Patents by Inventor Shinji Saito

Shinji Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrical Connector
    Publication number: 20140242827
    Abstract: [Problem] To provide an electrical connector that suppresses cross-talk. [Resolution Means] An electrical connector includes a main body 14 and a cover 16, with the main body 14 and the cover 16 demarcating a space housing a cable 3; the main body 14 includes an upper housing 20, a lower housing 22, a wiring substrate 28 arranged between the upper housing 20 and the lower housing 22, and a shield member 30 arranged interposing the upper housing 20 and the lower housing 22; and the wiring substrate 28 includes a contact 24 for electrically connecting to the cable 3, a connection terminal 26 for electrically connecting to a mating connector, and connecting conductor wiring L for electrically connecting the contact 24 and the connection terminal 26.
    Type: Application
    Filed: October 25, 2012
    Publication date: August 28, 2014
    Inventors: Shinji Saito, Takayuki Hayauchi, Yoshihisa Kawate
  • Ceramic member, probe holder, and method of manufacturing ceramic member
    Patent number: 8806969
    Abstract: To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: August 19, 2014
    Assignee: NHK Spring Co., Ltd.
    Inventors: Shinya Miyaji, Shinji Saito
  • HEAT DISSIPATION STRUCTURE, POWER MODULE, METHOD OF MANUFACTURING HEAT DISSIPATION STRUCTURE, AND METHOD OF MANUFACTURING POWER MODULE
    Publication number: 20140226284
    Abstract: A heat dissipation structure includes a ceramic substrate having an insulation quality, a metal member containing a metal or an alloy and joined to a surface of the ceramic substrate by a brazing material, a metal film layer formed by accelerating a powder containing a metal or an alloy with a gas and by spraying and depositing the powder in a solid phase state on a surface of the metal member, and a heat pipe that is in a rod shape and capable of controlling a temperature and comprises a heat absorbing unit configured to absorb heat from outside at one end of the heat pipe and a heat dissipating unit configured to dissipate heat to the outside at another end of the heat pipe, wherein the heat absorbing unit is embedded inside the metal film layer.
    Type: Application
    Filed: September 20, 2012
    Publication date: August 14, 2014
    Applicant: NHK SPRING CO., LTD.
    Inventors: Yuichiro Yamauchi, Shinji Saito, Masaru Akabayashi, Shogo Mori
  • Internal combustion engine including valve deactivation mechanism
    Patent number: 8794213
    Abstract: An internal combustion engine which includes a valve deactivation mechanism for reducing an output power shock upon changing of the cylinder number. In an internal combustion engine which includes a valve deactivation mechanism driven by a slide pin which is driven by hydraulic pressure, response delay time after a signal is sent to oil control valves until an intake valve and an exhaust valve are activated or deactivated is used to form a control map in response to control parameters, and the valve deactivation mechanism is controlled based on the control map.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: August 5, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventors: Hayato Maehara, Shunsuke Kitawaki, Shinji Saito, Yukihiro Asada
  • Semiconductor device
    Patent number: 8754528
    Abstract: A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: June 17, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Saito, Maki Sugai, Eiji Muramoto, Shinya Nunoue
  • Semiconductor light emitting device and manufacturing method of the same
    Patent number: 8729575
    Abstract: The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(?5.35e19)2?(X?2.70e19)2}1/2?4.63e19 holds.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: May 20, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jongil Hwang, Hung Hung, Yasushi Hattori, Rei Hashimoto, Shinji Saito, Masaki Tohyama, Shinya Nunoue
  • LAMINATED BODY AND METHOD OF MANUFACTURING LAMINATED BODY
    Publication number: 20140134448
    Abstract: The laminated body includes a ceramic base member having an insulating property, an intermediate layer including metal or alloy as a main component formed on a surface of the ceramic base member, and a metal film layer (a circuit layer and a cooling fin) formed on a surface of the intermediate layer by accelerating a powder of metal or alloy with a gas and spraying and depositing the powder on the surface of the intermediate layer as the powder is in a solid state.
    Type: Application
    Filed: July 11, 2012
    Publication date: May 15, 2014
    Applicant: NHK SPRING CO., LTD.
    Inventors: Yuichiro Yamauchi, Satoshi Hirano, Shinji Saito, Toshihiko Hanamachi
  • LIGHT-EMITTING ELECTRIC-POWER GENERATION MODULE AND LIGHT-EMITTING ELECTRIC-POWER GENERATION DEVICE
    Publication number: 20140111095
    Abstract: A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element.
    Type: Application
    Filed: April 1, 2013
    Publication date: April 24, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Rei HASHIMOTO, Jongil Hwang, Shinji Saito, Shinya Nunoue
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20140080240
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers.
    Type: Application
    Filed: February 28, 2013
    Publication date: March 20, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Jongil Hwang, Rei Hashimoto, Shinji Saito, Hung Hung, Shinya Nunoue
  • LAMINATION, CONDUCTIVE MATERIAL, AND METHOD FOR MANUFACTURING LAMINATION
    Publication number: 20140069700
    Abstract: A lamination includes: a substrate formed of aluminum or aluminum alloy; an intermediate layer formed of any one metal or nonmetal selected from the group consisting of silver, gold, chromium, iron, germanium, manganese, nickel, silicon, and zinc, or an alloy containing the any one metal, on a surface of the substrate; and a film layer formed by accelerating powder material of copper or copper alloy together with gas heated to a temperature lower than a melting point of the powder material and spraying and depositing a solid-phase powder material onto a surface of the intermediate layer.
    Type: Application
    Filed: March 22, 2012
    Publication date: March 13, 2014
    Applicant: NHK SPRING CO., LTD.
