Abstract: Structures and formation methods of a chip package structure are provided. The chip package structure includes a semiconductor die bonded over an interposer substrate. The chip package structure also includes a warpage release layer structure. The warpage release layer structure includes an organic material layer and an overlying high coefficient of thermal expansion (CTE) material layer with a CTE that is substantially equal to or greater than 9 ppm/° C. The organic material layer is in direct contact with the upper surface of the semiconductor die, and the overlying high CTE material layer covers the upper surface of the semiconductor die.

Abstract: A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes an interposer substrate over the wiring substrate. The interposer substrate includes a redistribution structure, a dielectric layer, a conductive via, and a plurality of first dummy vias, the dielectric layer is over the redistribution structure, the conductive via and the first dummy vias pass through the dielectric layer, the first dummy vias surround the conductive via, and the first dummy vias are electrically insulated from the wiring substrate. The chip package structure includes a chip structure over the interposer substrate. The chip structure is electrically connected to the conductive via, and the chip structure is electrically insulated from the first dummy vias.

Abstract: A package structure is provided. The package structure includes a first conductive pad in an insulating layer, a first under bump metallurgy structure under the first insulating layer, and a first conductive via in the insulating layer. The first conductive via is vertically connected to the first conductive pad and the first under bump metallurgy structure. In a plan view, a first area of the first under bump metallurgy structure is confined within a second area of the first conductive pad.

Abstract: Structures and formation methods of a chip package structure are provided. The chip package structure includes adjacent first and second semiconductor dies bonded over an interposer substrate. The chip package structure also includes an insulating layer formed over the interposer substrate. The insulating layer has a first portion surrounding the first and second semiconductor dies and a second portion extending between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, and between the interposer substrate and the first and second semiconductor dies. The lateral distance from the top end of the first sidewall to the top end of the second sidewall is greater than the lateral distance from the bottom end of the first sidewall to the bottom end of the second sidewall.

Abstract: A chip package structure includes at least one semiconductor die attached to a redistribution structure, a first underfill material portion located between the redistribution structure and the at least one semiconductor die and laterally surrounding the solder material portions, a molding compound laterally surrounding at least one semiconductor die, and a second underfill material portion contacting sidewalls of the redistribution structure and sidewalls of the molding compound and including at least one cut region. The second underfill material portion includes a vertically-extending portion having a uniform lateral width and a horizontally-extending portion having a uniform vertical thickness and adjoined to a bottom end of the vertically-extending portion within each of the at least one cut region.

Abstract: A package structure is provided. The package structure includes a redistribution structure and a semiconductor die over the redistribution structure, and bonding elements below the redistribution structure. The semiconductor die has a first sidewall and a second sidewall connected to each other. The bonding elements include a first row of bonding elements and a second row of bonding elements. In a plan view, the second row of bonding elements is arranged between the first row of bonding elements and an extending line of the second sidewall. A minimum distance between the second row of bonding elements and the first sidewall is greater than the minimum distance between the first row of bonding elements and the first sidewall.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, and a first semiconductor die and a second semiconductor die disposed thereon. A ring structure is attached to the package substrate and surrounds the semiconductor dies. A lid structure is attached to the ring structure and disposed over the semiconductor dies, and has an opening exposing the second semiconductor die. A heat sink is disposed over the lid structure and has a portion extending into the opening of the lid structure. A first thermal interface material (TIM) layer is interposed between the lid structure and the first semiconductor die. A second TIM layer is interposed between the extending portion of the heat sink and the second semiconductor die. The first TIM layer has a thermal conductivity higher than the thermal conductivity of the second TIM layer.

Abstract: A method includes bonding a first package component over a second package component. The second package component includes a plurality of dielectric layers, and a plurality of redistribution lines in the plurality of dielectric layers. The method further includes dispensing a stress absorber on the second package component, curing the stress absorber, and forming an encapsulant on the second package component and the stress absorber.

