Patents by Inventor Shoji Akiyama

Shoji Akiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11346018
    Abstract: A silicon carbide substrate production method includes: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1. The silicon carbide substrate has a smooth surface and reduced internal stress.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: May 31, 2022
    Assignees: Shin-Etsu Chemical Co., Ltd., CUSIC Inc.
    Inventors: Hiroyuki Nagasawa, Yoshihiro Kubota, Shoji Akiyama
  • Patent number: 11338259
    Abstract: The present technology provides a technology that liquid in round-bottom vessels is efficiently agitated. There is provided a vessel rack at least including a holder having a plurality of through-holes into which round-bottom vessels each having a closed-bottom tube shape are inserted, and a support having a plurality of supporting holes that are arranged facing to the through-holes and support bottoms of the round-bottom vessels, the bottoms of the supporting holes each having a bulge such that liquid in the round-bottom vessels forms a vortex at a time of agitation of the liquid. Also, there is provided an agitator of agitating liquid in round-bottom vessels at least including the vessel rack, a mounting unit that mounts the vessel rack, and a rocking unit that rocks the mounting unit, and the like.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: May 24, 2022
    Assignee: SONY CORPORATION
    Inventors: Shoji Akiyama, Takeshi Yamasaki, Shinichi Hasegawa, Makoto Sato
  • Publication number: 20220118444
    Abstract: A microchip is provided, which includes a substrate including a fluid channel structure. The fluid channel structure includes a first fluid introduction channel and a second fluid introduction channel configured to meet so as to allow merging of a first fluid introduced from the first fluid introduction channel and a second fluid introduced from the second fluid introduction channel. A tapered portion is configured to be positioned after merging the first fluid and the second fluid so as to suppress a spiral flow field generated after the merging.
    Type: Application
    Filed: December 28, 2021
    Publication date: April 21, 2022
    Inventors: Tatsumi ITO, Shoji AKIYAMA, Masaya KAKUTA, Takeshi YAMASAKI
  • Patent number: 11245377
    Abstract: A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: February 8, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shoji Akiyama, Masayuki Tanno
  • Patent number: 11229907
    Abstract: A microchip is provided, which includes a substrate including a fluid channel structure. The fluid channel structure includes a first fluid introduction channel and a second fluid introduction channel configured to meet so as to allow merging of a first fluid introduced from the first fluid introduction channel and a second fluid introduced from the second fluid introduction channel. A tapered portion is configured to be positioned after merging the first fluid and the second fluid so as to suppress a spiral flow field generated after the merging.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: January 25, 2022
    Assignee: Sony Corporation
    Inventors: Tatsumi Ito, Shoji Akiyama, Masaya Kakuta, Takeshi Yamasaki
  • Patent number: 11208719
    Abstract: Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: December 28, 2021
    Assignees: SHIN-ETSU CHEMICAL CO., LTD., CUSIC INC.
    Inventors: Yoshihiro Kubota, Shoji Akiyama, Hiroyuki Nagasawa
  • Patent number: 11195987
    Abstract: A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: December 7, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shoji Akiyama, Makoto Kawai
  • Publication number: 20210359660
    Abstract: A piezoelectric composite substrate for SAW devices with small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intervening layer between the piezoelectric single crystal thin film and the support substrate. In said composite substrate, the first intervening layer is in contact with the piezoelectric single crystal thin film, and the acoustic velocity of the transverse wave in the first intervening layer is faster than the acoustic velocity of the fast transverse wave in the piezoelectric single crystal thin film.
    Type: Application
    Filed: May 5, 2021
    Publication date: November 18, 2021
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayuki TANNO, Shoji AKIYAMA
  • Patent number: 11177123
    Abstract: A compound semiconductor laminate substrate comprising two single-crystalline compound semiconductor substrates directly bonded together and laminated, the single-crystalline compound semiconductor substrates having the same composition including A and B as constituent elements and having the same atomic arrangement, characterized in that the front and back surfaces of the laminate substrate are polar faces comprising the same kind of atoms of A or B, and that a laminate interface comprises a bond of atoms of either B or A and is a unipolar anti-phase region boundary plane in which the crystal lattices of the atoms are matched. In this way, the polar faces of the front and rear surfaces of the compound semiconductor laminate substrate are made monopolar, thereby facilitating semiconductor element process designing, and making it possible to manufacture a low-cost, high-performance, and stable semiconductor element without implementing complex substrate processing.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: November 16, 2021
    Assignees: SHIN-ETSU CHEMICAL CO., LTD., CUSIC INC.
    Inventors: Hiroyuki Nagasawa, Yoshihiro Kubota, Shoji Akiyama
  • Publication number: 20210328571
    Abstract: A composite substrate with suppressed pyroelectricity increase due to the heat-treatment process is provided. The composite substrate has an oxide single crystal thin film, which is a single crystal thin film of a piezoelectric material, a support substrate, and a diffusion prevention layer that is provided between the oxide single crystal thin film and the support substrate to prevent the diffusion of oxygen. The diffusion prevention layer may have any of silicon oxynitride, silicon nitride, silicon oxide, magnesium oxide, spinel, titanium nitride, tantalum, tantalum nitride, tungsten nitride, aluminum oxide, silicon carbide, tungsten boron nitride, titanium silicon nitride, and tungsten silicon nitride.
