Abstract: A composite wafer includes an oxide single crystal thin film of lithium tantalate or lithium niobate transferred onto the entire face of a support wafer and is free from cracking or peeling on a bonding interface between the support wafer and the oxide single crystal thin film. A method for manufacturing a composite wafer at least includes a step of forming an ion-implanted layer in an oxide single crystal wafer, a step of subjecting at least one of the ion-implanted surface of the oxide single crystal wafer and a surface of a support wafer to a surface activation treatment, a step of bonding the ion-implanted surface of the oxide single crystal wafer to the surface of the support wafer to form a laminate, a step of subjecting the laminate to a first heat treatment at a temperature not less than 90° C.

Abstract: Provided is a method for manufacturing an SiC composite substrate 10 having a single-crystal SiC layer 12 on a polycrystalline SiC substrate 11, wherein: the single-crystal SiC layer 12 is provided on one surface of a holding substrate 21 comprising Si, and a single-crystal SiC-layer carrier 14 is prepared; polycrystalline SiC is then accumulated on the single-crystal SiC layer 12 by a physical or chemical means, and an SiC laminate 15 is prepared in which the single-crystal SiC layer 12 and the polycrystalline SiC substrate 11 are laminated on the holding substrate 21; and the holding substrate 21 is then physically and/or chemically removed. With the present invention, an SiC composite substrate having a single-crystal. SiC layer with good crystallinity is obtained with a simple manufacturing process.

Abstract: Provided is a composite substrate for a surface acoustic wave device in which a chip is hardly generated at an outer peripheral edge of an electric material layer and peeling is hardly generated from the outer peripheral edge. The composite substrate for a surface acoustic wave device is a composite substrate in which a piezoelectric material single crystal thin film and a supporting substrate are bonded at a bonding surface. The supporting substrate has a closed first contour line, the bonding surface has a closed second contour line, and the piezoelectric material single crystal thin film has a closed third contour line. When the first contour line and the third contour line are projected perpendicularly to a plane including the bonding surface, the projection image of the first contour line is located outside the second contour line, and the projection image of the third contour line is located inside the second contour line.

Abstract: There is provided a microchip. The microchip comprises a substrate including a flow channel configured to convey a fluid therein. The substrate comprises a first substrate layer, a second substrate layer laminated to the first substrate layer to create the flow channel, and a discharge part formed in only one of the first substrate layer or the second substrate layer. The discharge part includes an opening directed toward an end face of the substrate, and being configured to eject the fluid flowing through the flow channel.

Abstract: There are provided a method for manufacturing a substrate excellent in heat dissipation with a small loss in radio frequencies with no need of a high temperature process in which a metal impurity is diffused, and a substrate of high thermal conductivity. A composite substrate according to the present invention is a composite substrate having a piezoelectric single crystal substrate, a support substrate, and an intermediate layer provided between the piezoelectric single crystal substrate and the support substrate. The intermediate layer is a film formed of an inorganic material, and at least a part of the film is thermally synthesized silica. The intermediate layer may be separated into at least two layers along the bonding surface of the composite substrate. The first intermediate layer in contact with the support substrate may be a layer including thermally synthesized silica.

Abstract: An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

Abstract: The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties.

Abstract: A compound semiconductor laminate substrate comprising two single-crystalline compound semiconductor substrates directly bonded together and laminated, the single-crystalline compound semiconductor substrates having the same composition including A and B as constituent elements and having the same atomic arrangement, characterized in that the front and back surfaces of the laminate substrate are polar faces comprising the same kind of atoms of A or B, and that a laminate interface comprises a bond of atoms of either B or A and is a unipolar anti-phase region boundary plane in which the crystal lattices of the atoms are matched. In this way, the polar faces of the front and rear surfaces of the compound semiconductor laminate substrate are made monopolar, thereby facilitating semiconductor element process designing, and making it possible to manufacture a low-cost, high-performance, and stable semiconductor element without implementing complex substrate processing.

Abstract: A composite substrate capable of maintaining high resistance after processing at 300° C. and a method of manufacturing the composite substrate are provided. The composite substrate according to the present invention is manufactured by bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

Abstract: A silicon carbide substrate production method includes: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1. The silicon carbide substrate has a smooth surface and reduced internal stress.

