Abstract: A charging current setting method includes an upper limit temperature recognition step which recognizes an upper limit temperature of the secondary battery (11), an actual temperature recognition step which recognizes an actual temperature of the secondary battery (11), a maximum power recognition step which recognizes an maximum power according to a heat quantity which the secondary battery (11) allows during a charge period based on a difference between the upper limit temperature and the actual temperature, a thermal resistance of the secondary battery (11), and a length of a predetermined period and the charge period, and a current setting step which sets a charge current to be an upper limit value or less by recognizing the upper limit value of the charge current of the secondary battery (11) based on an endothermic and exothermic characteristics map of the secondary battery (11) with respect to current and the maximum power.

Abstract: Phytopathogenic filamentous fungi other than oomycete microorganisms are controlled using at least one compound selected from among tetrazoyloxime derivatives represented by formula (I) and salts thereof. In formula (I), X represents a C1 to C6 alkyl group or the like, n represents an integer of 0 to 5, Y represents a C1 to C6 alkyl group, Z represents a hydrogen atom or an amino group or the like, Q represents a hydrogen atom or a C1 to C8 alkyl group or the like, R represents a halogeno group or a C1 to C6 alkoxy group, and m represents an integer of 0 to 3.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A semiconductor device includes a substrate, a first electrode located on an upper surface of the substrate, and a second electrode located on a lower surface of the substrate and electrically connected to the first electrode. The semiconductor device further includes a first resist layer located on the upper surface of the substrate so as to surround the first electrode and spaced from the first electrode, and a second resist layer located on the lower surface of the substrate.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped ?-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the ?-Ga2O3-based single crystal, a shoulder of the ?-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

Abstract: A vehicular shutter device includes: a frame portion; a fin main body that is pivotably supported inside the frame portion to be pivotable around a pivot shaft portion; and a driving mechanism that pivots the fin main body between a fully open state and a fully closed state. The pivot shaft portion is provided to one of the frame portion and the fin main body, a shaft receiving portion is provided to an other of the frame portion and the fin main body to pivotably support the pivot shaft portion, one of the pivot shaft portion and the shaft receiving portion is provided at a position offset from the fin main body having a plate shape, and the pivot shaft portion and the shaft receiving portion are located at both ends and an intermediate part, in the horizontal direction of the fin main body.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A scoring machine incorporated in a sheet folding apparatus forms scores on sheets according to a folding pattern. The scoring machine comprises upper and lower rotary shafts provided with pairs of convex and concave rollers, and a positioning unit slidably attached to a slide guide. When a rotatable member is arranged at a standing position, the convex roller engages with a groove on one end face of the rotatable member, or the concave roller engages with a projection on the other end face of the rotatable member. A sequence pattern of the pairs of convex and concave rollers on the upper and lower rotary shafts corresponding to the folding pattern is displayed on a display. The positioning unit stops at the specified positions of the pairs of convex and concave rollers while sliding.

Abstract: A charging current setting method includes an upper limit temperature recognition step which recognizes an upper limit temperature of the secondary battery (11), an actual temperature recognition step which recognizes an actual temperature of the secondary battery (11), a maximum power recognition step which recognizes an maximum power according to a heat quantity which the secondary battery (11) allows during a charge period based on a difference between the upper limit temperature and the actual temperature, a thermal resistance of the secondary battery (11), and a length of a predetermined period and the charge period, and a current setting step which sets a charge current to be an upper limit value or less by recognizing the upper limit value of the charge current of the secondary battery (11) based on an endothermic and exothermic characteristics map of the secondary battery (11) with respect to current and the maximum power.

Abstract: A planar lightwave circuit and an optical receiver which reduce degradation in signal quality is provided.

Abstract: In a semiconductor device manufacturing method, on a film to be processed, a mask material film is formed which has pattern openings for a plurality of contact patterns and connection openings for connecting adjacent pattern openings in such a manner that the connection between them is constricted in the middle. Then, a sidewall film is formed on the sidewalls of the individual openings in the mask material film, thereby not only making the diameter of the pattern openings smaller but also separating adjacent pattern openings. Then, the film to be processed is selectively etched with the mask material film and sidewall film as a mask, thereby making contact holes.

Abstract: The present invention provides a construction material preservative for wood and the like that retains preservative effects over a long period of time and continuously demonstrates those effects even at low concentrations even when using in combination with an insecticide. The construction material preservative contains a water-soluble silver-amino acid complex composed of 1 molar part of silver and 1 to 3 molar parts of amino acid.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device comprises forming through holes extending through a semiconductor substrate in a thickness direction to integrated circuits in chip areas, and forming a first mark opening and second mark openings in a dicing line. The method detects the first mark opening based on positions of the second mark openings. Then, the method performs alignment of exposure positions based on the position of the first mark opening to perform photolithography, thereby forming a resist pattern on the back side of the semiconductor substrate.

Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.

Abstract: A humidification control method includes the steps of detecting a direct current resistance component by measuring impedance during power generation of a fuel cell stack, calculating a reaction resistance component based on the detected direct current resistance component and a stack voltage, detecting a humidified state of the fuel cell stack based on the detected direct current resistance component and the calculated reaction resistance component, and adjusting a quantity of humidification of a reaction gas supplied to the fuel cell stack based on the detected humidified state of the fuel cell stack.

Abstract: A vehicle lower structure includes a plurality of spat body portions and a guide portion. The spat body portions are provided side by side in a vehicle longitudinal direction on a vehicle front side of a wheel, are protruded from an underfloor of the vehicle toward a vehicle lower side, and extend in a vehicle width direction. The guide portion constitutes vehicle-width-direction outer regions of the spat body portions in at least one of second and subsequent rows from a vehicle rear side, is inclined toward the vehicle rear side and outward in the vehicle width direction to guide a traveling wind, and has a vehicle-width-direction outer end that is arranged more outward in the vehicle width direction than a vehicle-width-direction outer end of the spat body portion that is adjacent to the vehicle rear side.

Abstract: A ?-Ga2O3-based single crystal substrate includes a ?-Ga2O3-based single crystal. The ?-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

Abstract: In a method of operating a fuel cell, a voltage difference between voltages of a first unit cell and a second unit cell is detected. Whether the voltage difference is out of a predetermined range is determined. If the voltage difference is determined to be out of the predetermined range, humidity of a first reactant gas before being supplied to a first reactant gas passage is adjusted or humidity of a second reactant gas before being supplied to a second reactant gas passage is adjusted. The first reactant gas passage is provided in a first separator. The first reactant gas is to be supplied to one of first electrodes through the first reactant gas passage. The second reactant gas is to be supplied to another of the first electrodes through the second reactant gas passage.

Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.