Abstract: A cooperative robotic arm system includes a first robotic arm, a second robotic arm and a controller. The first robotic arm has first working vector. The second robotic arm has second working vector. The controller is configured to: (1) control the first robotic arm and the second robotic arm to stop moving; (2) determine whether a first projection vector of the first working vector projected on a first coordinate axis and a second working vector projected on the first coordinate axis overlaps; (3) when they overlap, determine whether a third projection vector of the first working vector projected on a second coordinate axis and a fourth projection vector of the second working vector projected on the second coordinate axis overlap; and, (4). when they do no overlap, control a controlled-to-moved one of the first robotic arm and the second robotic arm to move along a reset path.

Abstract: The present disclosure provides a numerical simulation method of pulsed laser paint removal and a use thereof. This method establishes a three-dimensional (3D) temperature field model by ANSYS software to perform a numerical simulation of nanosecond pulsed laser paint removal. A high-speed moving pulsed laser is loaded on a surface of the model in a form of heat flux, and a coordinate system is moved to realize loading on different paths. A special surface mesh screening method is used to realize loading on any surface, and it ensures that laser energy distribution on a material surface is in line with reality. In addition, an element birth/death technology is combined to remove an element that exceeds a threshold, so as to intuitively present the surface morphology after laser paint removal. The present disclosure can realize the prediction of the contour of a paint layer ablated by a pulsed laser.

Abstract: Provided is a motor in which the interference between systems can be suppressed even when the number of pole pairs is odd. The motor according to one embodiment of the present disclosure is a three-phase AC motor provided with two-system stator windings to which voltages are applied by inverters different from each other and each of which has a plurality of coils, wherein said stator windings are ubiquitous in the circumferential direction so that the number of said coils disposed overlapped with said coils of the other system is reduced.

Abstract: The present invention relates to the field of 4D printing, and particularly to an electro-responsive folding and unfolding composite material for 4D printing, a method for manufacturing the same, and a method for regulating shape memory behavior thereof. In the process of layer-by-layer printing, conductive layers are embedded into a pre-designed shape memory polymer matrix through spray-coating and laser-irradiation nano-fusion welding, to manufacture a folding and unfolding structure with electro-responsive shape memory behavior. The distribution and range of heat affected zones in the electro-responsive shape memory folding and unfolding structure are controlled by adjusting the number of electric heating layers energized and the value of an energizing voltage. The speed of shape recovery and the degree of shape recovery of the structure are regulated according to a magnitude relationship between a shape recovery force Frecovery and a resistance Fresistance to shape recovery of the structure.

Abstract: The present invention relates to an epitaxial structure of N-face group III nitride, its active device, and its gate protection device. The epitaxial structure of N-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: A method of manufacturing a semiconductor device includes: forming a conductive pad region over a substrate; depositing a dielectric layer over the conductive pad region; forming a first passivation layer over the dielectric layer; etching the first passivation layer through the dielectric layer, thereby exposing a first area of the conductive pad region; forming a second passivation layer over the first area of the conductive pad region; and removing portions of the second passivation layer to expose a second area of the conductive pad region.

Abstract: A robot arm including a first joint, a second joint, and a coupling element is provided. The first joint has a first inclined surface. The second joint is jointed to the first joint and has a second inclined surface. The coupling element has a third inclined surface and a fourth inclined surface opposite to the third inclined surface, wherein the third inclined surface contacts the first inclined surface, and the fourth inclined surface contacts the second inclined surface.

Abstract: In a cryogenic workbench, a cryogenic laser peening system and a control method, a tapered surface gap d is adjusted, based on the electromagnetic principle, to control the gasification volume of liquid nitrogen, then the temperatures of the copious cooling workbench and the surface of a sample are precisely controlled by means of the adjustment of the heat absorption amount of liquid nitrogen gasification, the temperature adjustment range and the temperature rising/lowering rate of the cryogenic laser peening system are effectively extended, and the precision of the control of the surface temperature of the sample is increased in combination with a closed-loop control. Additionally, an intelligent control of a cryogenic laser peening process is realized by means of a computer and a PLC control unit, whereby the usage amount of liquid nitrogen in the experiment process is reduced and the processing efficiency is improved.

Abstract: A method includes depositing a first dielectric layer covering an electrical connector, depositing a second dielectric layer over the first dielectric layer, and performing a first etching process to etch-through the second dielectric layer and the first dielectric layer. An opening is formed in the first dielectric layer and the second dielectric layer to reveal the electrical connector. A second etching process is performed to laterally etch the first dielectric layer and the second dielectric layer. An isolation layer is deposited to extend into the opening. The isolation layer has a vertical portion and a first horizontal portion in the opening, and a second horizontal portion overlapping the second dielectric layer. An anisotropic etching process is performed on the isolation layer, with the vertical portion of the isolation layer being left in the opening.

Abstract: A method includes depositing a first dielectric layer covering an electrical connector, depositing a second dielectric layer over the first dielectric layer, and performing a first etching process to etch-through the second dielectric layer and the first dielectric layer. An opening is formed in the first dielectric layer and the second dielectric layer to reveal the electrical connector. A second etching process is performed to laterally etch the first dielectric layer and the second dielectric layer. An isolation layer is deposited to extend into the opening. The isolation layer has a vertical portion and a first horizontal portion in the opening, and a second horizontal portion overlapping the second dielectric layer. An anisotropic etching process is performed on the isolation layer, with the vertical portion of the isolation layer being left in the opening.

