Patents by Inventor Shuji Nakamura

Shuji Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11217722
    Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: January 4, 2022
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Erin C. Young, Benjamin P. Yonkee, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 11192121
    Abstract: A blood component separator (1) includes a blood storage vessel (20) that includes a first storage part (21) and a second storage part (22), a slider (30) movable from the first storage part to the second storage part, and a flow path (40f) for communicating an inside and an outside of the storage vessel. When the slider is in the first storage part, the first storage part and the second storage part are in communication with each other. When the slider is inserted into the second storage part, a liquid-tight seal is formed between the slider and the inner peripheral surface of the second storage part and the communication between the first storage part and the second storage part is blocked by the slider. The slider is movable in the second storage part while maintaining the liquid-tight seal between the slider and the inner peripheral surface of the second storage part.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: December 7, 2021
    Assignee: TRANSELL Co., Ltd.
    Inventors: Nariyuki Hamada, Shuji Nakamura, Katsuyuki Sado, Kenta Kaneda
  • Publication number: 20210369084
    Abstract: A flexible tube insertion apparatus includes an insertion section inserted into an insertion target conduit, a rigidity variable member disposed inside the insertion section and capable of changing rigidity, and a binding member configured to bind a proximal end portion of the rigidity variable member to be capable of changing a pressing force applied to an outer circumferential surface of the proximal end portion.
    Type: Application
    Filed: August 18, 2021
    Publication date: December 2, 2021
    Applicant: OLYMPUS CORPORATION
    Inventors: Shuji NAKAMURA, Takeshi TAKAHASHI
  • Patent number: 11164997
    Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 ?m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: November 2, 2021
    Assignee: THE REGENTS OF THE UNIVERISTY OF CALIFORNIA
    Inventors: Benjamin P. Yonkee, Erin C. Young, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20210210657
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Application
    Filed: March 18, 2021
    Publication date: July 8, 2021
    Applicants: The Regents of the University of California
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Patent number: 11045073
    Abstract: A flexible tube insertion apparatus includes an insertion section, a stiffness variable unit that changes a bending stiffness of the insertion section and a detection unit that detects an advance that is a movement toward a distal end of the insertion section and a retreat that is a movement toward a proximal end of the insertion section. A controller controls the stiffness variable unit to change the bending stiffness of the insertion section to a first bending stiffness when the detection unit has detected the advance of the insertion section, and that controls the stiffness variable unit to change the bending stiffness of the insertion section to a second bending stiffness higher than the first bending when the detection unit has detected the retreat of the insertion section.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: June 29, 2021
    Assignee: OLYMPUS CORPORATION
    Inventors: Yuichi Ikeda, Shuji Nakamura
  • Patent number: 11011329
    Abstract: A key switch device includes: an operation member to be depressed; a switch disposed below the operation member; a reaction force generating member that is provided between the operation member and the switch, performs elastic buckling deformation by depression of the operation member, gives a reaction force according to the elastic buckling deformation to the operation member; and a depression member that is provided between the operation member and the switch, and depresses the switch; wherein the reaction force generating member includes a supporter that supports the depression member.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: May 18, 2021
    Assignee: FUJITSU COMPONENT LIMITED
    Inventors: Takeshi Nishino, Shuji Nakamura, Akihiko Takemae, Tamotsu Koike
  • Patent number: 11000180
    Abstract: A flexible tube insertion apparatus includes an insertion section, one or more stiffness variable portion, and a detection unit. The flexible tube insertion apparatus includes a bending information calculator, a main determiner, and a controller that performs control to increase a stiffness of the stiffness variable portion provided in a segment located in a bent part, when the main determiner determines that the bent part is present and the segment provided in the stiffness variable portion is located in the bent part.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: May 11, 2021
    Assignee: OLYMPUS CORPORATION
    Inventors: Takeshi Takahashi, Shuji Nakamura
  • Patent number: 10985285
    Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 ?m. A flip chip display device is also disclosed.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: April 20, 2021
    Assignee: The Regents of the University of California
    Inventors: Benjamin P. Yonkee, Asad J. Mughal, David Hwang, Erin C. Young, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 10985293
