Patents by Inventor Shinji Baba
Shinji Baba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9837369Abstract: In a semiconductor device (SP1) according to an embodiment, a solder resist film (first insulating layer, SR1) which is in contact with the base material layer, and a resin body (second insulating layer, 4) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (2CR) of a wiring substrate 2 and a semiconductor chip (3). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.Type: GrantFiled: September 27, 2013Date of Patent: December 5, 2017Assignee: Renesas Electronics CorporationInventors: Yoshikazu Shimote, Shinji Baba, Toshihiro Iwasaki, Kazuyuki Nakagawa
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Patent number: 9831166Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: GrantFiled: January 4, 2017Date of Patent: November 28, 2017Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Eiji Hayashi, Kyo Go, Kozo Harada, Shinji Baba
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Patent number: 9818679Abstract: This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled to a plurality of signal wirings drawn inside are located between a plurality of rows of signal bonding electrodes and a central region where a plurality of bonding electrodes for core power supply are located so that the chip pad pitch can be decreased and the cost of the BGA can be reduced without an increase in the number of layers in the multilayer wiring substrate.Type: GrantFiled: September 30, 2015Date of Patent: November 14, 2017Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Shinji Baba, Toshihiro Iwasaki, Masaki Watanabe
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Patent number: 9735637Abstract: There is provided an alternating current generator for a vehicle, including: a rotor (1), a flywheel (3), and main magnets (4) and auxiliary magnets (5) alternately arranged; and a stator (2). Each of the main magnets (4) is magnetized to an N-pole and an S-pole in a radial direction, whereas the main magnets (4) are arranged so that the main magnets (4) adjacent to each other through corresponding one of the auxiliary magnets (5) therebetween are magnetized to have opposite polarity patterns. Each of the auxiliary magnets (5) is magnetized to the N-pole and the S-pole in the circumferential direction, whereas the auxiliary magnets (5) are arranged so that the auxiliary magnets (5) adjacent to each other through corresponding one of the main magnets (4) therebetween are magnetized to have opposite polarity patterns.Type: GrantFiled: October 2, 2013Date of Patent: August 15, 2017Assignee: Mitsubishi Electric CorporationInventors: Shingo Akamatsu, Shinji Baba
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Publication number: 20170117216Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: ApplicationFiled: January 4, 2017Publication date: April 27, 2017Inventors: Eiji HAYASHI, Kyo GO, Kozo HARADA, Shinji BABA
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Publication number: 20170092614Abstract: The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.Type: ApplicationFiled: December 9, 2016Publication date: March 30, 2017Inventors: Toshihiro IWASAKI, Takeumi KATO, Takanori OKITA, Yoshikazu SHIMOTE, Shinji BABA, Kazuyuki NAKAGAWA, Michitaka KIMURA
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Patent number: 9576890Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: GrantFiled: August 19, 2016Date of Patent: February 21, 2017Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Eiji Hayashi, Kyo Go, Kozo Harada, Shinji Baba
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Publication number: 20170033038Abstract: A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad. The first conductor pattern includes a first opening in a region overlapping with each of the first terminal pad and the second terminal pad in the second wiring layer.Type: ApplicationFiled: April 24, 2014Publication date: February 2, 2017Inventors: Kazuyuki NAKAGAWA, Shinji BABA, Takeumi KATO
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Patent number: 9559573Abstract: A method of manufacturing a stator of an electric rotating machine is provided. The stator includes a plurality of teeth radially extended from a yoke portion formed by stacking steel sheets, a stator core having an insulating film on a surface of the teeth, and a winding portion including a plurality of layers of a power generating coil wound around each of the plurality of teeth. The method includes: a step of forming an insulating coating film by impregnating the power generating coil in a lower layer portion of the winding portion with a varnish using a liquid-type thermosetting resin, thereafter covering the power generating coil in a surface portion of the winding portion with a thermally meltable powder resin, and melt-bonding and thereafter curing the powder resin; and a step of curing the varnish that is performed simultaneously with the step of forming an insulating coating film.Type: GrantFiled: April 25, 2013Date of Patent: January 31, 2017Assignee: Mitsubishi Electric CorporationInventor: Shinji Baba
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Publication number: 20160358846Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: ApplicationFiled: August 19, 2016Publication date: December 8, 2016Inventors: Eiji HAYASHI, Kyo GO, Kozo HARADA, Shinji BABA
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Patent number: 9496153Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: GrantFiled: February 17, 2016Date of Patent: November 15, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Eiji Hayashi, Kyo Go, Kozo Harada, Shinji Baba
