Patents by Inventor Shinji Saito
Shinji Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200006922Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: ApplicationFiled: August 12, 2019Publication date: January 2, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO, Yasunobu KAI
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Publication number: 20190392745Abstract: A display device, program, and display method that even if the luminance is changed with respect to the previously set relationship between the ambient illuminance and the luminance of a display, are able to suppress a change in the previous relationship. A display device includes a display, an illuminance acquisition unit configured to acquire an ambient-light illuminance that is an illuminance of ambient light, a relationship acquisition unit configured to acquire a relationship between the ambient-light illuminance and a luminance of the display, a controller configured to control the relationship, and a setting unit configured to set a first set point and a second set point. The first set point is a point specified by a luminance set at an illuminance equal to or greater than a particular illuminance Is and the illuminance.Type: ApplicationFiled: July 4, 2017Publication date: December 26, 2019Applicant: EIZO CorporationInventors: Shinji SAITO, Kengo MIYAMOTO, Keita ASAHI
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Publication number: 20190362906Abstract: The present invention provides a lithium secondary battery for an ISS dischargeable at not less than 15 ItA when the temperature is ?30 degrees centigrade and chargeable at not less than 50 ItA. The present invention also provides an electrochemical device in which (1) a pressure of 0.3 kgf/cm2 to 1.Type: ApplicationFiled: January 11, 2017Publication date: November 28, 2019Inventors: Takehiko SAWAI, Shinji SAITO, Kazunori URAO
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Patent number: 10490979Abstract: A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.Type: GrantFiled: December 27, 2017Date of Patent: November 26, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Rei Hashimoto, Shinji Saito, Tsutomu Kakuno, Kei Kaneko, Yasunobu Kai, Naotada Okada
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Patent number: 10490977Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.Type: GrantFiled: November 9, 2018Date of Patent: November 26, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Rei Hashimoto, Shinji Saito, Yuichiro Yamamoto, Tsutomu Kakuno, Kei Kaneko, Tomohiro Takase
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Patent number: 10468430Abstract: According to one embodiment, a semiconductor storage device includes a substrate including an insulating region and a semiconductor region, an insulating film disposed on upper surfaces of the semiconductor region and the insulating region, a first conductive film disposed on an upper surface of the insulating film, and including a terrace region, and a first contact plug disposed on an upper surface of the terrace region of the first conductive film. The insulating region includes an upper surface positioned directly under the first contact plug. A lower surface of the insulating film is in contact with the upper surfaces of the semiconductor region and the insulating region, in the region directly under the terrace region.Type: GrantFiled: March 10, 2017Date of Patent: November 5, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shinji Saito, Toshifumi Minami
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Patent number: 10447012Abstract: A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.Type: GrantFiled: November 13, 2018Date of Patent: October 15, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shinji Saito, Tomohiro Takase, Rei Hashimoto, Tsutomu Kakuno
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Patent number: 10424899Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: GrantFiled: September 4, 2018Date of Patent: September 24, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shinji Saito, Tsutomu Kakuno, Rei Hashimoto, Kei Kaneko, Yasunobu Kai
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Publication number: 20190288280Abstract: Provided is positive electrode material for a highly safe lithium-ion secondary battery that can charge and discharge a large current while having long service life. Disclosed are composite particles comprising: particles of lithium-containing phosphate; and carbon coating comprising at least one carbon material selected from the group consisting of (i) fibrous carbon material, (ii) chain-like carbon material, and (iii) carbon material produced by linking together fibrous carbon material and chain-like carbon material, wherein each particle is coated with the carbon coating. The fibrous carbon material is preferably a carbon nanotube with an average fiber size of 5 to 200 nm. The chain-like carbon material is preferably carbon black produced by linking, like a chain, primary particles with an average particle size of 10 to 100 nm. The lithium-containing phosphate is preferably LiFePO4, LiMnPO4, LiMnxFe(1-x)PO4, LiCoPO4, or Li3V2(PO4)3.Type: ApplicationFiled: June 3, 2019Publication date: September 19, 2019Applicant: DENKA COMPANY LIMITEDInventors: Takashi KAWASAKI, Nobuyuki YOSHINO, Hiroshi MURATA, Takehiko SAWAI, Shinji SAITO, Kazunori URAO
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Patent number: 10403893Abstract: A positive electrode material is used to produce a positive electrode of a lithium secondary battery, the positive electrode material being a composite lithium material that includes a first lithium compound and a second lithium compound. For instance, the first lithium compound is in the form of particles and comprises at least one compound selected from a layered lithium compound and a spinel-type lithium compound. Preferably, the second lithium compound comprises at least one compound selected from a lithium-containing phosphate compound and a lithium-containing silicate compound. An amorphous carbon material layer and/or graphene-structured carbon material layer is present on the entire surface of the first lithium compound and the second lithium compound. The second lithium compound forms a thin-film layer on part or the entirety of the carbon material layer present on the surface of the first lithium compound particles.Type: GrantFiled: August 21, 2014Date of Patent: September 3, 2019Assignees: HYDRO-QUEBEC, SEI CORPORATIONInventors: Takehiko Sawai, Shinji Saito, Kazunori Urao, Kazuma Hanai, Karim Zaghib, Abdelbast Guerfi, Martin Dontigny