Abstract: Various embodiments of the present disclosure provide a method for forming a recessed gate electrode that has high thickness uniformity. A gate dielectric layer is deposited lining a recess, and a multilayer film is deposited lining the recess over the gate dielectric layer. The multilayer film comprises a gate electrode layer, a first sacrificial layer over the gate dielectric layer, and a second sacrificial layer over the first sacrificial dielectric layer. A planarization is performed into the second sacrificial layer and stops on the first sacrificial layer. A first etch is performed into the first and second sacrificial layers to remove the first sacrificial layer at sides of the recess. A second etch is performed into the gate electrode layer using the first sacrificial layer as a mask to form the recessed gate electrode. A third etch is performed to remove the first sacrificial layer after the second etch.

Abstract: The present invention relates to the field of 4D printing, and particularly to an electro-responsive folding and unfolding composite material for 4D printing, a method for manufacturing the same, and a method for regulating shape memory behavior thereof. In the process of layer-by-layer printing, conductive layers are embedded into a pre-designed shape memory polymer matrix through spray-coating and laser-irradiation nano-fusion welding, to manufacture a folding and unfolding structure with electro-responsive shape memory behavior. The distribution and range of heat affected zones in the electro-responsive shape memory folding and unfolding structure are controlled by adjusting the number of electric heating layers energized and the value of an energizing voltage. The speed of shape recovery and the degree of shape recovery of the structure are regulated according to a magnitude relationship between a shape recovery force Frecovery and a resistance Fresistance to shape recovery of the structure.

Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.

Abstract: In some embodiments, the present disclosure relates to an image sensor, including a semiconductor substrate, a plurality of photodiodes disposed within the semiconductor substrate, and a deep trench isolation structure separating the plurality of photodiodes from one another and defining a plurality of pixel regions corresponding to the plurality of photodiodes. The plurality of pixel regions includes a first pixel region sensitive to a first region of a light spectrum, a second pixel region sensitive to a second region of the light spectrum, and a third pixel region sensitive to a third region of the light spectrum. The first pixel region is smaller than the second pixel region or the third pixel region.

Abstract: The present disclosure provides a numerical simulation method of pulsed laser paint removal and a use thereof. This method establishes a three-dimensional (3D) temperature field model by ANSYS software to perform a numerical simulation of nanosecond pulsed laser paint removal. A high-speed moving pulsed laser is loaded on a surface of the model in a form of heat flux, and a coordinate system is moved to realize loading on different paths. A special surface mesh screening method is used to realize loading on any surface, and it ensures that laser energy distribution on a material surface is in line with reality. In addition, an element birth/death technology is combined to remove an element that exceeds a threshold, so as to intuitively present the surface morphology after laser paint removal. The present disclosure can realize the prediction of the contour of a paint layer ablated by a pulsed laser.

Abstract: A keyboard device includes a keyboard module and a palm rest module. The palm rest module is arranged beside a lateral side of the keyboard module, and supports a wrist of a user. The palm rest module includes a pedestal, a casing and an adjusting element. The casing is disposed on the pedestal. The adjusting element is arranged between the pedestal and the casing. A position of the casing relative to the pedestal is adjustable through the adjusting element. In a first usage state, the casing is moved toward the keyboard module or moved away from the keyboard module through the adjusting element. In a second usage state, the casing is rotated about the adjusting element and relative to the keyboard module, so that an included angle is formed between the casing and the lateral side of the keyboard module.

Abstract: Various embodiments of the present disclosure provide a method for forming a recessed gate electrode that has high thickness uniformity. A gate dielectric layer is deposited lining a recess, and a multilayer film is deposited lining the recess over the gate dielectric layer. The multilayer film comprises a gate electrode layer, a first sacrificial layer over the gate dielectric layer, and a second sacrificial layer over the first sacrificial dielectric layer. A planarization is performed into the second sacrificial layer and stops on the first sacrificial layer. A first etch is performed into the first and second sacrificial layers to remove the first sacrificial layer at sides of the recess. A second etch is performed into the gate electrode layer using the first sacrificial layer as a mask to form the recessed gate electrode. A third etch is performed to remove the first sacrificial layer after the second etch.

Abstract: The present invention provides a device for peening by coupling a laser shock wave and an ultrasonic shock wave in real time. The device includes a synchronization device, a laser device, two ultrasonic shock devices, a working platform and a control system. An upper casing is supported above a base through second hydraulic cylinders. Two supporting beams are provided under the upper casing through the second hydraulic cylinders. Limiting slide rails are provided under the upper casing through first hydraulic cylinders. The two ultrasonic shock devices are connected through the synchronization device, which is configured to synchronize movement and rotation of the two ultrasonic shock devices. The laser device is configured to generate a laser beam to pass through the upper casing and irradiate a surface of a workpiece. The control system controls the laser device to lag behind the two ultrasonic shock devices to perform laser shock.

Abstract: A robotic arm system includes first robotic arm, second robotic arm and main controller. The first robotic arm and the second robotic arm are configured to grab object. The main controller is configured to: determine whether first force vector of first force applied by the first robotic arm to the object is equal to second force vector of second force applied by the second robotic arm to the object; when the first force vector and the second force vector are not equal, obtain a first difference between the first force vector and the second force vector; and according to the first difference, change at least one of the first force applied by the first robotic arm to the object and the second force applied by the second robotic arm to the object so that the first force vector and the second force vector are equal.

Abstract: An LED arc display includes at least one LED matrix array module. Each LED matrix array module is composed of a plurality of LED matrix units arranged regularly. Each LED matrix unit includes a display surface, and the display surface has an outer contour. The outer contour is a non-quadrilateral. Therefore, a non-smooth visual experience caused by assembly tolerances of the plurality of LED matrix units can be improved by using non-quadrilateral outer contours of each LED matrix unit.