Abstract: A composite substrate that is obtained by bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding.

Abstract: A method for manufacturing a composite substrate includes: forming a first intermediate layer including thermally synthesized silica on a surface of a support substrate; forming a second intermediate layer including an inorganic material on a surface of a piezoelectric single crystal substrate; flattening a surface of the second intermediate layer; and bonding a surface of the first intermediate layer to the flattened surface of the second intermediate layer.

Abstract: Provided are a manufacturing method for a composite wafer and a composite wafer obtained by using the manufacturing method, the manufacturing method including: preparing a first substrate in which a first layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; preparing a second substrate in which a second layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; forming a silicon layer on a surface of one of the first layer or the second layer; activating, with plasma, a surface of at least one of the silicon layer or another of the first layer or the second layer; and bonding the first substrate and the second substrate.

Abstract: To provide a method for producing a composite wafer including preparing a supporting substrate which is either lithium tantalate or lithium niobate and is substantially not polarized, preparing an active substrate which is either lithium tantalate or lithium niobate stuck on one surface side of the supporting substrate and is polarized, generating an interface by implanting an ion into the active substrate, sticking the supporting substrate and the active substrate, raising temperatures of the supporting substrate and the active substrate which are stuck to each other, and delaminating the active substrate at the interface. In addition, the composite wafer is provided.

Abstract: Manufacturing methods for a composite substrate for surface acoustic wave devices with improved characteristics is provided. The composite substrate for a surface acoustic wave device is configured to include a piezoelectric single crystal substrate and a supporting substrate. An intervening layer is provided between the piezoelectric single crystal substrate and the supporting substrate, the amount of chemisorbed water in the intervening layer is 1×1020 molecules/cm3 or less. At the bonding interface between the piezoelectric single crystal substrate and the supporting substrate, at least one of the piezoelectric single crystal substrate and the supporting substrate may have an uneven structure. It is preferable that the ratio of the average length RSm of the element in the sectional curve of the uneven structure and the wavelength ? of the surface acoustic wave when used as a surface acoustic wave device is 0.2 or more and 7.0 or less.

Abstract: A method of manufacturing a composite substrate that includes bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

Abstract: There are provided a method for manufacturing a substrate excellent in heat dissipation with a small loss in radio frequencies with no need of a high temperature process in which a metal impurity is diffused, and a substrate of high thermal conductivity. A composite substrate according to the present invention is a composite substrate having a piezoelectric single crystal substrate, a support substrate, and an intermediate layer provided between the piezoelectric single crystal substrate and the support substrate. The intermediate layer is a film formed of an inorganic material, and at least a part of the film is thermally synthesized silica. The intermediate layer may be separated into at least two layers along the bonding surface of the composite substrate. The first intermediate layer in contact with the support substrate may be a layer including thermally synthesized silica.

Abstract: Provided are a composite substrate in which a wafer to be bonded has a sufficiently small surface roughness and which can be prevented from causing film peeling, and a method for producing the composite substrate. The composite substrate 40 of the present invention has a silicon wafer 10, an interlayer 11, and a single-crystal silicon thin film or oxide single-crystal thin film 20a stacked in the order listed and has a damaged layer 12a in a portion of the silicon wafer 10 on the side of the interlayer 11.

Abstract: A composite substrate is resistant to the development of cracks, thereby not having deteriorating properties even when exposed to high-temperatures or low temperatures, and a method is provided for producing the composite substrate. The composite substrate 10 of the present invention has a supporting substrate 2, a stress relaxing interlayer 3, and an oxide single-crystal thin film 1 stacked in the listed order. The stress relaxing interlayer 3 has a thermal expansion coefficient between that of the supporting substrate 2 and that of the oxide single-crystal thin film 1.

Abstract: Provided is a composite substrate for surface acoustic wave device which does not cause peeling of an entire surface of a piezoelectric single crystal film even when heating the film to 400° C. or higher in a step after bonding. The composite substrate is formed by providing a piezoelectric single crystal substrate and a support substrate, forming a film made of an inorganic material on at least one of the piezoelectric single crystal substrate and the support substrate, and joining the piezoelectric single crystal substrate with the support substrate so as to sandwich the film made of the inorganic material.

Abstract: There is provided a microchip. The microchip comprises a substrate including a flow channel configured to convey a fluid therein. The substrate comprises a first substrate layer, a second substrate layer laminated to the first substrate layer to create the flow channel, and a discharge part formed in only one of the first substrate layer or the second substrate layer. The discharge part includes an opening directed toward an end face of the substrate, and being configured to eject the fluid flowing through the flow channel.

Abstract: A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

Abstract: A silicon carbide substrate production method includes: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1. The silicon carbide substrate has a smooth surface and reduced internal stress.

Abstract: The present technology provides a technology that liquid in round-bottom vessels is efficiently agitated. There is provided a vessel rack at least including a holder having a plurality of through-holes into which round-bottom vessels each having a closed-bottom tube shape are inserted, and a support having a plurality of supporting holes that are arranged facing to the through-holes and support bottoms of the round-bottom vessels, the bottoms of the supporting holes each having a bulge such that liquid in the round-bottom vessels forms a vortex at a time of agitation of the liquid. Also, there is provided an agitator of agitating liquid in round-bottom vessels at least including the vessel rack, a mounting unit that mounts the vessel rack, and a rocking unit that rocks the mounting unit, and the like.

Abstract: A microchip is provided, which includes a substrate including a fluid channel structure. The fluid channel structure includes a first fluid introduction channel and a second fluid introduction channel configured to meet so as to allow merging of a first fluid introduced from the first fluid introduction channel and a second fluid introduced from the second fluid introduction channel. A tapered portion is configured to be positioned after merging the first fluid and the second fluid so as to suppress a spiral flow field generated after the merging.

Abstract: A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.

Abstract: A microchip is provided, which includes a substrate including a fluid channel structure. The fluid channel structure includes a first fluid introduction channel and a second fluid introduction channel configured to meet so as to allow merging of a first fluid introduced from the first fluid introduction channel and a second fluid introduced from the second fluid introduction channel. A tapered portion is configured to be positioned after merging the first fluid and the second fluid so as to suppress a spiral flow field generated after the merging.

Abstract: Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

Abstract: A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.