Abstract: A water treatment device includes: a dual-pipe structure unit including an outer pipe, an inner pipe provided in the outer pipe, and a prevention member provided between the outer pipe and the inner pipe; and a light source unit radiating ultraviolet light in the axial direction to irradiate water subject to treatment flowing in the inner pipe. The inner pipe includes an opposing end facing the light source unit across a gap and an inflow end positioned opposite to the opposing end. The outer pipe includes an outflow port provided on an outer circumferential surface of the outer pipe. The water subject to treatment flowing out of the inner pipe via the gap flows out from the outflow port.

Abstract: A fluid sterilization device includes: a straight tube that defines a processing flow passage; a light source that radiates ultraviolet light toward the processing flow passage in an axial direction of the straight tube; and a light receiving part that receives a portion of the ultraviolet light output from the light source. The straight tube is made of a fluororesin. The straight tube includes a recess formed in a part of an outer wall surface of the straight tube such that a thin part is partly provided in the straight tube. The thin part has a radial thickness from an inner wall surface of the straight tube that is smaller than a thickness in other parts. The light receiving part is provided in the recess to receive the ultraviolet light transmitted through the thin part.

Abstract: According to one embodiment, there is provided a method of manufacturing a semiconductor device which includes forming an alignment mark in a planned cutting line region of a first surface of a semiconductor substrate, forming a stacked structure above the first surface of the semiconductor substrate, removing the portion of the stacked structure present above the alignment mark, aligning the substrate in the lithography process, by causing infrared light to pass through the semiconductor substrate from a second surface thereof which is on a side opposite to the first surface thereof and performing positional alignment for exposure of a resist pattern based on the location of the alignment mark using infrared light reflected from the alignment mark, and exposing the resist, opening a pattern in the exposed resist, and further processing the semiconductor substrate using the resist pattern.

Abstract: Provided is a flowing-water sterilization system that includes a flow channel for passing seawater to be sterilized, and a light source emitting ultraviolet light to irradiate the seawater passing through the flow channel, wherein the light source includes a light-emitting diode that emits light not including infrared light. The light-emitting diode may emit ultraviolet light that has a wavelength of not less than 250 nm and not more than 350 nm and does not include light with a wavelength of not more than 200 nm. The system may further include a cooling unit for cooling the light source.

Abstract: A transparent film includes: a base material; and at least one scratch resistant layer of which indentation hardness is 300 MPa or greater and of which a thickness is 50 to 1,000 nm on an outermost surface of the transparent film at one side or both sides of the base material, and a number of times of folding endurance of the transparent film measured by an MIT testing machine according to JIS P8115 (2001) is 1,000 times or greater.

Abstract: An electricity storage device is provided with a heat transfer sheet which is arranged between an electricity storage body and a water jacket and which is capable of being elastically deformed. The water jacket has formed therein a fluid distribution section in communication with a cooling fluid inlet of the water jacket, a fluid recovery section in communication with a cooling fluid outlet of the water jacket, and a heat exchange section which connects the fluid distribution section and the fluid recovery section via a fluid passageway partitioned by fins rising in the thickness direction of the water jacket. The heat transfer sheet is arranged in an area which corresponds to the heat exchange section on the surface of a body section and which does not overlap the fluid distribution section and the fluid recovery section.

Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.

Abstract: A capacitor-type power supply unit including: a positive bus to which a plurality of capacitor is connected in parallel at each positive-electrode terminal thereof with maintaining equal intervals therebetween, and extends in a parallel direction; and an negative bus to which the plurality of capacitor is connected in parallel, at each negative-electrode terminal thereof with maintaining equal intervals therebetween, and extends in the parallel direction, in which the positive bus has a positive-electrode-side external connection part that is set at a position (SD) separated from the positive-electrode first end by a range of 20% to 30% of the total length in the longitudinal direction thereof, and the negative bus has an negative-electrode-side external connection part that is set at a position (SD) separated from the negative-electrode second end by a range of 20% to 30% of the total length in the longitudinal direction thereof.

Abstract: A fluid sterilization device includes: a flow passage tube having a first end and a second end opposite to the first end and defining a processing passage extending in an axial direction; a light source provided in a vicinity of the first end and radiating ultraviolet light from the first end toward the processing passage in the axial direction; and a housing that defines a straightening chamber encircling the first end from outside in a radial direction. The straightening chamber includes a communication port that serves as an inlet or an outlet for a fluid flowing in the processing passage, and communicates with the processing passage via a gap between the first end and an opposing member opposing the first end in the axial direction.