Abstract: A method for producing a SiC composite substrate 10 having a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After the single crystal SiC layer 12 is provided on the front surface of a holding substrate 21 including Si and having a silicon oxide film 21a on the front and back surfaces thereof to produce a single crystal SiC layer supporting body 14, a part or all of the thickness of the silicon oxide film 21a on one area or all of the back surface of the holding substrate 21 in the single crystal SiC layer supporting body 14 is removed to impart warpage to the single crystal SiC layer supporting body 14?. Then, polycrystalline SiC is deposited on the single crystal SiC layer 12 by chemical vapor deposition to form the polycrystalline SiC substrate 11, and the holding substrate is physically and/or chemically removed.

Abstract: Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength ? of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.

Abstract: There is provided a microchip including at least two substrates each comprising a thermoplastic resin, and at least one member comprising a material having a heat distortion temperature higher than a heat distortion temperature of the thermoplastic resin, the at least one member including at least one engagement end including a protrusion extending between the at least two substrates, wherein the at least one member is fixed to the at least two substrates by the protrusion being held between the at least two substrates by at least one wall surface that is thermally deformed by thermocompression.

Abstract: Provided is a composite substrate for surface acoustic wave device which does not cause peeling of an entire surface of a piezoelectric single crystal film even when heating the film to 400° C. or higher in a step after bonding. The composite substrate is formed by providing a piezoelectric single crystal substrate and a support substrate, forming a film made of an inorganic material on at least one of the piezoelectric single crystal substrate and the support substrate, and joining the piezoelectric single crystal substrate with the support substrate so as to sandwich the film made of the inorganic material.

Abstract: A chip device is provided. The chip device includes a flow channel configured to pass a fluid therein; an ejection portion including an opening toward an end face of a substrate layer including at least one layer, the ejection portion is configured to provide the fluid from the flow channel, and a cavity provided between the opening of the ejection portion and the end face of the substrate layer, wherein at least a portion of the cavity is provided at the end face of the substrate layer.

Abstract: A method for producing a SiC composite substrate 10 having a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After the single crystal SiC layer 12 is provided on the front surface of a holding substrate 21 including Si and having a silicon oxide film 21a on the front and back surfaces thereof to produce a single crystal SiC layer supporting body 14, a part or all of the thickness of the silicon oxide film 21a on one area or all of the back surface of the holding substrate 21 in the single crystal SiC layer supporting body 14 is removed to impart warpage to the single crystal SiC layer supporting body 14?. Then, polycrystalline SiC is deposited on the single crystal SiC layer 12 by chemical vapor deposition to form the polycrystalline SiC substrate 11, and the holding substrate is physically and/or chemically removed.

Abstract: To provide a method for producing a composite wafer capable of reducing a spurious arising by reflection of an incident signal on a joint interface between a lithium tantalate film and a supporting substrate, in the composite wafer including a supporting substrate having a low coefficient of thermal expansion, and a lithium tantalate film having a high coefficient of thermal expansion stacked on the supporting substrate. The method for producing a composite wafer is a method for producing a composite wafer that produces a composite wafer by bonding a lithium tantalate wafer having a high coefficient of thermal expansion to a supporting wafer having a low coefficient of thermal expansion, wherein prior to bonding together, ions are implanted from a bonding surface of the lithium tantalate wafer and/or the supporting wafer, to disturb crystallinity near the respective bonding surfaces.

Abstract: The present technology provides a technology that liquid in round-bottom vessels is efficiently agitated. There is provided a vessel rack at least including a holder having a plurality of through-holes into which round-bottom vessels each having a closed-bottom tube shape are inserted, and a support having a plurality of supporting holes that are arranged facing to the through-holes and support bottoms of the round-bottom vessels, the bottoms of the supporting holes each having a bulge such that liquid in the round-bottom vessels forms a vortex at a time of agitation of the liquid. Also, there is provided an agitator of agitating liquid in round-bottom vessels at least including the vessel rack, a mounting unit that mounts the vessel rack, and a rocking unit that rocks the mounting unit, and the like.

Abstract: A composite wafer includes an oxide single crystal thin film of lithium tantalate or lithium niobate transferred onto the entire face of a support wafer and is free from cracking or peeling on a bonding interface between the support wafer and the oxide single crystal thin film. A method for manufacturing a composite wafer at least includes a step of forming an ion-implanted layer in an oxide single crystal wafer, a step of subjecting at least one of the ion-implanted surface of the oxide single crystal wafer and a surface of a support wafer to a surface activation treatment, a step of bonding the ion-implanted surface of the oxide single crystal wafer to the surface of the support wafer to form a laminate, a step of subjecting the laminate to a first heat treatment at a temperature not less than 90° C.