    Inventors: Satoshi Hirano, Yuichiro Yamauchi, Masaru Akabayashi, Shinji Saito, Toshihiko Hanamachi
  • PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION SYSTEM, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION ELEMENT
    Publication number: 20140048818
    Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1?p?n and 2?n) of 1.59?Ap?3.26 and a full width at half maximum Fp (eV) (where 1?p?n and 2?n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1?q?m and 2?m?n), and the m photoelectric conversion layers each satisfy the relationship of Ap?Fp<Bq?Ap with respect to any one of the n light emission peaks.
    Type: Application
    Filed: July 29, 2013
    Publication date: February 20, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shinji SAITO, Rei HASHIMOTO, Mizunori EZAKI, Shinya NUNOUE, Hironori ASAI
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20140042388
    Abstract: According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Alx1Ga1-x1N (0.1?x1?0.35).
    Type: Application
    Filed: March 14, 2013
    Publication date: February 13, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Jongil Hwang, Shinji Saito, Rei Hashimoto, Shinya Nunoue
  • Semiconductor laser device
    Patent number: 8649408
    Abstract: According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: February 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Rei Hashimoto, Maki Sugai, Jongil Hwang, Yasushi Hattori, Shinji Saito, Masaki Tohyama, Shinya Nunoue
  • Positive-electrode material for a lithium ion secondary battery and manufacturing method of the same
    Patent number: 8597835
    Abstract: Provided is a positive electrode material for a safe, high capacity, long lifetime lithium ion secondary battery capable of large current charging and discharging. The positive electrode material contains between 5% by mass or more and 30% by mass or less of a carbon black composite formed by joining together fibrous carbon and carbon black wherein ash is 1.0% or less by mass in accordance with JIS K 1469 and the remainder includes olivine-type lithium iron phosphate, and volatile oxygen-containing functional groups which constitutes 1.0% or less by mass of the positive electrode material. The fibrous carbon is preferably a nanotube having a fiber diameter of 5 nm or more and 50 nm or less and a specific surface area between 50 m2/g or more and 400 m2/g or less.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: December 3, 2013
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takashi Kawasaki, Hiroshi Sakashita, Takehiko Sawai, Shinji Saito
  • CONDUCTIVE MEMBER
    Publication number: 20130292152
    Abstract: A conductive member disposed as a power supply line and the like includes: a first conductive material and a second conductive material, at least one of which includes a conductive material having electrical resistance lower than that of aluminum; and a metal film formed by depositing powder including a metal, which is accelerated together with a gas and sprayed, in a sold state, onto a surface of a butting part, where the first conductive material and the second conductive material are butted against each other.
    Type: Application
    Filed: December 26, 2011
    Publication date: November 7, 2013
    Applicant: NHK SPRING CO., LTD.
    Inventors: Takashi Kayamoto, Shinji Saito, Yuichiro Yamauchi
  • BRAZING MATERIAL FOR BONDING IN ATMOSPHERE, BONDED ARTICLE, AND CURRENT COLLECTING MATERIAL
    Publication number: 20130260285
    Abstract: A brazing alloy for bonding in air contains Ag, B, and Si, as essential components, in which the total of constituent elements except for Ag is set to more than 50% by volume and not more than 90% by volume, Si content in the constituent elements except for Ag is set to more than 22% by volume, and B content in the constituent elements except for Ag is set to more than 14% by volume. In a bonded layer of a bonded specimen of the present invention, after holding at high temperature, no void as observed in a bonded specimen after holding at high temperature of a Comparative Sample is observed, the brazing alloy is sufficiently melted, and superior gas sealing characteristics are maintained even after holding at high temperature for a long time.
    Type: Application
    Filed: December 1, 2011
    Publication date: October 3, 2013
    Applicant: NHK SPRING CO., LTD.
    Inventors: Yuichiro Yamauchi, Shinji Saito
  • TENNIS RACKET AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20130244817
    Abstract: A tennis racket includes a frame that surrounds a hitting face for hitting a ball, wherein a foam material is provided inside two side portions of the frame on opposite sides of a predetermined area of the hitting face, and the two side portions of the frame have a strength that is higher than a strength of another portion of the frame.
    Type: Application
    Filed: February 26, 2013
    Publication date: September 19, 2013
    Applicant: YONEX KABUSHIKI KAISHA
    Inventors: Shinji Saito, Junya Suetake, Tomoya Iwasawa
  • LAMINATE AND METHOD FOR PRODUCING LAMINATE
    Publication number: 20130236738
    Abstract: It is possible to obtain a laminate having high adhesion strength between ceramic and a metal coating by providing the following: an insulating ceramic substrate; an intermediate layer formed on the surface of the ceramic substrate and having a metal-containing principal component metal layer and an active ingredient layer including metal, a metal oxide, or a metal hydride; and a metal coating formed on the surface of the intermediate layer by accelerating a metal-containing powder with gas, and depositing the same on the surface thereof by spraying while in a solid state.
    Type: Application
    Filed: November 17, 2011
    Publication date: September 12, 2013
    Applicant: NHK SPRING CO., LTD.
    Inventors: Yuichiro Yamauchi, Shinji Saito, Masaru Akabayashi, Satoshi Hirano
  • SEMICONDUCTOR DEVICE
    Publication number: 20130234155
    Abstract: A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.
    Type: Application
    Filed: April 26, 2013
    Publication date: September 12, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shinji Saito, Maki Sugai, Eiji Muramoto, Shinya Nunoue
  • Semiconductor light emitting device
    Patent number: 8526477
    Abstract: A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: September 3, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Saito, Jongil Hwang, Shinya Nunoue