Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.

Abstract: An acoustic wave device includes: a substrate; an acoustic reflection layer located in or on the substrate and including an air gap, or an acoustic mirror; a piezoelectric film located on the acoustic reflection layer; lower and upper electrodes located on the acoustic reflection layer so as to sandwich the piezoelectric film so that resonance regions are located within the acoustic reflection layer and share the acoustic reflection layer, one of the lower and upper electrodes being divided, another one of the lower and upper electrodes being not divided, the lower and upper electrodes facing each other across the piezoelectric film in each of the resonance regions; and an insertion film located between the lower and upper electrodes, located in at least a part of an outer peripheral region of each of the resonance regions, and being not located in a center region of each of the resonance regions.

Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate through an air gap; a piezoelectric film located so as to have a resonance region where the lower electrode and an upper electrode face each other across the piezoelectric film and having a lower piezoelectric film and an upper piezoelectric film, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined, an upper end of the second end face being substantially aligned with or located further in than the outer periphery, the lower piezoelectric film having a substantially uniform film thickness between the first end face and the second end face.

Abstract: The present invention is a storage tank including: a tank; a tank main body that stores a liquid material; a cover body that covers an opening of the tank main body; a support body that is positioned opposite to the cover body; a seal body that is sandwiched by a flange provided at the opening end of the tank main body and the cover body; and tightening members that tighten the cover body and the support body, and is capable of, even when the thickness of the flange provided at the opening end of the tank main body is thin, attaching the cover body on the flange while maintaining a contact property.

Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.

Abstract: A piezoelectric thin film resonator includes: an acoustic reflection layer including an air gap or an acoustic mirror; lower and upper electrodes facing each other in a stacking direction, at least a part of each of the lower and upper electrodes being located on or above the acoustic reflection layer; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, at least a part of an end face of the piezoelectric film in a film thickness direction being located between outer outlines of the resonance region and the acoustic reflection layer in at least a part of a region surrounding a resonance region; and an insertion film inserted between the lower and upper piezoelectric films, located in at least a part of an outer peripheral region within the resonance region, and not located in a center region of the resonance region.

Abstract: An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; lower and upper electrodes facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower and upper electrodes and located in at least a part of an outer peripheral region within a resonance region in which the lower and upper electrodes face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower and upper electrodes and located in at least a part of the outer peripheral region, the second insertion layer being not located in the center region, a position of an edge of the second insertion layer being different from a position of an edge of the first insertion film in the resonance region.

Abstract: A piezoelectric thin film resonator includes: lower and upper electrodes located on a substrate and facing each other; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, an outer outline of the upper piezoelectric film coinciding with or being located further out than an outer outline of a resonance region in a region surrounding the resonance region, the outer outline of the upper piezoelectric film being located further in than an outer outline of the lower piezoelectric film in the region; an insertion film interposed between the lower and upper piezoelectric films, located in an outer peripheral region within the resonance region, not located in a central region of the resonance region, and located on an upper surface of the lower piezoelectric film in the region; and a protective film located on the upper electrode in the resonance region, and located so as to cover an end face of the upper piezoelectric film and an upper surface of t

Abstract: An acoustic wave device includes: a piezoelectric thin film resonator that is connected between a first node and a second node; and a resonant circuit that is connected in parallel with the piezoelectric thin film resonator between the first node and the second node, and has a resonant frequency f0 that meets a condition of 2×fa×0.92?f0 where fa represents an antiresonant frequency of the piezoelectric thin film resonator.

Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.

Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode and an upper electrode located on the substrate; a piezoelectric film, at least a part of the piezoelectric film being sandwiched between the upper electrode and the lower electrode, the piezoelectric film including a discontinuous portion in which the piezoelectric film discontinues in at least a part of a region surrounding a center region that includes a center of a resonance region where the upper electrode and the lower electrode face each other across the at least a part of the piezoelectric film.

Abstract: An video display system having room in a generation time of a next frame to be generated on the basis of a gaze direction of the user is provided.

Abstract: A duplexer includes: a first filter connected between a common terminal and a first terminal and including first series and first parallel resonators; a second filter having a passband higher than that of the first filter, connected between the common terminal and a second terminal, and including second series and second parallel resonators; a first chip including the first series and second parallel resonators mounted thereon; a second chip including the first parallel and second series resonators mounted thereon, wherein when GA and HGB represent temperature coefficients of antiresonant frequencies of the first and second series resonators, and HGA and GB represent temperature coefficients of resonant frequencies of the first and second parallel resonators, a magnitude relationship among GA, GB, HGA, and HGB is none of a relationship in which GA (GB) differs from HGA (HGB), and GB (GA) and HGB (HGA) are located between GA (GB) and HGA (HGB).

Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.

Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate through an air gap; a piezoelectric film located so as to have a resonance region where the lower electrode and an upper electrode face each other across the piezoelectric film and having a lower piezoelectric film and an upper piezoelectric film, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined, an upper end of the second end face being substantially aligned with or located further in than the outer periphery, the lower piezoelectric film having a substantially uniform film thickness between the first end face and the second end face.

Abstract: An acoustic wave filter includes: series resonators connected in series; and one or more parallel resonators connected in parallel, wherein at least two series resonators and a parallel resonator therebetween are divided into a first divided resonator, which includes a piezoelectric substance sandwiched between a pair of electrodes in a c-axis orientation direction, and a second divided resonator, which includes another piezoelectric substance sandwiched between another pair of electrodes so that the another pair of electrodes in the c-axis orientation direction has an electric potential opposite to that of the electrodes of the first divided resonator in the c-axis orientation direction, a first group including the first divided resonators and a second group including the second divided resonators are interconnected in parallel between two nodes, and the first divided resonators and the second divided resonators of the at least two series resonators are not electrically interconnected at the two nodes.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted between the lower electrode and the upper electrode, is located in an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, is located in a region that is located outside the resonance region and surrounds the resonance region, is not located in a center region of the resonance region, and includes a first part, which is located in the resonance region and has a first film thickness, and a second part, which is located outside the resonance region and has a second film thickness, the first film thickness being less than the second film thickness.

Abstract: An object is the provision of an optical measuring device that can be carried readily due to its reduced size and that can suppress the incidence of light other than detection light upon a light receiving unit and thus can obtain a measurement result with high accuracy. The optical measuring device includes a first light guiding path forming body having therein a first light guiding path formed by a through hole extending linearly for allowing measurement light from a light source to be incident on a measuring position in which a measurement sample is disposed, and a second light guiding path forming body having therein a second light guiding path formed by a through hole extending linearly for guiding detection light having exited from the measuring position to a light receiving unit.

Abstract: A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate; lower and upper electrodes facing each other across a part of the piezoelectric film; and an insertion film located between the lower and upper electrodes, located in a part of an outer peripheral region within a resonance region where the lower and upper electrodes face each other across the piezoelectric film, and not located in a center region of the resonance region, a first width in the resonance region of the insertion film in a first region, where the upper electrode is extracted from the resonance region, being greater than a third width in the resonance region in a third region other than a second region, where the lower electrode is extracted from the resonance region, and the first region, a second width in the resonance region in a second region being the third width or greater.