Abstract: The invention provides a laminated body having an excellent adhesive force with respect to a low-polarity metal member in the presence of hot water. The laminated body contains a resin substrate; an easily adhesive layer provided on at least one surface of the resin substrate; and an adhesive resin layer provided on a surface of the easily adhesive layer on a side opposite to the resin substrate, wherein the adhesive resin layer contains a polyolefin having at least one group selected from the group consisting of an acidic group and an acid anhydride group and having an acid value of 0.01 mgKOH/g to 6.5 mgKOH/g; and the laminated body is used for bonding a metal member having a ratio of a dipole term in surface free energy of 0.01% to 5.0%.

Abstract: An object of the present invention is to provide an adhesive composition having an excellent adhesive force even in the presence of hot water in an assembly in which at least one of two or more members to be bonded to each other via the adhesive composition is a low-polarity metal member, and an adhesion method. The present invention relates to an adhesive composition and an adhesion method for bonding a metal member. The adhesive composition contains a polyolefin (A) component having an acidic group and/or an acid anhydride group and having an acid value of 0.01 mgKOH/g to 6.5 mgKOH/g. The metal member has a ratio of a dipole term in surface free energy of 0.01% to 5.0%.

Abstract: A fuel cell includes sensors. Each sensor includes: a sensor portion provided on at least one of separators, a frame member, and an electrolyte membrane; and a wiring portion connected to the sensor portion and extending to an outer peripheral portion of one of the separators or an outer peripheral portion of a membrane electrode assembly. The sensor further includes a base insulating film covering a sensor arrangement region; wiring patterns laminated on the base insulating film; and a covering insulating film covering the wiring patterns and portions of the base insulating film not covered with the wiring patterns.

Abstract: According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

Abstract: Provided is a spot welding method capable of reliably welding a metal sheet laminate while suppressing occurrence of expulsion. In the spot welding method, a pulse current is applied in a first current application step and a second current application step by a DC chopping control method. In the DC chopping control method, a pulse waveform of the pulse current is generated by switching between current application and current application stop to a pair of electrodes 12 and 22 by a current switch 28, a peak current value of the pulse current in the first current application step is set to a value A1 equal to that of the pulse current in the second current application step, and a power of the pulse current in the first current application step is set to a value larger than that of the pulse current in the second current application step.

Abstract: To provide a differentiation marker gene set which, in the differentiation or classification of a breast cancer subtype, can perform differentiation or classification with high reproducibility by gene expression analysis. The above-described problem is solved by a differentiation marker gene set for differentiating or classifying a subtype of breast cancer. The differentiation marker gene set comprises a combination of genes obtained by selecting at least one gene from each gene group of at least one gene group selected from gene groups composed of groups a to o, the at least one gene group being selected in accordance with a desired subtype to be differentiated or classified.

Abstract: An object of the present invention is to provide a novel internal standard gene for gene expression analysis and to provide a gene expression analysis method using the internal standard gene. The present invention provides a gene expression analysis method for a test sample, comprising the steps of: (a) measuring an expression level of a desired gene; (b) measuring at least one internal standard gene selected from the group consisting of ABCF3, FBXW5, MLLT1, FAM234A, PITPNM1, WDR1, NDUFS7, and AP2A1; and (c) comparing the expression level of the desired gene with the expression level of the internal standard gene.

Abstract: This fungicide for agricultural and horticultural use includes a compound represented by formula (I) (in the formula, X represents a halogen group, or the like; n represents any integer of 0 to 4; when n is 2 or more, X may be the same or different; L represents a single bond or a substituted or unsubstituted C1-6 alkylene group; Q is a group represented by formula (Q-1) or formula (Q-2) (in the formulae, * represents a binding site; Y1 is N or CR1; Y2 is N or CR2; Y3 is N or CR3; Y4 is N or CR4, at least two of Y1 to Y4 are not nitrogen atoms; R1, R2, R3, and R4, each independently represent a hydrogen atom, a substituted or unsubstituted C1-6 alkyl group, or the like; R represents a substituted or unsubstituted C1-6 alkyl group or the like; G represents a substituted or unsubstituted C1-6 alkylene group; T represents a substituted or unsubstituted C1-6 alkylene group; Y5 is N or CH)) or a salt thereof.

Abstract: A compound of formula (I) (in the formula (I), R1 represents a substituted or unsubstituted C1-6 alkyl group or the like, R2 represents a substituted or unsubstituted 5- or 6-membered heteroaryl group, R3 represents a substituted or unsubstituted C1-6 alkyl group, a substituted or unsubstituted C1-6 alkoxycarbonyl group or the like, Y represents an oxygen atom or NH, A1 represents a sulfur atom, an oxygen atom, or NR4, R4 represents a C1-6 alkyl group, A2 is a carbon atom or a nitrogen atom, X represents a substituent, n represents the chemically acceptable number of X, and is an integer of 0 to 3, and, when n is 2 or more, X may be identical to or different from each other), or a salt thereof is provided.

Abstract: Provided is a spot welding method by which welding can be successfully performed while inhibiting occurrence of expulsion. First to third metal plates W1 to W3 were welded in which ratio of total thickness to thickness of the first metal plate W1 is 7. In Example 1, peak current value A1 is 14.6 kA, effective current value A2 is 7.8 kA, peak duration T1 is 0 ms, and no-peak duration T2 is 5.9 ms. As a result, in Example 1, lower limit current value A3 is 6.9 kA, upper limit current value A4 is 8.42 kA, difference A5 between upper limit current value A4 and lower limit current value A3 is 1.52 kA, peak duration T1/no-peak duration T2 is 0, effective current value A2/peak current value A1 is 0.53, and rising time T3/falling time T4 is 0.79, furthermore, no expulsion occurs, and welding result was determined to be OK.

