Patents by Inventor Shinya EBATA

Shinya EBATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12365987
    Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: July 22, 2025
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroaki Hiramatsu, Shinya Ebata
  • Publication number: 20250115993
    Abstract: There is provided a technique that includes: a process container; an exhaust pipe connected to the process container; an opening/closing valve installed at the exhaust pipe; a pressure regulating valve installed at the exhaust pipe; a first supply system supplying one of a cleaning gas and an additive gas, having a molecular structure different from that of the cleaning gas, into the exhaust pipe through a gas supply pipe connected to an upstream of at least one of the opening/closing and pressure regulating valves; a second supply system supplying the other of the cleaning gas and the additive gas into the process container; and a controller capable of controlling the opening/closing valve, the pressure regulating valve, and the first and second supply systems so as to perform a cleaning process of simultaneously supplying the cleaning gas and the additive gas while the opening/closing and pressure regulating valves are opened.
    Type: Application
    Filed: September 20, 2024
    Publication date: April 10, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Takeo HANASHIMA, Shinya EBATA, Keigo NISHIDA
  • Publication number: 20240425972
    Abstract: There is provided a technique that includes: a) supplying an adsorption inhibition gas to a substrate; b) supplying a precursor gas to the substrate; c) supplying a reaction gas to the substrate; and d) forming a film containing an element contained in the precursor gas on the substrate by performing a), b), and c) a predetermined number of times in a state where an amount of exposure of the precursor gas supplied in b) to the substrate is larger than an amount of exposure of the adsorption inhibition gas supplied in a) to the substrate.
    Type: Application
    Filed: September 3, 2024
    Publication date: December 26, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Tomoya NAGAHASHI, Nagisa SUYAMA, Shinya EBATA, Shingo NOHARA
  • Patent number: 12139787
    Abstract: There is provided a technique that includes a reaction vessel including a first region in which a substrate is arranged and a second region in which no substrate is arranged; a heater configured to heat the first region; a gas supplier configured to supply a plurality of gases including cleaning gases; and a controller that controls at least one selected from the group of the gas supplier, the heater, and a cooler to clean the first region and the second region under different conditions by at least one method selected from the group of a method in which the gas supplier supplies two different kinds of cleaning gases, a method in which the gas supplier supplies one or more cleaning gases from two different locations, and a method in which the heater sets a temperature differently between the first region and the second region.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: November 12, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shinya Ebata, Koei Kuribayashi, Takaaki Noda
  • Publication number: 20240359218
    Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and additive gas that reacts with the cleaning gas, respectively, from first and second supply parts among at least three supply parts into the process container, and (b) separately supplying the cleaning and additive gases, respectively, from the second and first supply parts into the process container. (A) and (b) include stopping the supply of the cleaning and additive gases into the process container and exhausting the process container's interior. In at least one selected from the group of (a) and (b) an inert gas is supplied from each of the at least three supply parts at a same flow rate, after the supply of the cleaning and additive gases is stopped and before the process container is exhausted.
    Type: Application
    Filed: July 10, 2024
    Publication date: October 31, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Koei KURIBAYASHI, Kenji Kameda, Tsukasa Kamakura, Takeo Hanashima, iroaki Hiramatsu, Shinya Ebata, Hiroto Yamagishi, Sadao Hisakado, Takafumi Sasaki, Takatomo Yamaguchi, Shuhei Saido
  • Patent number: 12053805
    Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: August 6, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Koei Kuribayashi, Kenji Kameda, Tsukasa Kamakura, Takeo Hanashima, Hiroaki Hiramatsu, Shinya Ebata, Hiroto Yamagishi, Sadao Hisakado, Takafumi Sasaki, Takatomo Yamaguchi, Shuhei Saido
  • Publication number: 20230115403
    Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
    Type: Application
    Filed: December 14, 2022
    Publication date: April 13, 2023
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroaki HIRAMATSU, Shinya EBATA
  • Patent number: 11591694
    Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: February 28, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroaki Hiramatsu, Shinya Ebata
  • Publication number: 20220301852
    Abstract: There is provided a technique that includes: forming a nitride film containing a predetermined element on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including sequentially performing: (a) supplying a first precursor gas containing a molecular structure containing the predetermined element to the substrate with a pressure of the process chamber being set to a first pressure; (b) supplying a second precursor gas, which is different from the first precursor gas and contains a molecular structure containing the predetermined element and not containing a bond between atoms of the predetermined element, to the substrate with the pressure of the process chamber being set to a second pressure higher than the first pressure; and (c) supplying a nitriding agent to the substrate.
