Abstract: A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.

Abstract: Provided is a method for manufacturing an SiC composite substrate 10 having a single-crystal SiC layer 12 on a polycrystalline SiC substrate 11, wherein: the single-crystal SiC layer 12 is provided on one surface of a holding substrate 21 comprising Si, and a single-crystal SiC-layer carrier 14 is prepared; polycrystalline SiC is then accumulated on the single-crystal SiC layer 12 by a physical or chemical means, and an SiC laminate 15 is prepared in which the single-crystal SiC layer 12 and the polycrystalline SiC substrate 11 are laminated on the holding substrate 21; and the holding substrate 21 is then physically and/or chemically removed. With the present invention, an SiC composite substrate having a single-crystal. SiC layer with good crystallinity is obtained with a simple manufacturing process.

Abstract: A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate being obtained by, prior to a thermal oxidization treatment at a temperature exceeding 850° C., conducting an intermediate heat treatment at 650-850° C. and then conducting the thermal oxidization treatment at a temperature exceeding 850° C. According to the present invention, a thermally oxidized heterogeneous composite substrate with a reduced number of defects after thermal oxidization can be obtained.

Abstract: Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1?m or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1?m or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

Abstract: A manufacturing method of an SiC composite substrate 10 that includes a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After manufacturing a single crystal SiC layer supporting body 14 by providing the single crystal SiC layer 12 on one surface of a holding substrate 21 including Si. A polycrystalline SiC is deposited on the single crystal SiC layer 12 through chemical vapor deposition to manufacture an SiC laminated body 15 laminated with the single crystal SiC layer 12 and the polycrystalline SiC layer 11 having a thickness t on the holding substrate 21?. At the same time, the single crystal SiC layer supporting body 14 is heated at a temperature less than 1,414 degrees Celsius, and a portion of the thickness t of the polycrystalline SiC is deposited. Then, the holding substrate 21? is physically and/or chemically removed.

Abstract: Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

Abstract: Provided is a particle analyzer capable of suppressing mixture of other particles and analyzing particles with high accuracy. A sample liquid introducing member is disposed immediately below a flow cell of a particle analyzer in a manner movable in a forward direction and a reverse direction relative to a sample liquid introducing direction, and formed by integrating a suction nozzle adapted to suck sample liquid with a sample liquid introducing nozzle disposed inside an introducing unit of the flow cell and adapted to discharge the sucked sample liquid into the flow cell. Furthermore, a movement restriction mechanism adapted to restrict a moving amount of the sample liquid introducing member is provided.

Abstract: A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.

Abstract: A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof, subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and applying a mechanical impact to the ion-implanted layer of the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

Abstract: A composite wafer has an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, includes steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

Abstract: Provided is a composite wafer (c-wafer) having an oxide single-crystal film transferred onto a support wafer (s-wafer), the film being a lithium tantalate or lithium niobate film, and c-wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and s-wafer. More specifically, provided is a method of producing c-wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer (o-wafer) to form an ion-implanted layer inside thereof; subjecting at least one of the surface of o-wafer and a surface of s-wafer to surface activation; bonding the surfaces together to obtain a laminate; providing at least one of the surfaces of the laminate with a protection wafer having thermal expansion coefficient smaller than that of o-wafer; and heat-treating the laminate with the protection wafer at 80° C. or higher to split the laminate along the layer to obtain c-wafer.

Abstract: To provide a composite substrate whereby a nanocarbon film having no defect can be manufactured at low cost. A method for manufacturing a composite substrate, including: implanting ion from a surface of a single crystal silicon carbide substrate to form an ion-implanted region; bonding an ion-implanted surface of the single crystal silicon carbide substrate and a main surface of a handle substrate, and peeling the single crystal silicon carbide substrate at the ion-implanted region to transfer single crystal silicon carbide thin film onto the handle substrate, wherein the surface to be bonded of the single crystal silicon carbide substrate and the surface to be bonded of the handle substrate each has a surface roughness RMS of 1.00 nm or less.

Abstract: A hybrid substrate has an SOI structure having a good silicon active layer, without defects such as partial separation of the silicon active layer is obtained without trimming the outer periphery of the substrate. An SOI substrate is obtained by sequentially laminating a first silicon oxide film and a silicon active layer in this order on a silicon substrate. A terrace portion that does not have the silicon active layer is formed in the outer peripheral portion of the silicon substrate surface. A second silicon oxide film is formed on the silicon active layer surface of the SOI substrate The bonding surfaces of the SOI substrate and a supporting substrate that has a thermal expansion coefficient different from that of the SOI substrate is subjected to an activation treatment. The SOI substrate and the supporting substrate are bonded with the second silicon oxide film being interposed therebetween.

Abstract: There is provided a microchip including at least two substrates each comprising a thermoplastic resin, and at least one member comprising a material having a heat distortion temperature higher than a heat distortion temperature of the thermoplastic resin, the at least one member including at least one engagement end including a protrusion extending between the at least two substrates, wherein the at least one member is fixed to the at least two substrates by the protrusion being held between the at least two substrates by at least one wall surface that is thermally deformed by thermocompression.

Abstract: A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less.

Abstract: There is provided a composite structure including: at least two substrates which are made of thermoplastic resin and which are bonded by thermocompression; and at least one member which is made of a material whose heat distortion temperature is higher than a heat distortion temperature of the thermoplastic resin and which is inserted into a space formed in at least one of the substrates. The member inserted in the space is fixed and held by wall surfaces which form the space of the substrates and which are thermally deformed by thermocompression.

Abstract: Provided is a particle analyzer capable of suppressing mixture of other particles and analyzing particles with high accuracy. A sample liquid introducing member is disposed immediately below a flow cell of a particle analyzer in a manner movable in a forward direction and a reverse direction relative to a sample liquid introducing direction, and formed by integrating a suction nozzle adapted to suck sample liquid with a sample liquid introducing nozzle disposed inside an introducing unit of the flow cell and adapted to discharge the sucked sample liquid into the flow cell. Furthermore, a movement restriction mechanism adapted to restrict a moving amount of the sample liquid introducing member is provided.

Abstract: A chip device is provided. The chip device includes a flow channel configured to pass a fluid therein; an ejection portion including an opening toward an end face of a substrate layer including at least one layer, the ejection portion is configured to provide the fluid from the flow channel, and a cavity provided between the opening of the ejection portion and the end face of the substrate layer, wherein at least a portion of the cavity is provided at the end face of the substrate layer.

Abstract: There is provided a microchip including a flow channel, an ejection portion, and a cutout portion. The flow channel is configured to convey a fluid therein. The ejection portion includes an opening directed toward an end face of a substrate layer, and the ejection portion is configured to eject the fluid flowing through the flow channel to outside. The substrate layer is laminated to each other. The cutout portion is formed between the opening of the ejection portion and the end face of the substrate layer. The cutout portion has a larger diameter than that of the opening.