Abstract: A disc cartridge can effectively prevent dirt particles from entering the cartridge main body and improve the reliability of the operation of signal recording/reproduction on the disc-shaped recording medium. The disc cartridge comprises a cartridge main body 6 and a shutter member 35 having an upper shutter section 41 and a lower shutter section 42 adapted to openably close the recording/reproduction opening 17 and the drive opening 18 arranged outside the cartridge main body 6. A shutter cover 50 is arranged on the main surface of the cartridge main body 6 to cover the area of displacement of the lower shutter section 42. The shutter cover 50 is provided with an opening 51 slightly smaller than the lower shutter section 42 of the shutter member 35 at a position corresponding to the recording/reproduction opening 17 and the drive opening 18.

Abstract: In the manufacturing process of recording media by transcribing information signals formed on a stamper onto the substrate, high-quality transcriptions must be achieved without causing any thermal deformations or warps. To this end, when the convexconcaves formed on a main surface of the stamper representing information signals are transcribed onto the substrate, a main surface of said substrate and a main surface of said stamper where the convexconcaves are formed are brought into contact facing each other, and said substrate and said stamper are pressurized with a prescribed pressure as they remain in contact, and in addition the temperature of only the contact surface layer of said substrate with said stamper is raised.

Abstract: In manufacturing a disc cartridge having a pair of opposing upper and lower shells, and an information recording medium disc accommodated therebetween, first ends of the shells are coupled, second ends of the shells are coupled when first ends of the shells are coupled, and the disc is inserted from the opened second ends of the shells.

Abstract: In order to access a memory cell array (1), an address translation table which stores a correspondence between logical and physical addresses, and an empty block table which specifies locations of empty blocks, are stored in an arbitrary block of the memory cell array (1) itself. In the case of reading data from the memory cell array (1), a physical address to read data is attained with reference to the address translation table stored in the memory cell array (1). Meanwhile, in the case of writing data, an empty block is detected from the empty block table stored in the memory cell array (1), and data is written in the empty block. Moreover, the address translation table and the empty block table which have been updated are written in another empty block.

Abstract: A semiconductor device has a gate electrode formed on P type semiconductor substrate through a gate insulation film, a low concentration N− type drain region formed so as to be adjacent to the gate electrode, a high concentration N+ type drain region separated from the other end of said gate electrode and included in said low N− type drain region, and a middle concentration N type layer at a region spanning at least from said gate electrode to said high concentration N+ type drain region, and formed so that impurity concentration becomes low at a region near the gate electrode.

Abstract: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate electrode formed on a semiconductor substrate via a gate insulating film, an LP layer (a P-type body region) formed so that the LP layer is adjacent to the gate electrode, an N-type source region and a channel region respectively formed in the LP layer, an N-type drain region formed in a position apart from the LP layer and an LN layer (a drift region) formed so that the LN layer surrounds the drain region is characterized in that the LP layer is formed up to the side of the drain region through an active region under the gate electrode and an SLN layer is formed from the drain region to a part before the active region.

Abstract: A semiconductor device has a gate electrode formed on P type semiconductor substrate through a gate insulation film, a low concentration N− type drain region formed so as to be adjacent to the gate electrode, a high concentration N+ type drain region separated from the other end of said gate electrode and included in said low N− type drain region, and a middle concentration N type layer having high impurity concentration peak at a position of the predetermined depth in said substrate at a region spanning at least from said gate electrode to said high concentration N+ type drain region, and formed so that high impurity concentration becomes low at a region near surface of the substrate.

Abstract: A semiconductor device has a gate electrode formed extending on a first and second gate insulation films formed on P type semiconductor substrate, an N+ type source region adjacent to one end of the gate electrode, an N−type drain region facing said source region through a channel region, having high impurity concentration peak at a position of the predetermined depth at least in said substrate under said first gate insulation film, and formed so that high impurity concentration becomes low at a region near surface of the substrate, an N− type drain region formed so as to range to the N− type drain region, an N+ type drain region separated from the other end of said gate electrode and included in said N− type drain region, and an N type layer formed so as to span from one end portion of said first gate insulation film to said N+ type drain region.

Abstract: A semiconductor device including: a first gate insulating film which is pattern-formed on an N type well region within a P type semiconductor substrate; a second gate insulating film which is formed on the semiconductor substrate except for this first gate insulating film; a gate electrode, which is formed in such a manner that this gate electrode is bridged over the first gate insulating film and the second gate insulating film; a P type body region which is formed in such a manner that this P type body region is located adjacent to the gate electrode; an N type source region and a channel region, which are formed within this P type body region; and an N type drain region which is formed at a position separated from the P type body region.

Abstract: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate electrode formed on a semiconductor substrate via a gate insulating film, an LP layer (a P-type body region) formed so that the LP layer is adjacent to the gate electrode, an N-type source region and a channel region respectively formed in the LP layer, an N-type drain region formed in a position apart from the LP layer and an LN layer (a drift region) formed so that the LN layer surrounds the drain region is characterized in that the LP layer is formed up to the side of the drain region through an active region under the gate electrode and an SLN layer is formed from the drain region to a part before the active region.