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Publication number: 20190199065Abstract: A quantum cascade laser has an active layer, a first and second cladding layer, and an optical guide layer. The active layer has a plurality of injection quantum well regions and a plurality of light-emitting quantum well regions. The each of the injection quantum well regions and the each of the light-emitting quantum well regions are alternatively stacked. The first and second cladding layers are provided to interpose the active layer from both sides, and have a refractive index lower than an effective refractive index of the each of the light-emitting quantum well regions. The optical guide layer is disposed to divide the active layer into two parts. The optical guide layer has a refractive index higher than the effective refractive index of the each of the light-emitting quantum well regions, and has a thickness greater than the thickness of all well layers of quantum well layers.Type: ApplicationFiled: December 27, 2017Publication date: June 27, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Shinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO
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Publication number: 20190199064Abstract: A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.Type: ApplicationFiled: December 27, 2017Publication date: June 27, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Rei HASHIMOTO, Shinji Saito, Tsutomu Kakuno, Kei Kaneko, Yasunobu Kai, Naotada Okada
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Publication number: 20190148915Abstract: A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.Type: ApplicationFiled: November 13, 2018Publication date: May 16, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shinji SAITO, Tomohiro TAKASE, Rei HASHIMOTO, Tsutomu KAKUNO
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Publication number: 20190148912Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.Type: ApplicationFiled: November 9, 2018Publication date: May 16, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Rei HASHIMOTO, Shinji SAITO, Yuichiro YAMAMOTO, Tsutomu KAKUNO, Kei KANEKO, Tomohiro TAKASE
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Patent number: 10290995Abstract: A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.Type: GrantFiled: September 1, 2017Date of Patent: May 14, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Tsutomu Kakuno, Shinji Saito, Osamu Yamane
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Publication number: 20190081454Abstract: A distributed feedback semiconductor laser of includes a semiconductor stacked body and a first electrode. The semiconductor stacked body includes a first layer, an active layer that is provided on the first layer and is configured to emit laser light by an intersubband optical transition, and a second layer that is provided on the active layer. The semiconductor stacked body has a first surface including a flat portion and a trench portion; the flat portion includes a front surface of the second layer; the trench portion reaches the first layer from the front surface; the flat portion includes a first region and a second region; the first region extends along a first straight line; the second region extends to be orthogonal to the first straight line; and the trench portion and the second region outside the first region form a diffraction grating having a prescribed pitch along the first straight line. The first electrode is provided in the first region.Type: ApplicationFiled: September 1, 2016Publication date: March 14, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shinji SAITO, Tsutomu KAKUNO, Osamu YAMANE, Akira TSUMURA
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Publication number: 20190081456Abstract: A semiconductor laser device includes an active layer, a first layer, and a surface metal film. Multiple quantum well layers are stacked in the active layer; and the active layer is configured to emit laser light of a terahertz wave by an intersubband transition. The first layer is provided on the active layer and includes a first surface in which multiple pits are provided to form a two-dimensional lattice. The surface metal film is provided on the first layer and includes multiple openings. Each of the pits is asymmetric with respect to a line parallel to a side of the lattice. The laser light passes through the multiple openings and is emitted in a direction substantially perpendicular to the active layer.Type: ApplicationFiled: September 2, 2016Publication date: March 14, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Osamu YAMANE, Shinji SAITO, Tsutomu KAKUNO, Kei KANEKO, Rei HASHIMOTO
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Patent number: 10230089Abstract: The present invention provides an electrolyte holder for a lithium secondary battery capable of holding an electrolytic solution inside electrodes or at an interface between the separator and each of the electrodes, preventing electrolyte shortage inside the electrodes, and restraining dendrite from precipitating and growing and also provide the lithium secondary battery, using the electrolyte holder, which is capable of achieving a cycle life to such an extent that the lithium secondary battery can be used for industrial application. An electrolyte holder (3) for use in the lithium secondary battery consists of a multi-layer structure having at least two hydrophilic fibrous layers (A, B) having different porosities. The electrolyte holder (3) is composed of an electrode group formed by winding a cathode (2) and an anode (1) or laminating the cathode (2) and the anode (1) one upon another with an electrolyte holder (3) serving as a separator interposed between the cathode (2) and the anode (1).Type: GrantFiled: March 19, 2012Date of Patent: March 12, 2019Assignees: SEI CORPORATION, NIPPON KODOSHI CORPORATIONInventors: Takehiko Sawai, Shinji Saito, Kazunori Urao, Jyunichi Ushimoto, Masahiko Ueta, Norihiro Wada
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Publication number: 20190074663Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: ApplicationFiled: September 4, 2018Publication date: March 7, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO, Yasunobu KAI
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Publication number: 20180287155Abstract: A positive-electrode material for a lithium secondary battery. The material includes a lithium oxide compound or a complex oxide as reactive substance. The material also includes at least one type of carbon material, and optionally a binder. A first type of carbon material is provided as a coating on the reactive substance particles surface. A second type of carbon material is carbon black. And a third type of carbon material is a fibrous carbon material provided as a mixture of at least two types of fibrous carbon material different in fiber diameter and/or fiber length. Also, a method for preparing the material as well as lithium secondary batteries including the material.Type: ApplicationFiled: June 5, 2018Publication date: October 4, 2018Applicants: Hydro-Quebec, SEI CorporationInventors: Karim ZAGHIB, Abdelbast GUERFI, Pierre HOVINGTON, Takehiko SAWAI, Shinji SAITO, Kazunori URAO