Abstract: The present invention relates to provision of a photosensitive resin composition containing (A) a photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent, and (B) a photopolymerization initiator, wherein at least one of the components contained in the photosensitive resin composition is a component including a dicyclopentadiene structure; a photosensitive resin film using the foregoing photosensitive resin composition; a printed wiring board and a method for producing the same; and a semiconductor package.

Abstract: Surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a substrate and a piezoelectric layer implemented over the substrate to have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric layer to have mass density and thickness selected to provide a tuned mass-loading property for the thickness of the piezoelectric layer.

Abstract: A III-V or II-VI compound based device is fabricated having one or more layers with an in-plane lattice constant or strain that is at least 20% biaxially relaxed, preferably more than 20% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed. A III-V or II-VI compound based decomposition stop layer is created on or above a III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, and a temperature increase decomposes the III-V or II-VI compound based decomposition layer. A III-V or II-VI compound based device structure is grown on or above the III-V or II-VI compound based decomposition stop layer.

Abstract: A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.

Abstract: The present invention provide a puncture instrument capable of administering (supplying) a drug solution. The puncture instrument includes a puncture tip section (2); a first tubular body (3) connected to the puncture tip section (2) at the distal end; and an outer tubular body (5) at least partially covering the first tubular body (3). The first tubular body (3) is formed to be rotatable around an axis along the longitudinal direction. The first tubular body (3) has an outer diameter smaller than an inner diameter of the outer tubular body (5). A drug solution supply path (5a) is provided on the outside of the first tubular body (3).

Abstract: In an example, the present invention provides a laser fusion system comprising a reactor, a fusion material within an interior region of the reactor, and a high intensity pulse laser generation system configured by a hub and spoke spatial arrangement of laser cavity regions within the reactor.

Abstract: In an example, the present invention provides a high intensity pulse laser generation system. The system has a variety of elements. The system has an optical cavity maintained in a vacuum, e.g., 300 Torr and less. In an example, the optical cavity is configured to increase an intensity of a laser beam comprising a pulse from a first energy power intensity to a second higher energy power intensity propagating on a first optical path configured within the optical cavity by circulating or reciprocating at least a portion of the laser beam.

Abstract: A method for fabricating small size light emitting diodes (LEDs) on high-quality epitaxial crystal layers. III-nitride epitaxial lateral overgrowth (ELO) layers are grown on a substrate using a growth restrict mask. III-nitride device layers are grown on wings of the III-nitride ELO layers, to form island-like III-nitride semiconductor layers. The wings of the III-nitride ELO layers have at least an order of magnitude smaller defect density than the substrate, resulting in superior characteristics for the devices made thereon. Light emitting mesas are etched from the island-like III-nitride semiconductor layers, wherein each of the light emitting mesas corresponds to a device; and a device unit pattern is etched from the island-like III-nitride semiconductor layers, wherein the device unit pattern is comprised of one or more of the light emitting mesas. The device unit pattern including the island-like III-nitride semiconductor layers is then transferred to display panel or a carrier.

Abstract: In an example, the present invention provides a reactor system for a space application. The system has a reactor comprising a fusion material, and at least one satellite system positioned in an orbit above a geographical location of a planet. In an example, the satellite system is operably coupled to the reactor including the fusion material.

Abstract: A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewall thereby increasing a hole concentration in the p-type layer. In one or more examples, the device includes an active region between a first n-type layer and the p-type layer; a second n-type layer on the p-type layer; and a tunnel junction between the second n-type layer and the p-type layer, and the activated p-type layer has a hole concentration characterized by a current density of at least 100 Amps per centimeter square flowing between the first n-type layer and the second n-type layer in response to a voltage of 4 volts or less applied across the first n-type layer and the second n-type layer.

Abstract: A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga2O3.

Abstract: A multilayer structure comprising regions of higher aluminum (Al) composition as compared to adjacent layers, in combination with an undulating active region and controlled buffer layer crystal quality, promotes radiative recombination and improves the performance and efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light emitting devices.

Abstract: A flexible tube insertion apparatus includes a flexible insertion section to be inserted into a subject and bent by a reaction force from the subject, a variable stiffness unit provided in the insertion section and configured to change a stiffness of the insertion section, and a shape detector configured to detect a bent shape of the insertion section. The apparatus further includes a force specifier configured to acquire a distribution of the reaction force on a distal side from a predetermined point in the bent shape and specify a maximum reaction force position, and a stiffness controller configured to control a stiffness of the variable stiffness unit so as to increase a stiffness of the variable stiffness unit between the predetermined point and the maximum reaction force position.

Abstract: In an example, the present invention provides a high intensity pulse laser generation system. The system has a variety of elements. The system has an optical cavity maintained in a vacuum, e.g., 300 Torr and less. In an example, the optical cavity is configured to increase an intensity of a laser beam comprising a pulse from a first energy power intensity to a second higher energy power intensity propagating on a first optical path configured within the optical cavity by circulating or reciprocating at least a portion of the laser beam.

Abstract: A method to fabricate micro-size III-nitride light emitting diodes (?LEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the ?LEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The ?LEDs are fabricated with dimensions that vary from 25 to 10,000 ?m2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction ?LEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 ?m2, the low forward voltage is less than 3.2 V.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A fully transparent UV LED or far-UV LED is disclosed, in which all semiconductor layers except the active region are transparent to the radiation emitted in the active region. The key technology enabling this invention is the transparent tunnel junction, which replaces the optically absorbing p-GaN and metal mirror p-contact currently found in all commercially available UV LEDs. The tunnel junction also enables the use of a second n-AlGaN current spreading layer above the active region (on the p-side of the device) similar to the current spreading layer already found below the active region (on the n-side of the device). Therefore, small-area and/or remote p- and n-contacts can be used, and light can be extracted from both the top-side and bottom-side of the device. This fully transparent semiconductor device can then be packaged using transparent materials into a fully transparent UV LED or far-UV LED with high brightness and efficiency.

Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

Abstract: A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.