Abstract: A method of controlling a fuel cell system includes circulating a coolant through a fuel cell circulation passage in which a fuel cell and a gas liquid separator are provided. A valve is controlled selectively to connect or disconnect the fuel cell circulation passage and an air conditioning equipment circulation passage in which an air conditioning mechanism is provided. The valve is maintained to connect the fuel cell circulation passage and the air conditioning equipment circulation passage to circulate the coolant through the air conditioning equipment circulation passage when it is determined that the coolant includes air bubbles more than or equal to the threshold amount, when the valve connects the fuel cell circulation passage and the air conditioning equipment circulation passage, and when a temperature of the fuel cell is higher than or equal to a threshold temperature even if the air conditioning mechanism stops.

Abstract: A low-temperature startup method for a fuel cell, includes detecting a temperature of the fuel cell. It is determined whether the temperature is lower than a threshold temperature. A drying operation to dry the fuel cell is increased when the temperature is determined to be lower than the threshold temperature upon starting the fuel cell to generate electric power via an electrochemical reaction between fuel gas and oxidant gas.

Abstract: A resistance welding method according to the present invention includes a current control step of sequentially performing a first control for maintaining a welding current being a direct current at a current value I1 (first target value) or in the vicinity of the current value I1, a second control for raising the welding current from the current value I1 to a current value I2 (second target value, I2>I1) and for subsequently maintaining the welding current at the current value I2 or in the vicinity of the current value I2, and a third control for lowering the welding current from the current value I2 to a value smaller than the current value I1, and the resistance welding method further comprises an energization step of applying the welding current while repeating the current control step plural times until a predetermined energization period of time elapses.

Abstract: A method for controlling a fuel cell system includes supplying an oxidant gas, via an oxidant gas supply channel, to a cathode electrode of a fuel cell. The oxidant gas is moistened to be supplied to the cathode electrode with a humidifier. An opening degree of a bypass channel valve is decreased via a feedforward control to a first opening degree when an impedance has reached a lower limit value. The opening degree of the bypass channel valve is increased via the feedforward control to a second opening degree when the impedance has reached an upper limit value. The first opening degree is smaller than the second opening degree.

Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.

Abstract: The present invention provides a shutter device for a vehicle in which a manufacturing cost is reduced. Provided is a shutter device (1) for a vehicle, which has: a frame member (10) that has an opening provided therein and is mounted on the vehicle; a fin (20) that extends in a first direction; and a rotary shaft unit (40) that pivotably supports the fin (20) on the frame member to be pivotable in the opening of the frame (10). The fin (20) is provided integrally with or independently from the rotary shaft unit (40), and the fin (20) has a uniform sectional shape in the first direction.

Abstract: A capacitor-type power supply unit including: a positive bus to which a plurality of capacitor is connected in parallel at each positive-electrode terminal thereof with maintaining equal intervals therebetween, and extends in a parallel direction; and an negative bus to which the plurality of capacitor is connected in parallel, at each negative-electrode terminal thereof with maintaining equal intervals therebetween, and extends in the parallel direction, in which the positive bus has a positive-electrode-side external connection part that is set at a position (SD) separated from the positive-electrode first end by a range of 20% to 30% of the total length in the longitudinal direction thereof, and the negative bus has an negative-electrode-side external connection part that is set at a position (SD) separated from the negative-electrode second end by a range of 20% to 30% of the total length in the longitudinal direction thereof.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor substrate having a first wiring electrode on a first surface thereof, a first protective layer on the semiconductor substrate, having an opening therethrough at the location of first wiring electrode, a first bump electrode in the opening of the first protective layer, the first bump electrode including a base overlying the wiring electrode and an opposed bump receiving surface, and a first bump comprising a bump diameter of 30 ?m or less connected to the first bump electrode. The width of the base of the first bump electrode within the opening is equal to or less than 1.5 times the thickness of the first protective layer.

Abstract: To provide a semiconductor circuit capable of slightly generating inductance in two facing bus bars. Provided with a semiconductor circuit in which a collector-side bus bar 46 and an emitter-side bus bar 41 are arranged in parallel in a state of being isolated from each other and are fitted in a fixed manner to each other, and a inductance generation portion 411 is provided in one or both of the collector-side bus bar 46 and the emitter-side bus bar 41, the inductance generation portion 411 generating a difference in inductance between the collector-side bus bar 46 and the emitter-side bus bar 41.

Abstract: A through electrode and a multilayer wiring are provided on a semiconductor substrate, and a bottom layer connection wiring, a lower layer connection wiring, an upper layer connection wiring, and a top layer connection wiring are provided in the multilayer wiring. The through electrode is connected to the bottom layer connection wiring, and a via is arranged at a position other than a position immediately above the through electrode.