Abstract: The present invention relates to a technique for improving a withdstanding voltage of operation of a semicondcutor device. The present invention provides a semiconductor device including a gate electrode formed on a semiconductor substrate via the first and the second gate oxide films and source-drain regions of low and high concentration formed adjacent to the gate electrode. A diffusion region width of the source-drain regions of low concentration on the source region side is smaller than at least that on the drain region side. A source region of high concentraton is formed adjacent to one end of the gate electrode. A drain region of high concentration is formed at a position distant from the other end of the gate electrode by a predetemrined interval.

Abstract: The objective of the present invention is to improve drain withstanding voltage at operation.

Abstract: A storage case is comprised of a case main body, a cover, a rotating means and a tilt means. The case main body has a bottom plate, the front plate, a back plate, a right plate and a left plate which are arranged so that the front, back, right and left plates surround four sides of the bottom plate. The cover is installed to the case main body so as to open and close an opening of the case main body. The rotating means swingably and slidably connects the cover with the case main body. The rotating means has a rotation shaft installed to the cover and a bearing portion installed to the case main body. The bearing portion is formed into an elongate groove extending in a vertical direction of the case main body. The front plate is tilted forward by the tilt means.

Abstract: A disc cartridge is played by a drive device. The disc cartridge includes a recording disc and a case for rotatably receiving therein the recording disc. The drive device includes a cartridge holder for receiving the disc cartridge, a spindle for rotating the recording disc installed in the disc cartridge, and a recording/reading head unit for recording information on the recording disc and/or reading the information on the recording disc. A disc type discriminating apparatus is incorporated with both the disc cartridge and the drive device for discriminating the type of the recording disc in the disc cartridge when the disc cartridge is put into the drive device. The apparatus comprises a sensed member fixed to the disc cartridge, the sensed member being capable of representing the type of the recording disc in the is disc cartridge; and a sensing device fixed to the drive device for sensing the sensed member to discriminate the type of the recording disc when the disc cartridge is put into the drive device.

Abstract: A metal shutter for use with a disc cartridge, has a following structure. A screen portion of the shutter is formed on an outside surface thereof with an indication area. The indication area includes a stamped rough surface part which is configured to constitute a given pattern. The screen portion is formed, on an inside surface thereof at a portion corresponding to the indication area, with another stamped rough surface area.

Abstract: In the manufacturing process of recording media by transcribing information signals formed on a stamper onto the substrate, high-quality transcriptions must be achieved without causing any thermal deformations or warps. To this end, when the convexconcaves formed on a main surface of the stamper representing information signals are transcribed onto the substrate, a main surface of said substrate and a main surface of said stamper where the convexconcaves are formed are brought into contact facing each other, and said substrate and said stamper are pressurized with a prescribed pressure as they remain in contact, and in addition the temperature of only the contact surface layer of said substrate with said stamper is raised.

Abstract: To enable the reduction of ON-state resistance in a state in which the withstand voltage is secured, a semiconductor device according to the invention is provided with a gate electrode formed so that the gate electrode ranges from a gate oxide film formed on an N-type well region formed in a P-type semiconductor substrate to a selective oxide film, a P-type source region formed so that the source region is adjacent to the gate electrode, a P-type drain region formed in a position apart from the gate electrode and a P-type drift region (an LP layer) formed so that the drift region surrounds the drain region, and is characterized in that a P-type impurities layer (an FP layer) is formed so that the impurities layer is adjacent to the drain region.

Abstract: To reduce ON-state resistance with desired withstand voltage secured, a semiconductor device provided with a gate electrode formed on a semiconductor substrate via a gate insulating film, an LP layer (a P-type body region) formed so that the LP layer is adjacent to the gate electrode, an N-type source region and a channel region respectively formed in the LP layer, an N-type drain region formed in a position apart from the LP layer and an LN layer (a drift region) formed so that the LN layer surrounds the drain region is characterized in that a P-type layer ranging to the LP layer is formed under the gate electrode.

Abstract: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate electrode formed on a semiconductor substrate via a gate insulating film, an LP layer (a P-type body region) formed so that the LP layer is adjacent to the gate electrode, an N-type source region and a channel region respectively formed in the LP layer, an N-type drain region formed in a position apart from the LP layer and an LN layer (a drift region) formed so that the LN layer surrounds the drain region is characterized in that the LP layer is formed up to the side of the drain region through an active region under the gate electrode and an SLN layer is formed from the drain region to a part before the active region.

Abstract: To provide a new shutter open/close mechanism (26) suitable for use with a cartridge body whose front end is formed in an arbitrary shape for easily knowing a correct direction of insertion in a recorder/player, a guide recess (36) to support a shutter plate (25) movably is formed on a main side of the cartridge body (6) to be oblique relative to the width of the cartridge body (6). The shutter open/close mechanism (26) includes a guide member (31) supporting the shutter plate (25) and movably engaged in the guide recess (36), an operating member (32) to move the guide member (31), a transmission member (33) connecting the guide member (31) and operating member (32) to each other to transmit an operating force from the operating member (32) to the guide member (31), and support surfaces (37) formed on the cartridge body (6) to support the operating member (32) movably.