogen or alkyl of 1 to 10 carbon atoms.

Abstract: Disclosed is a fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2?C(-X)-C(?O)-Y-[-(CH2)m-Z-]p-(CH2)n—Rf??(I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.

Abstract: Disclosed is a surface treating agent containing fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing compound which is represented by the following formula: CH2?C(—X)—C(?O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf??(I) ?(wherein X is a hydrogen atom or a methyl group), (B) a repeating unit derived from a monomer containing no fluorine atom, if necessary and (C) a repeating unit derived from a crosslinkable monomer, if necessary. This surface treating agent has excellent water repellency, oil repellency and antifouling property.

Abstract: A multi-storage nonvolatile memory of high density, high speed and high reliability has a memory transistor and switch transistors disposed on both the sides of the memory transistor. The memory transistor includes a gate insulating film having discrete traps and a memory gate electrode, whereas the switch transistors include switch gate electrodes. The gate insulating film has the discrete traps for storing information charge, can locally inject carriers, and one memory cell constitutes a multi-storage cell for storing at least information of 2 bits. The switch transistors having the switch gate electrodes realize source side injection. The memory transistor is fommed together with the switch transistors in self-aligned diffusion. The memory gate electrode of the memory transistor is connected to a word line so as to perform word-line erase.