    Type: Application
    Filed: January 13, 2022
    Publication date: September 22, 2022
    Applicant: Kokusai Electric Corporation
    Inventor: Shinya EBATA
  • Patent number: 11170995
    Abstract: There is provided a technique that includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor gas from a first supplier to the substrate in the process chamber; and (b) supplying a reaction gas from a second supplier to the substrate in the process chamber, wherein in (a), an intermediate is generated by decomposing the precursor gas in the first supplier and in the process chamber, the intermediate is supplied to the substrate, and a decomposition amount of the precursor gas in the first supplier is set larger than a decomposition amount of the precursor gas in the process chamber.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: November 9, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shinya Ebata, Hiroaki Hiramatsu
  • Publication number: 20210115563
    Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
    Type: Application
    Filed: December 29, 2020
    Publication date: April 22, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroaki HIRAMATSU, Shinya EBATA
  • Publication number: 20210087678
    Abstract: There is provided a technique that includes a reaction vessel including a first region in which a substrate is arranged and a second region in which no substrate is arranged; a heater configured to heat the first region; a gas supplier configured to supply a plurality of gases including cleaning gases; and a controller that controls at least one selected from the group of the gas supplier, the heater, and a cooler to clean the first region and the second region under different conditions by at least one method selected from the group of a method in which the gas supplier supplies two different kinds of cleaning gases, a method in which the gas supplier supplies one or more cleaning gases from two different locations, and a method in which the heater sets a temperature differently between the first region and the second region.
    Type: Application
    Filed: September 24, 2020
    Publication date: March 25, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shinya EBATA, Koei KURIBAYASHI, Takaaki NODA
  • Patent number: 10907253
    Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply pan while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: February 2, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroaki Hiramatsu, Shinya Ebata
  • Publication number: 20200098555
    Abstract: There is provided a technique that includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor gas from a first supplier to the substrate in the process chamber; and (b) supplying a reaction gas from a second supplier to the substrate in the process chamber, wherein in (a), an intermediate is generated by decomposing the precursor gas in the first supplier and in the process chamber, the intermediate is supplied to the substrate, and a decomposition amount of the precursor gas in the first supplier is set larger than a decomposition amount of the precursor gas in the process chamber.
    Type: Application
    Filed: September 19, 2019
    Publication date: March 26, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shinya EBATA, Hiroaki HIRAMATSU
  • Publication number: 20190255576
    Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).
    Type: Application
    Filed: February 20, 2019
    Publication date: August 22, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Koei KURIBAYASHI, Kenji KAMEDA, Tsukasa KAMAKURA, Takeo HANASHIMA, Hiroaki HIRAMATSU, Shinya EBATA, Hiroto YAMAGISHI, Sadao HISAKADO, Takafumi SASAKI, Takatomo YAMAGUCHI, Shuhei SAIDO
  • Publication number: 20190112710
    Abstract: A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply pan while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.
    Type: Application
    Filed: September 20, 2018
    Publication date: April 18, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroaki HIRAMATSU, Shinya EBATA
  • Patent number: D853979
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: July 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toru Kagaya, Shinya Ebata, Yusaku Okajima, Hiroaki Hiramatsu
  • Patent number: D888196
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: June 23, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yusaku Okajima, Toru Kagaya, Hiroaki Hiramatsu, Shinya Ebata
  • Patent number: D889596
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: July 7, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yusaku Okajima, Toru Kagaya, Hiroaki Hiramatsu, Shinya Ebata
  • Patent number: D925481
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: July 20, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toru Kagaya, Shinya Ebata