    Type: Application
    Filed: August 1, 2019
    Publication date: October 21, 2021
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventor: Shoji AKIYAMA
  • Patent number: 11128277
    Abstract: To provide a method for producing a composite wafer capable of reducing a spurious arising by reflection of an incident signal on a joint interface between a lithium tantalate film and a supporting substrate, in the composite wafer including a supporting substrate having a low coefficient of thermal expansion, and a lithium tantalate film having a high coefficient of thermal expansion stacked on the supporting substrate. The method for producing a composite wafer is a method for producing a composite wafer that produces a composite wafer by bonding a lithium tantalate wafer having a high coefficient of thermal expansion to a supporting wafer having a low coefficient of thermal expansion, wherein prior to bonding together, ions are implanted from a bonding surface of the lithium tantalate wafer and/or the supporting wafer, to disturb crystallinity near the respective bonding surfaces.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: September 21, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shoji Akiyama, Masayuki Tanno, Koji Kato
  • Patent number: 11112345
    Abstract: Provided is a microparticle measurement device including a light emission unit that emits light to a microparticle to be analyzed and a light detection unit that detects light generated from the microparticle at a predetermined detection position. The microparticle measurement device further includes an analysis unit that is connected to the light detection unit and analyzes a detection value of the light detected by the light detection unit. The light detection unit is movable from the detection position.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: September 7, 2021
    Assignee: SONY CORPORATION
    Inventors: Yoshitsugu Sakai, Masaaki Abe, Koichi Tsukihara, Shoji Akiyama, Shinichi Hasegawa
  • Patent number: 10971674
    Abstract: A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof, subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and applying a mechanical impact to the ion-implanted layer of the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: April 6, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shoji Akiyama, Makoto Kawai
  • Patent number: 10886890
    Abstract: Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength ? of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.
    Type: Grant
    Filed: July 4, 2017
    Date of Patent: January 5, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shoji Akiyama, Masayuki Tanno, Shozo Shirai
  • Publication number: 20200412326
    Abstract: A composite substrate for surface acoustic wave devices with improved characteristics is provided. The composite substrate for a surface acoustic wave device according to the present invention is configured to include a piezoelectric single crystal substrate and a supporting substrate. An intervening layer is provided between the piezoelectric single crystal substrate and the supporting substrate, the amount of chemisorbed water in the intervening layer is 1×1020 molecules/cm3 or less. At the bonding interface between the piezoelectric single crystal substrate and the supporting substrate, at least one of the piezoelectric single crystal substrate and the supporting substrate may have an uneven structure. It is preferable that the ratio of the average length RSm of the element in the sectional curve of the uneven structure and the wavelength ? of the surface acoustic wave when used as a surface acoustic wave device is 0.2 or more and 7.0 or less.
    Type: Application
    Filed: June 23, 2020
    Publication date: December 31, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayuki TANNO, Shoji AKIYAMA
  • Patent number: 10829868
    Abstract: A manufacturing method of an SiC composite substrate 10 that includes a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After manufacturing a single crystal SiC layer supporting body 14 by providing the single crystal SiC layer 12 on one surface of a holding substrate 21 including Si. A polycrystalline SiC is deposited on the single crystal SiC layer 12 through chemical vapor deposition to manufacture an SiC laminated body 15 laminated with the single crystal SiC layer 12 and the polycrystalline SiC layer 11 having a thickness t on the holding substrate 21?. At the same time, the single crystal SiC layer supporting body 14 is heated at a temperature less than 1,414 degrees Celsius, and a portion of the thickness t of the polycrystalline SiC is deposited. Then, the holding substrate 21? is physically and/or chemically removed.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: November 10, 2020
    Assignees: SHIN-ETSU CHEMICAL CO., LTD., CUSIC INC.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Hiroyuki Nagasawa
  • Publication number: 20200338550
    Abstract: A microchip is provided, which includes a substrate including a fluid channel structure. The fluid channel structure includes a first fluid introduction channel and a second fluid introduction channel configured to meet so as to allow merging of a first fluid introduced from the first fluid introduction channel and a second fluid introduced from the second fluid introduction channel. A tapered portion is configured to be positioned after merging the first fluid and the second fluid so as to suppress a spiral flow field generated after the merging.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Inventors: Tatsumi ITO, Shoji AKIYAMA, Masaya KAKUTA, Takeshi YAMASAKI
  • Publication number: 20200319081
    Abstract: The present technology is mainly directed to providing a technology capable of reducing contamination risk. To achieve the object, in the present technology, provided is a microparticle measurement device including at least: a light emission unit that emits light to a microparticle to be analyzed; a light detection unit that detects light generated from the microparticle at a predetermined detection position; and an analysis unit that is connected to the light detection unit and analyzes a detection value of the light detected by the light detection unit, in which the light detection unit is movable from the detection position.
    Type: Application
    Filed: March 7, 2017
    Publication date: October 8, 2020
    Inventors: YOSHITSUGU SAKAI, MASAAKI ABE, KOICHI TSUKIHARA, SHOJI AKIYAMA, SHINICHI HASEGAWA
  • Patent number: 10781104
    Abstract: Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1?m or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1?m or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: September 22, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Makoto Kawai, Shigeru Konishi, Hiroshi Mogi
  • Patent number: D907242
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: January 5, 2021
    Assignee: SONY CORPORATION
    Inventors: Masataka Shinoda, Shoji Akiyama, Masaya Kakuta, Takeshi Yamasaki, Tatsumi Ito, Yuji Akiyama, Gakuji Hashimoto, Hiroto Kasai