Abstract: A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.

Abstract: A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first insulating layer interposed therebetween, forming a second insulating layer on a side of the first semiconductor layer, epitaxially growing a second semiconductor layer in a region on the semiconductor substrate other than a region formed with the first insulating layer, forming a first semiconductor element in the first semiconductor layer on the first insulating layer, and forming a second semiconductor element in the second semiconductor layer on the second insulating layer.

Abstract: A method of manufacturing a semiconductor device, includes selectively forming a mask having an opening on a semiconductor substrate, ion-implanting oxygen to a predetermined depth position of the substrate from a surface of the substrate exposed in the opening of the mask, carrying out annealing with respect to the substrate to oxidize an ion implantation region so that an insulating layer is formed, and forming a first semiconductor element on a region of the semiconductor substrate on the insulating layer, and forming a second semiconductor element on a region other than the region formed with the insulating layer.

Abstract: An exposure apparatus is provided for performing exposure processes with high accuracy by accurately performing pressure control inside a chamber having a plurality of air-conditioning chambers. The inside of the main chamber which accommodates the exposure apparatus is divided into a plurality of air-conditioning chambers, and a pressure detection device which detects the pressure is provided with each of the plurality of air-conditioning chambers. Also, among the plurality of the air-conditioning chambers, the pressure inside a main column which accommodates an exposure stage on which a wafer in mounted and subjected to an exposure process, is set to be higher than the pressure of the other air-conditioning chambers based on detection results obtained from the pressure detection devices.

Abstract: A semiconductor device comprises a base substrate, a silicon oxide layer formed on the base substrate, a first semiconductor layer formed on the silicon oxide layer, the first semiconductor layer including an SiGe layer with a Ge concentration not less than 30 atomic %, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer including a Ge layer or an SiGe layer with a Ge concentration higher than the first semiconductor layer, a gate electrode configured to induce a channel in a surface region of the second semiconductor layer, and a gate insulating film formed between the second semiconductor layer and the gate electrode.

Abstract: Includes a stem with a hole, a dielectric sealed into the hole of the stem and including a pair of pin insertion holes, and a pair of high frequency signal pins that penetrate and fit into the pair of pin insertion holes of the dielectric, and constituting differential lines connected to an optical semiconductor element.

Abstract: A substrate used for fabricating devices thereon includes an insulating film, and a monocrystal Ge thin layer formed on the insulating film in contact therewith, the monocrystal Ge thin layer having a thickness not more than 6 nm. The monocrystal Ge thin layer has a thickness not less than 2 nm and a compressive strain.

Abstract: An optical component comprises an optical transmission element (e.g., an optical lens) whose circumferential wall partially joins a metal holder via a joining material (e.g., a low melting point glass), wherein stress is normally applied to the optical transmission element in a compression direction when joining the metal holder. The optical transmission element is inserted into a through hole of the metal holder, and the joining material is kept in a bank actualized by a tapered portion formed in proximity to one end of the through hole of the metal holder. This prevents tensile stress from being applied to the optical transmission element; thus, it is possible to avoid the occurrence of cracks and separations in the optical transmission element; and it is possible to avoid the occurrence of errors in optical characteristics, regardless of variations of the environmental temperature, so that, the optical component is improved in reliability.

Abstract: A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.

Abstract: A wavelength monitor comprises a cylindrical lens configured to allow a laser beam emitted from a semiconductor laser to pass therethrough, first and second photodetectors configured to receive the laser beam through the cylindrical lens, and a wavelength filter disposed in an optical path between the semiconductor laser and the first photodetector.

Abstract: A thermoelectric semiconductor has a P-type semiconductor and an N-type semiconductor disposed in parallel. A heat absorbing side of the thermoelectric semiconductor and a substrate that has an optical element mounted on its upper surface are disposed on the same plane. A heat radiation side of the thermoelectric semiconductor is disposed such that a direction from the heat absorbing side to the heat radiation side of the thermoelectric semiconductor is parallel with the upper surface of the substrate. Based on this arrangement, it is possible to set the environmental temperature of an optical module to the same level as the operation temperature of a laser diode.

Abstract: An optical signal emitted from a semiconductor laser (1) is converged by a lens (2) and is then received by a single uniaxial birefringent crystal (3). The uniaxial birefringent crystal (3) has a C axis that is inclined at an angle other than 90 degrees against a laser optical axis that is the direction in-which the optical signal is traveling so as to output an optical signal having a polarized wave component of constant intensity corresponding to the wavelength of the optical signal regardless of temperature changes thereof. The optical signal passing through the uniaxial birefringent crystal (3) has an ordinary ray vibrating in a direction perpendicular to a plane including both the C axis and the laser optical axis, and an extraordinary ray vibrating in a direction perpendicular to both the ordinary ray and the laser optical axis. A polarizer (4) receives this optical signal and allows a p-polarized component of the optical signal to pass therethrough.

Abstract: A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.

Abstract: A semiconductor device includes an insulating layer, a semiconductor board formed on a selected portion of the insulating layer, a semiconductor layer formed on at least one of the major side surfaces of the semiconductor board, which is different from the semiconductor board in lattice constant, and having source and drain regions and a channel region therebetween, the area of the channel region being larger than that of the bottom surface of the semiconductor board, which contacts the insulating layer, and a gate electrode formed on the channel region via a gate insulating layer.

Abstract: A wavelength filter is disposed between a laser diode and a photodiode that receives the rear-facet output light of the laser diode. Either a part on one side of an input or an output surface of the wavelength filter is bounded to a protrusion provided in a metal holder for holding the wavelength filter. As a result, a support structure is obtained that does not bring a damage on the wavelength filter caused by degradation of optical characteristics or temperature variation of the wavelength filter when support-fixing a wavelength filter having a complex refractive index crystal.

Abstract: A semiconductor device comprises a base substrate, an insulating film formed on the substrate, an undoped first and lattice-relaxed semiconductor layer formed on the insulating film, a second semiconductor layer having a tensile strain and formed on the first semiconductor layer, and a MISFET formed on the second semiconductor layer. Since the MISFET is formed in a strained Si layer, electrons are prevented from scattering in a channel region, improving the electron mobility. Furthermore, since the MISFET is formed in a thin SOI layer having a thickness of 100 nm or less, it is possible to reduce a parasitic capacitance in addition to the improvement of the electron mobility. As a result, the MISFET excellent in drivability can be obtained.

Abstract: In a conventional optical element module, a filter substrate mounting an air-core coil thereto is mounted in the vicinity of a light emitting element, and the light emitting element and the air-core coil are electrically connected to each other by a bonding wire, etc. Therefore, a problem exists in that it is difficult to set the length of a line path between the light emitting element and the air-core coil to about 1 mm or less, and no preferable high frequency characteristics are obtained.

Abstract: The inventive optical module has a feeder line for electrically connecting a semiconductor laser with an electric signal input/output unit of a package. The feeder line has a dielectric substrate and a conductor film formed on the dielectric substrate, which consists of a material having thermal conductivity smaller than that of aluminum oxide. Thus obtained is an optical module capable of inhibiting a semiconductor laser from wavelength change caused by heat flowing into the same in a high-density wavelength division multiplex optical transmission system multiplexing a plurality of signals in an optical wavelength region in high density and transmitting the same.