Abstract: There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.

Abstract: A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a <110> direction.

Abstract: A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a <110> direction.

Abstract: A sliding member is produced by forming hardening layers with two-layered structure on surface of a substrate metal with a Vickers hardness of not more than Hv300, such as aluminum or magnesium alloy for example, and then forming a DLC film having surface roughness defined as maximum height roughness Rz of 1 to 10 ?m further on the hardening layers. The above-described hardening layers are composed of a first hardening layer dispersed with heavy metal particles, preferably made of tungsten and/or tantalum in the substrate metal, and a second hardening layer formed under the first hardening layer.

Abstract: It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method. Provided is a semiconductor wafer comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; and a second semiconductor layer that is formed to contact the first semiconductor layer, is a group 3-5 compound semiconductor layer that lattice matches or pseudo-lattice matches with InP, and can be selectively oxidized relative to the first semiconductor layer.

Abstract: A semiconductor device includes: a package case in which a semiconductor element is mounted, the package case having a bonding portion; a cap having a bonding portion bonded to the bonding portion of the package case so as to hermetically seal the semiconductor element; and one or more bonding/sealing wires disposed between and in contact with the bonding portion of the package case and the bonding portion of the cap such that the one or more bonding/sealing wires form a closed loop and hermetically seal the semiconductor element.

Abstract: A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y?0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.

Abstract: In a semiconductor device including a multi-gate MIS transistor having a channel on a plurality of surfaces, a gate electrode is formed on a gate insulating film on side surfaces of an island-like semiconductor layer formed along a given direction on an insulating film, and source/drain electrodes are formed in contact with the semiconductor layer. The semiconductor layer has a plurality of side surfaces along the given direction. All angles formed by adjacent side surfaces are larger than 90°. A section perpendicular to the given direction is vertically and horizontally symmetrical.

Abstract: A semiconductor device includes an n-channel MIS transistor and a p-channel MIS transistor on a semiconductor layer formed on an insulating layer, in which the channel of the n-channel MIS transistor is formed of a strained Si layer having biaxial tensile strain and the channel of the p-channel MIS transistor is formed of a strained SiGe layer having uniaxial compression strain in the channel length direction.

Abstract: A substrate used for fabricating devices thereon includes an insulating film, and a monocrystal Ge thin layer formed on the insulating film in contact therewith, the monocrystal Ge thin layer having a thickness not more than 6 nm. The monocrystal Ge thin layer has a thickness not less than 2 nm and a compressive strain.

Abstract: To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.

Abstract: A stem for an optical element includes a base-like portion located on a portion of a package side surface of an eyelet, higher than the package side surface. A block is located on a surface of the base-like portion of the eyelet. An optical element mounting surface of the block projects outward, overhanging a side face of the base-like portion, close to lead electrodes which are inserted through holes of the eyelet, respectively, and sealed with sealing glass. High-frequency line substrates are located on the optical element mounting surface of the block, and Au films of the high-frequency line substrate are electrically connected to respective lead electrodes.

Abstract: A semiconductor device includes: a package case in which a semiconductor element is mounted, the package case having a bonding portion; a cap having a bonding portion bonded to the bonding portion of the package case so as to hermetically seal the semiconductor element; and one or more bonding/sealing wires disposed between and in contact with the bonding portion of the package case and the bonding portion of the cap such that the one or more bonding/sealing wires form a closed loop and hermetically seal the semiconductor element.

Abstract: A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a <110> direction.

Abstract: To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.

Abstract: An optical component comprises an optical transmission element (e.g., an optical lens) whose circumferential wall partially joins a metal holder via a joining material (e.g., a low melting point glass), wherein stress is normally applied to the optical transmission element in a compression direction when joining the metal holder. The optical transmission element is inserted into a through hole of the metal holder, and the joining material is kept in a bank actualized by a tapered portion formed in proximity to one end of the through hole of the metal holder. This prevents tensile stress from being applied to the optical transmission element; thus, it is possible to avoid the occurrence of cracks and separations in the optical transmission element; and it is possible to avoid the occurrence of errors in optical characteristics, regardless of variations of the environmental temperature, so that, the optical component is improved in reliability.

Abstract: An optical signal emitted from a semiconductor laser is converged by a lens and then received by a single uniaxial birefringent crystal having a C axis that is inclined at an angle other than 90 degrees against a laser optical axis to output an optical signal having a polarized wave component of constant intensity corresponding to the wavelength of the optical signal regardless of temperature changes. The optical signal has an ordinary ray vibrating in a direction perpendicular to a plane including both the C axis and the laser optical axis, and an extraordinary ray vibrating in a direction perpendicular to both the ordinary ray and the laser optical axis. A first main photo detector detects the intensity of a p-polarized component of the optical signal that has passed through a polarizer and a second photo detector directly receives the optical signal converged by the lens.

Abstract: In a semiconductor device including a multi-gate MIS transistor having a channel on a plurality of surfaces, a gate electrode is formed on a gate insulating film on side surfaces of an island-like semiconductor layer formed along a given direction on an insulating film, and source/drain electrodes are formed in contact with the semiconductor layer. The semiconductor layer has a plurality of side surfaces along the given direction. All angles formed by adjacent side surfaces are larger than 90°. A section perpendicular to the given direction is vertically and horizontally symmetrical.

Abstract: A wavelength filter includes a solid material that is optically transparent and including a pair of planar surfaces substantially parallel to each other; and a supporting member that supports the solid material on a planar surface of the solid material other than the pair of planar surfaces, the supporting member having a rigidity higher than that of the solid material. The solid material is a birefringent material of which an optical axis makes a predetermined angle with respect to a normal to the pair of planar surfaces, and the wavelength filter selects light having a wavelength that is determined by an optical length between the pair of planar surfaces by resonating the light between the pair of planar surfaces.

Abstract: To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.