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Patent number: 9449854Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: GrantFiled: February 17, 2016Date of Patent: September 20, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Eiji Hayashi, Kyo Go, Kozo Harada, Shinji Baba
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Publication number: 20160233189Abstract: In a semiconductor device (SP1) according to an embodiment, a solder resist film (first insulating layer, SR1) which is in contact with the base material layer, and a resin body (second insulating layer, 4) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (2CR) of a wiring substrate 2 and a semiconductor chip (3). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.Type: ApplicationFiled: September 27, 2013Publication date: August 11, 2016Applicant: Renesas Electronics CorporationInventors: Yoshikazu SHIMOTE, Shinji BABA, Toshihiro IWASAKI, Kazuyuki NAKAGAWA
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Publication number: 20160196987Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: ApplicationFiled: February 17, 2016Publication date: July 7, 2016Inventors: Eiji HAYASHI, Kyo GO, Kozo HARADA, Shinji BABA
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Patent number: 9349678Abstract: The reliability of a semiconductor device is improved. A probe mark is formed on a probe region of a pad covered with a protective insulating film. And, a pillar-shaped electrode has a first portion formed on an opening region and a second portion that is extended over the probe region from the upper portion of the opening region. At this time, a center position of the opening region is shifted from a center position of the pillar-shaped electrode that is opposed to a bonding finger.Type: GrantFiled: June 25, 2015Date of Patent: May 24, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Yoshihiro Ono, Nobuhiro Kinoshita, Tsuyoshi Kida, Jumpei Konno, Kenji Sakata, Kentaro Mori, Shinji Baba
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Publication number: 20160111388Abstract: A technique capable of improving reliability of a semiconductor device is provided. In the present invention, as a wiring board on which a semiconductor chip is mounted, a build-up wiring board is not used but a through wiring board THWB is used. In this manner, in the present invention, the through wiring board formed of only a core layer is used, so that it is not required to consider a difference in thermal expansion coefficient between a build-up layer and the core layer, and besides, it is not required either to consider the electrical disconnection of a fine via formed in the build-up layer because the build-up layer does not exist. As a result, according to the present invention, the reliability of the semiconductor device can be improved while a cost is reduced.Type: ApplicationFiled: December 30, 2015Publication date: April 21, 2016Inventors: Shinji Baba, Masaki Watanabe, Muneharu Tokunaga, Kazuyuki Nakagawa
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Patent number: 9299681Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.Type: GrantFiled: December 12, 2014Date of Patent: March 29, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Eiji Hayashi, Kyo Go, Kozo Harada, Shinji Baba
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Patent number: 9293405Abstract: A technique capable of improving reliability of a semiconductor device is provided. In the present invention, as a wiring board on which a semiconductor chip is mounted, a build-up wiring board is not used but a through wiring board THWB is used. In this manner, in the present invention, the through wiring board formed of only a core layer is used, so that it is not required to consider a difference in thermal expansion coefficient between a build-up layer and the core layer, and besides, it is not required either to consider the electrical disconnection of a fine via formed in the build-up layer because the build-up layer does not exist. As a result, according to the present invention, the reliability of the semiconductor device can be improved while a cost is reduced.Type: GrantFiled: March 22, 2011Date of Patent: March 22, 2016Assignee: Renesas Electronics CorporationInventors: Shinji Baba, Masaki Watanabe, Muneharu Tokunaga, Kazuyuki Nakagawa
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Publication number: 20160027723Abstract: This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled to a plurality of signal wirings drawn inside are located between a plurality of rows of signal bonding electrodes and a central region where a plurality of bonding electrodes for core power supply are located so that the chip pad pitch can be decreased and the cost of the BGA can be reduced without an increase in the number of layers in the multilayer wiring substrate.Type: ApplicationFiled: September 30, 2015Publication date: January 28, 2016Inventors: Shinji BABA, Toshihiro IWASAKI, Masaki Watanabe
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Publication number: 20150380345Abstract: The reliability of a semiconductor device is improved. A probe mark is formed on a probe region of a pad covered with a protective insulating film. And, a pillar-shaped electrode has a first portion formed on an opening region and a second portion that is extended over the probe region from the upper portion of the opening region. At this time, a center position of the opening region is shifted from a center position of the pillar-shaped electrode that is opposed to a bonding finger.Type: ApplicationFiled: June 25, 2015Publication date: December 31, 2015Inventors: Yoshihiro ONO, Nobuhiro KINOSHITA, Tsuyoshi KIDA, Jumpei KONNO, Kenji SAKATA, Kentaro MORI, Shinji BABA