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: April 20, 2021
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Publication number: 20210104504
    Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
    Type: Application
    Filed: August 17, 2017
    Publication date: April 8, 2021
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Benjamin P. Yonkee, Erin C. Young, Charles Forman, John T. Leonard, SeungGeun Lee, Dan Cohen, Robert M. Farrell, Michael Iza, Burhan Saifaddin, Abdullah Almogbel, Humberto Foronda, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20200390315
    Abstract: A flexible tube insertion apparatus includes a flexible insertion section to be inserted into a subject and bent by a reaction force from the subject, a variable stiffness unit provided in the insertion section and configured to change a stiffness of the insertion section, and a shape detector configured to detect a bent shape of the insertion section. The apparatus further includes a force specifier configured to acquire a distribution of the reaction force on a distal side from a predetermined point in the bent shape and specify a maximum reaction force position, and a stiffness controller configured to control a stiffness of the variable stiffness unit so as to increase a stiffness of the variable stiffness unit between the predetermined point and the maximum reaction force position.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 17, 2020
    Applicant: OLYMPUS CORPORATION
    Inventors: Shuji NAKAMURA, Takeshi TAKAHASHI, Yuichi IKEDA
  • Patent number: 10863884
    Abstract: One embodiment of the present invention is a flexible tube insertion apparatus including a flexible insertion section to be inserted into a subject. The flexible tube insertion apparatus includes an insertion section state detecting device that detects a state of the insertion section necessary for insertion prediction as detection information when the insertion section is inserted into a subject, and at least one circuit that predicts, using the detection information detected by the insertion section state detecting device, a propulsion state of a distal end of the insertion section and a state of the subject when the insertion section is further inserted from the state of the insertion section, and produces an output based on the prediction.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: December 15, 2020
    Assignee: OLYMPUS CORPORATION
    Inventor: Shuji Nakamura
  • Publication number: 20200335663
    Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
    Type: Application
    Filed: February 6, 2017
    Publication date: October 22, 2020
    Applicant: The Regents of the University of California
    Inventors: Asad J. Mughal, Stacy J. Kowsz, Robert M. Farrell, Benjamin P. Yonkee, Erin C. Young, Christopher D. Pynn, Tal Margalith, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20200259314
    Abstract: A sensing apparatus, an illumination system, and a data communication system including a Vertical Cavity Surface Emitting Laser (VCSEL) or VCSEL array.
    Type: Application
    Filed: October 31, 2018
    Publication date: August 13, 2020
    Applicant: The Regents of the University of California
    Inventors: Jared Kearns, Charles Forman, Dan Cohen, Kenneth S. Kosik, Shuji Nakamura
  • Publication number: 20200243334
    Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.
    Type: Application
    Filed: January 24, 2020
    Publication date: July 30, 2020
    Applicant: The Regents of the University of California
    Inventors: Christian J. Zollner, Michael Iza, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20200244036
    Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 ?, or at least 20 ?, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.
    Type: Application
    Filed: October 2, 2018
    Publication date: July 30, 2020
    Applicant: The Regents of the University of California
    Inventors: Charles Forman, SeungGeun Lee, Erin C. Young, Jared Kearns, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20200212258
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Application
    Filed: September 5, 2019
    Publication date: July 2, 2020
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Patent number: 10685835
    Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: June 16, 2020
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST)
    Inventors: Benjamin P. Yonkee, Erin C. Young, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 10660504
    Abstract: In a flexible tube insertion apparatus, at least one circuit determines whether an S-shape is formed in an insertion section based on a shape information of the insertion section detected by a detector, determines whether an intersection angle between an extension line of a central axis of the insertion section and a tangential line for the insertion section at an inflection point is enlarged or not based on the shape information, and determines whether or not the stiffness variable portions are provided in a position of the S-shape in the insertion section when it is determined that the S-shape is formed and the intersection angle is enlarged. A stiffness controller increases a stiffness of the stiffness variable portions included in the position of the S-shape in accordance with the determination of the circuit.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: May 26, 2020
    Assignee: OLYMPUS CORPORATION
    Inventors: Shuji Nakamura, Takeshi Takahashi