Abstract: According to one embodiment, a semiconductor storage device includes a first chip and a second chip. The first chip includes a first substrate, a transistor, and a first pad. The second chip includes a second pad, a memory cell array, and a second substrate. The second pad is on the first pad. The second chip is bonded to the first chip. The first chip and the second chip includes, when viewed in a first direction orthogonal to the first substrate, a first region and a second region. The first region includes the memory cell array. The second region surrounds an area around the first region and includes a wall extending from the first substrate to the second substrate. The second substrate includes a first opening passing through the second substrate in the second region.

Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.

Abstract: A disc brake including: a piston; a cylinder including a bore portion, which movably accommodates the piston, and a step portion formed on an opening end side of the bore portion; and a piston boot arranged between a tip side of the piston and a small diameter step portion of the cylinder. The piston boot includes: a large diameter annular fitting portion containing an annular metal member so as to be fitted to the small diameter step portion; a bellows portion, which extends from the large diameter fitting portion, is increased in its diameter from the large diameter fitting portion to an outer peripheral side, and is also deformed and extended from the large diameter fitting portion toward an inner peripheral side; and a small diameter fitting portion formed at an end portion of the bellows portion so as to fit to an outer periphery of the piston.

Abstract: Display performance can be improved by reducing light leak in an oblique direction at the time of black display while increasing front brightness.

Abstract: To manufacture a sprue-bush which is capable of suitably cooling a melt raw resin in a raw resin-flow path as a whole, there is provided a method for manufacturing a sprue-bush, wherein a shaped part is located on a base part to manufacture the sprue-bush, the base part comprising a raw resin-flow path and a cooling medium-flow path, wherein, in the shaped part, a downstream raw resin-flow path portion is located and a downstream cooling medium-flow path portion is also located, the downstream raw resin-flow path portion corresponding to a downstream side region of a raw resin-flow path of the sprue-bush, the downstream cooling medium-flow path portion being positioned around the downstream raw resin-flow path portion and corresponding to a downstream side region of a cooling medium-flow path of the sprue-bush, and wherein the downstream cooling medium-flow path portion is located to surround the downstream raw resin-flow path portion.

Abstract: This fungicide for agricultural and horticultural use includes a compound represented by formula (I) (in the formula, X represents a halogen group, or the like; n represents any integer of 0 to 4; when n is 2 or more, X may be the same or different; L represents a single bond or a substituted or unsubstituted C1-6 alkylene group; Q is a group represented by formula (Q-1) or formula (Q-2) (in the formulae, * represents a binding site; Y1 is N or CR1; Y2 is N or CR2; Y3 is N or CR3; Y4 is N or CR4, at least two of Y1 to Y4 are not nitrogen atoms; R1, R2, R3, and R4, each independently represent a hydrogen atom, a substituted or unsubstituted C1-6 alkyl group, or the like; R represents a substituted or unsubstituted C1-6 alkyl group or the like; G represents a substituted or unsubstituted C1-6 alkylene group; T represents a substituted or unsubstituted C1-6 alkylene group; Y5 is N or CH)) or a salt thereof.

Abstract: According to an embodiment, a control system includes a fuel cell configured to generate electric power using an anode and a cathode, a power storage device capable of storing the electric power generated by the fuel cell, auxiliary equipment to which the electric power is able to be supplied, and a controller configured to control operations of the fuel cell and the auxiliary equipment. The controller performs control so that the electric power is consumed by the auxiliary equipment in accordance with a power storage state of the power storage device at the time of power generation of the fuel cell and adjusts one or both of a timing and a degree at which electric power to be consumed by the auxiliary equipment is limited on the basis of temperature information associated with the auxiliary equipment.

Abstract: A sharing system includes a sharing device arranged in a shared subject and a valet key that is allowed to operate the shared subject. The sharing system further includes a portable terminal that obtains key information required to use the shared subject and is allowed to operate the shared subject when the key information is authenticated through communication with the sharing device. The sharing system further includes a privilege granting unit that grants privilege to operate the shared subject from the portable terminal to the valet key, and a restriction imposing unit that imposes a restriction on use of the portable terminal when the operation privilege for the shared subject is granted from the portable terminal to the valet key.

Abstract: Provided is a water treatment apparatus that can uniformly irradiate water to be treated with ultraviolet light in sufficient irradiation quantity and in which a cleaning device and the like can be mounted easily. A water treatment apparatus that subjects water to be treated to ultraviolet treatment using ultraviolet light, the water treatment apparatus comprises: a flow channel through which water to be treated flows; and an ultraviolet irradiation portion that is located on an opposite side of the flow channel from an inlet side, and irradiates the water to be treated flowing in the flow channel with ultraviolet light via a window portion toward the inlet side, the window portion being formed by a transparent member, wherein the flow channel includes a diameter increase portion, and the diameter increase portion is provided with at least one of: a cleaning device used to clean the window portion; and a sensor.

Abstract: A semiconductor substrate includes a gallium oxide-based semiconductor single crystal and a chamfered portion at an outer periphery portion. The chamfered portion includes a first inclined surface located on the outer side of a first principal surface of the semiconductor substrate and being linear at an edge in a vertical cross section of the semiconductor substrate, a second inclined surface located on the outer side of a second principal surface on the opposite side to the first principal surface and being linear at an edge in the vertical cross section, and an end face located between the first inclined surface and the second inclined surface at a leading end of the chamfered portion. A width of the end face in a thickness direction of the semiconductor substrate is within the range of not less than 50% and not more than 97% of a thickness of the semiconductor substrate.