Abstract: There is provided a stick-shaped body advancing holder or a combination of a holder and an eraser adapted to advance a stick-shaped body and to ensure chucking of the body or the eraser without enlargement of the entire configuration. A stick-shaped body advancing holder has an outer barrel, an inner barrel, and urging members, the urging members each being of a sawtooth shape and having bent portions. The urging members are arranged in a gap between flat faces of the outer barrel and flat faces of the inner barrel. On a knocking operation, the bent portions are deformed, thereby generating an urging force.

Abstract: An eraser is constituted by an elastic material containing a rubber component or a resin component, and a skeleton structure for reinforcing the elastic material, and the skeleton structure is made from a porous structural material such as from an organic polymer that is broken when rubbed. Void portions in the porous structural material of the skeleton structure contain the elastic material of the eraser composition. Here, the skeleton portions of the skeleton structure may have an average thickness of 1 to 100 ?m, and the void portions may have an average pore size of 10 ?m to 3 mm. The eraser may have a surface hardness of 50 to 80, and also a sticking strength of 1.5 to 20 (kgf).

Abstract: The present invention provides a prophylactic/therapeutic agent for Alzheimer's disease comprising a substance that inhibits the action of ?-amyloid 1-40 to suppress vascular endothelial precursor cell differentiation and/or endothelial precursor differentiation from stem cells and/or a substance that promotes vascularization as an active ingredient. The present invention also provides a screening method for a substance that inhibits the action of ?-amyloid 1-40 to suppress vascular endothelial precursor cell differentiation and/or endothelial precursor differentiation from stem cells and/or a substance that promotes vascularization.

Abstract: An eraser is constituted by an elastic material containing a rubber component or a resin component, and a skeleton structure for reinforcing the elastic material, and the skeleton structure is made from a porous structural material such as from an organic polymer that is broken when rubbed. Void portions in the porous structural material of the skeleton structure contain the elastic material of the eraser composition. Here, the skeleton portions of the skeleton structure may have an average thickness of 1 to 100 ?m, and the void portions may have an average pore size of 10 ?m to 3 mm. The eraser may have a surface hardness of 50 to 80, and also a sticking strength of 1.5 to 20 (kgf).

Abstract: A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.

Abstract: In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, variations in composition profile of elements constituting the ferroelectric film are 50% or lower in the thickness direction of the ferroelectric film, and the polarization switching time of the ferroelectric film is 1 ?s or less.

Abstract: In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, the coercive voltage of the ferroelectric film is 1.5 V or less and the polarization switching time of the ferroelectric film is 200 ns or less.

Abstract: A method of making a ferroelectric thin film includes the step of forming a ferroelectric thin film with a randomly oriented layered structure on a surface of a conductor layer. At least the surface of the conductor layer has a spherical crystal structure.

Abstract: An eraser is constituted by an elastic material containing a rubber component or a resin component, and a skeleton structure for reinforcing the elastic material, and the skeleton structure is made from a porous structural material such as from an organic polymer that is broken when rubbed. Void portions in the porous structural material of the skeleton structure contain the elastic material of the eraser composition. Here, the skeleton portions of the skeleton structure may have an average thickness of 1 to 100 ?m, and the void portions may have an average pore size of 10 ?m to 3 mm. The eraser may have a surface hardness of 50 to 80, and also a sticking strength of 1.5 to 20 (kgf).

Abstract: In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are introduced into a chamber and main components of the multiple types of source gases are allowed to chemically react with one another with the chemical reaction proceeding depending on the reaction rate. Then, the ferroelectric film is deposited on the surface of the electrode.

Abstract: As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.

Abstract: The present invention provides use of embryonic stem cells or embryonic stem cell-derived embryoid bodies cultured on growth factor-reduced Matrigel™, for treating diseases caused by ischemia or arteriosclerosis.

Abstract: A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.

Abstract: In a method of manufacturing an electronic device, an electronic component and a mount substrate are disposed such that one of surfaces of the electronic component faces toward one of surfaces of the mount substrate, and a connection electrode of the electronic component is electrically connected and mechanically bond to a patterned conductor of the mount substrate. A resin film is then disposed on the electronic component and the mount substrate. A gas captured in between the resin film and the electronic component is sucked through a hole provided in the mount substrate from a side of the mount substrate opposite to the electronic component. The resin film is thereby deformed to closely contact the electronic component and the mount substrate. The resin film is then heated and adhered to the mount substrate.

Abstract: In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are introduced into a chamber and main components of the multiple types of source gases are allowed to chemically react with one another with the chemical reaction proceeding depending on the reaction rate. Then, the ferroelectric film is deposited on the surface of the electrode.

Abstract: A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.

Abstract: A capacitor insulating film is composed of a ferroelectric film formed on a substrate and containing an element functioning as a crystal nucleus which allows the growth of a crystal in a random crystal orientation.

Abstract: A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.

Abstract: A capacitive element comprises: a lower electrode formed above a semiconductor substrate; a capacitive insulating film formed of a ferroelectric on the lower electrode so as to have a thickness of 100 nm or less; and an upper electrode formed on the capacitive insulating element. In any cross section of the capacitive insulating film which is perpendicular to the semiconductor substrate, a sum of the widths of voids generated in the capacitive insulating film which are measured in a direction perpendicular to the thickness direction of the capacitive insulating film is 20% or less of a unit width.

Abstract: A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.