Abstract: According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

Abstract: According to one embodiment, a semiconductor light emitting element includes a first electrode, first and second light emitting units, first and second conductive layers, a first connection electrode, a first dielectric layer, first and second pads, and a first inter-light emitting unit dielectric layer. The first light emitting unit includes first and second semiconductor layers, and a first light emitting layer. The first semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The second light emitting unit includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is electrically connected with the first electrode. The first conductive layer is electrically connected with the third semiconductor layer. The second conductive layer is electrically connected with the second semiconductor layer.

Abstract: A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element.

Abstract: A conductive member disposed as a power supply line and the like includes: a first conductive material and a second conductive material, at least one of which includes a conductive material having electrical resistance lower than that of aluminum; and a metal film formed by depositing powder including a metal, which is accelerated together with a gas and sprayed, in a sold state, onto a surface of a butting part, where the first conductive material and the second conductive material are butted against each other.

Abstract: According to one embodiment, a light emitting device includes a light emitting unit, a first wavelength selection layer, and a wavelength conversion layer. The light emitting unit emits a first light having a first peak wavelength. The first wavelength selection layer is transmissive to the first light. The first wavelength selection layer has a first reflectance with respect to the first peak wavelength. The wavelength conversion layer absorbs at least a portion of the first light passed through the first wavelength selection layer. The wavelength conversion layer emits a second light having a second peak wavelength longer than the first peak wavelength. The first wavelength selection layer has a second reflectance with respect to the second peak wavelength. The second reflectance is higher than the first reflectance.

Abstract: A lithium-ion secondary battery including positive and negative electrodes, a separator element, an electrical conductor element and a binder, wherein the positive electrode includes a lithium-containing metal phosphate compound coated with a carbon material having at least one phase selected from a graphene phase and an amorphous phase, and further includes carbon black and a fibrous carbon material and wherein the negative-electrode material includes a graphite carbon material having at least one carbon phase selected from a graphene phase and an amorphous phase, and further includes carbon black and a fibrous carbon material, and wherein the binder includes a water-soluble synthetic resin or a water-dispersible synthetic resin. The most preferred positive electrode includes LiFePO4. The most preferred negative electrode includes artificial graphite or graphitazable powder. The most preferred binder is carboxyl methyl cellulose further including a surface active agent.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Alx1Ga1-x1N (0.1?x1?0.35).

Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1?p?n and 2?n) of 1.59?Ap?3.26 and a full width at half maximum Fp (eV) (where 1?p?n and 2?n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1?q?m and 2?m?n), and the m photoelectric conversion layers each satisfy the relationship of Ap?Fp<Bq?Ap with respect to any one of the n light emission peaks.

Abstract: There is provided a positive-electrode material for a lithium secondary battery. The material comprises a lithium oxide compound or a complex oxide as reactive substance. The material also comprises at least one type of carbon material, and optionally a binder. A first type of carbon material is provided as a coating on the reactive substance particles surface. A second type of carbon material is carbon black. And a third type of carbon material is a fibrous carbon material provided as a mixture of at least two types of fibrous carbon material different in fiber diameter and/or fiber length. Also, there is provided a method for preparing the material as well as lithium secondary batteries comprising the material.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity.

Abstract: The present invention provides an electrolyte holder for a lithium secondary battery capable of holding an electrolytic solution inside electrodes or at an interface between the separator and each of the electrodes, preventing electrolyte shortage inside the electrodes, and restraining dendrite from precipitating and growing and also provide the lithium secondary battery, using the electrolyte holder, which is capable of achieving a cycle life to such an extent that the lithium secondary battery can be used for industrial application. An electrolyte holder (3) for use in the lithium secondary battery consists of a multi-layer structure having at least two hydrophilic fibrous layers (A, B) having different porosities. The electrolyte holder (3) is composed of an electrode group formed by winding a cathode (2) and an anode (1) or laminating the cathode (2) and the anode (1) one upon another with an electrolyte holder (3) serving as a separator interposed between the cathode (2) and the anode (1).

Abstract: According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting element includes a first electrode, first and second light emitting units, first and second conductive layers, a first connection electrode, a first dielectric layer, first and second pads, and a first inter-light emitting unit dielectric layer. The first light emitting unit includes first and second semiconductor layers, and a first light emitting layer. The first semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The second light emitting unit includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is electrically connected with the first electrode. The first conductive layer is electrically connected with the third semiconductor layer. The second conductive layer is electrically connected with the second semiconductor layer.

Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1?p?n and 2?n) of 1.59?Ap?3.26 and a full width at half maximum Fp (eV) (where 1?p?n and 2?n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1?q?m and 2?m?n), and the m photoelectric conversion layers each satisfy the relationship of Ap?Fp<Bq?Ap with respect to any one of the n light emission peaks.

Abstract: Provided is positive electrode material for a highly safe lithium-ion secondary battery that can charge and discharge a large current while having long service life. Disclosed are composite particles comprising: particles of lithium-containing phosphate; and carbon coating comprising at least one carbon material selected from the group consisting of (i) fibrous carbon material, (ii) chain-like carbon material, and (iii) carbon material produced by linking together fibrous carbon material and chain-like carbon material, wherein each particle is coated with the carbon coating. The fibrous carbon material is preferably a carbon nanotube with an average fiber size of 5 to 200 nm. The chain-like carbon material is preferably carbon black produced by linking, like a chain, primary particles with an average particle size of 10 to 100 nm. The lithium-containing phosphate is preferably LiFePO4, LiMnPO4, LiMnXFe(1-X)PO4, LiCoPO4, or Li3V2(PO4)3.

Abstract: Provided is positive electrode material for a highly safe lithium-ion secondary battery that can charge and discharge a large current while having long service life. Disclosed are composite particles comprising: at least one carbon material selected from the group consisting of (i) fibrous carbon material, (ii) chain-like carbon material, and (iii) carbon material produced by linking together fibrous carbon material and chain-like carbon material; and lithium-containing phosphate, wherein at least one fine pore originating from the at least one carbon material opens to outside the composite particle. Preferably, the composite particles are coated with carbon. The fibrous carbon material is preferably a carbon nanotube with an average fiber size of 5 to 200 nm. The chain-like carbon material is preferably carbon black produced by linking, like a chain, primary particles with an average particle size of 10 to 100 nm.

Abstract: An object of the invention is to provide an electrode material slurry for preparation of lithium-ion secondary batteries favorable in properties and superior in storage stability and an aqueous binder composition for lithium-ion secondary batteries that can be used for production of lithium-ion secondary batteries superior in discharge rate characteristics and cycle characteristics. Provided is a binder composition for lithium-ion secondary battery electrode, comprising polymer particles containing (a) an ethylenic unsaturated carboxylic ester compound and (b) an ethylenic unsaturated sulfonic acid compound at a (a)/(b) mass ratio of (98 to 91)/(2 to 9) in a total (a) and (b) amount of 70 mass % or more, based on the monomeric raw materials.

Abstract: A racket including: a handle; an annular frame having a plurality of through holes, and a groove section provided on an outer peripheral face of the frame along a circumferential direction of the frame; a shaft connecting the handle and the frame; and a string that passes through the through hole to the outside of the frame, and that is folded back on the groove section, wherein when either one of a longitudinal direction of the racket and a width direction perpendicular to the longitudinal direction on a hitting surface of the racket is defined as a first direction, a depth of a position at which the string is folded back at a second position in the first direction is smaller or less than a depth of a position at which the string is folded back at a first position in the first direction, the first position being located on the outer peripheral face of the frame, the second position being located on the outer peripheral face of the frame and outside of the first position in the first direction.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.