Abstract: Provided is a package structure including a substrate, a stiffener ring, an eccentric die, a lid layer, and a buffer layer. The stiffener ring is disposed on the substrate. The stiffener ring has an inner perimeter to enclose an accommodation area. The eccentric die is disposed within the accommodation area on the substrate. The eccentric die is offset from a center of the accommodation area to close to a first side of the stiffener ring. The lid layer is disposed on the stiffener ring and overlays the eccentric die. The buffer layer is embedded in the lid layer between the first side of the stiffener ring and the eccentric die. The buffer layer has a thickness less than a thickness of the lid layer.

Abstract: A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes a first chip structure and a second chip structure over the wiring substrate. The first chip structure is spaced apart from the second chip structure by a gap. The chip package structure includes a ring structure over the wiring substrate. The ring structure has a first opening, the first chip structure and the second chip structure are in the first opening, the first opening has a first inner wall, the first inner wall has a first recess, and the gap extends toward the first recess.

Abstract: A semiconductor device package is provided. The semiconductor device package includes a substrate, a first package component, a second package component, and at least one dummy die. The first and second package components are disposed over and bonded to the substrate. The first and second package components are different types of electronic components that provide different functions. The dummy die is disposed over and attached to the substrate. The dummy die is located between the first and second package components and is electrically isolated from the substrate.

Abstract: A method includes forming a first dielectric layer, forming a first redistribution line comprising a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes forming a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, with a first center of conductive pad being offsetting from a second center of the conductive bump. The second via is further offset from the second center of the conductive bump.

Abstract: A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

Abstract: A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

Abstract: A semiconductor package structure includes an interposer substrate formed over a package substrate. The structure also includes a die disposed over the interposer substrate. The structure also includes a first heat spreader disposed over the package substrate. The structure also includes a second heat spreader disposed over the die and connected to the first heat spreader. The coefficient of thermal expansion (CTE) of the first heat spreader and the coefficient of thermal expansion of the second heat spreader are different.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a first surface of the substrate. The ring structure is located over the first surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the first surface of the substrate and a top surface opposite the bottom surface. The ring structure includes a plurality of side parts and a plurality of corner parts recessed from the top surface and thinner than the side parts. Any two of the corner parts are separated from one another by one of the side parts. The adhesive layer is interposed between the bottom surface of the ring structure and the first surface of the substrate.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, an interposer substrate over the package substrate, semiconductor dies over the interposer substrate, and an underfill element over the interposer substrate and between the semiconductor dies and interposer substrate. The semiconductor die package also includes a ring structure and one or more lid structures separated from the ring structure. The ring structure is coupled to the package substrate to control warpage. The lid structures are coupled to the top surfaces of the semiconductor dies to control warpage and help heat dissipation. In addition, the lid structures define a gap to allow a portion of the underfill element between the adjacent semiconductor dies to be exposed, so that stress concentration on that portion can be avoided or reduced. Accordingly, the reliability of the semiconductor die package is improved.

Abstract: A method includes bonding a first package component over a second package component. The second package component includes a plurality of dielectric layers, and a plurality of redistribution lines in the plurality of dielectric layers. The method further includes dispensing a stress absorber on the second package component, curing the stress absorber, and forming an encapsulant on the second package component and the stress absorber.

Abstract: A package structure is provided. The package structure includes a first package component, a second package component, and a lid structure. The first package component includes a plurality of integrated circuit dies and an underfill formed between the integrated circuit dies. The second package component includes a substrate, and the first package component is mounted on the substrate. The lid structure is disposed on the second package component and around the first package component, and the lid structure covers the integrated circuit dies and exposes the underfill.

Abstract: A semiconductor package provided herein includes a wiring substrate, a semiconductor component, conductor terminals, a bottom stiffener and a top stiffener. The wiring substrate has a first surface and a second surface opposite to the first surface. The semiconductor component is disposed on the first surface of the wiring substrate. The conductor terminals are disposed on the second surface of the wiring substrate and electrically connected to the semiconductor component through the wiring substrate. The bottom stiffener is disposed on the second surface of the wiring substrate and positioned between the conductor terminals. The top stiffener is disposed on the first surface of the wiring substrate. The top stiffener is laterally spaced further away from the semiconductor component than the bottom stiffener.