Abstract: In an example, according to the present invention, techniques related generally to fusion energy generation are provided. In particular, the present invention provides a system and method for fusion energy using a high intensity pulse or CW laser generation system, and related methods. More particularly, the present invention provides for dynamic beam shaping of a light source for laser fusion.

Abstract: A method of growing III-nitride-based devices, such as light emitting diodes (LEDs) and laser diodes (LDs) on or above a strain relaxed template (SRT). The SRT uses a thin, thermally decomposed, InGaN underlayer, which is referred to as a decomposition layer (DL). Above the DL is a n-type GaN or low composition InGaN decomposition stop layer (DSL). A buffer layer comprising an n-type InGaN/GaN superlattice (SL) is then grown. For an LD structure. an n-type waveguide layer comprising a second n-type InGaN/GaN SL is then grown. followed by an active region, a p-type electron blocking layer (EBL), a p-type waveguide layer comprising a p-type InGaN/GaN SL, and p-type GaN or p-type InGaN layers. For an LED structure, the waveguide layers may be omitted. In this disclosure, AlGaN means AlxGa(1-x)N with 1?x?0 and InGaN means InxGa(1-x)N with 1?x?0.

Abstract: A photosensitive resin composition for a permanent resist according to the present disclosure contains an acid-modified vinyl group-containing resin (A), a thermosetting resin (B), a photopolymerization initiator (C), a photopolymerizable compound (D), and an elastomer (H), the photopolymerizable compound includes a photopolymerizable compound having an isocyanuric skeleton, and the elastomer includes a liquid elastomer or a granular elastomer having an average particle size of less than 4 ?m.

Abstract: In an example. the present invention provides an airplane or aerospace vehicle system configured with a high intensity pulse laser generation system.

Abstract: The present invention provides a high intensity pulse laser generation system. The system has a variety of elements. The system has an optical cavity maintained in a vacuum, e.g., 300 Torr and less. In an example, the optical cavity is configured to increase an intensity of a laser beam comprising a pulse from a first energy power intensity to a second higher energy power intensity propagating on a first optical path configured within the optical cavity by circulating or reciprocating at least a portion of the laser beam.

Abstract: Methods for fabricating a vertical cavity surface emitting laser (VCSEL) using epitaxial lateral overgrowth (ELO). The ELO layers comprise island-like III-nitride semiconductor layers grown on a substrate using a growth restrict mask, wherein the island-like III-nitride semiconductor layers comprise a light emitting resonant cavity. An aperture for the resonant cavity is fabricated on a wing of the ELO layers with distributed Bragg reflector (DBR) mirrors formed on bottom and top regions of the wing of the ELO layers.

Abstract: A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on an epitaxial layer of a light emitting device such as a light emitting diode. The light extraction or guiding structures are fabricated on the epitaxial layer using an epitaxial lateral overgrowth (ELO) technique. The epitaxial light control features can have many different shapes and can be fabricated with standard processing techniques, making them highly manufacturable at costs similar to standard processing techniques.

Abstract: In an example, the present invention provides an airplane or aerospace vehicle system configured with a high intensity pulse laser generation system.

Abstract: According to the present invention, techniques including a system and method for a fusion reactor for initiating a fusion reaction are provided. The system includes a first laser beam configured for irradiating a fuel pellet with the first laser beam having a first pulse energy power density emitted from a plurality of nanosecond laser light sources for a predetermined time. The system also includes a second laser beam configured for irradiating the fuel pellet with the second laser beam having a second pulse energy power density emitted from a plurality of picosecond laser light sources to cause ignition of a fusion reaction.

Abstract: A method of fabricating a plurality of monolithic, cascaded, multiple color III-nitride light-emitting diodes (LEDs) with independent junction control, wherein: each of the LEDs is comprised of at least an n-type III-nitride layer, a III-nitride emitting layer, and a p-type III-nitride layer; at least two of the LEDs are separated by an n-type tunnel junction (TJ) insertion layer grown by selective area growth on or above the p-type III-nitride layer of one of the LEDs; the p-type III-nitride layer of one of the LEDs and the n-type tunnel junction insertion layer form a tunnel junction; and the p-type III-nitride layer of one of the LEDs is at least partially covered by the n-type tunnel junction insertion layer.

Abstract: In an example, the present invention provides a high intensity pulse laser generation system. The system has a variety of elements. The system has an optical cavity maintained in a vacuum, e.g., 300 Torr and less. In an example, the optical cavity is configured to increase an intensity of a laser beam comprising a pulse from a first energy power intensity to a second higher energy power intensity propagating on a first optical path configured within the optical cavity by circulating or reciprocating at least a portion of the laser beam.

Abstract: A III-V or II-VI compound based device is fabricated having one or more layers with an in-plane lattice constant or strain that is at least 20% biaxially relaxed, preferably more than 20% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed. A III-V or II-VI compound based decomposition stop layer is created on or above a III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, and a temperature increase decomposes the III-V or II-VI compound based decomposition layer. A III-V or II-VI compound based device structure is grown on or above the III-V or II-VI compound based decomposition stop layer.

Abstract: A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.

Abstract: The present invention provide a puncture instrument capable of administering (supplying) a drug solution. The puncture instrument includes a puncture tip section (2); a first tubular body (3) connected to the puncture tip section (2) at the distal end; and an outer tubular body (5) at least partially covering the first tubular body (3). The first tubular body (3) is formed to be rotatable around an axis along the longitudinal direction. The first tubular body (3) has an outer diameter smaller than an inner diameter of the outer tubular body (5). A drug solution supply path (5a) is provided on the outside of the first tubular body (3).

Abstract: In an example, the present invention provides a laser fusion system comprising a reactor, a fusion material within an interior region of the reactor, and a high intensity pulse laser generation system configured by a hub and spoke spatial arrangement of laser cavity regions within the reactor.

Abstract: In an example, the present invention provides a high intensity pulse laser generation system. The system has a variety of elements. The system has an optical cavity maintained in a vacuum, e.g., 300 Torr and less. In an example, the optical cavity is configured to increase an intensity of a laser beam comprising a pulse from a first energy power intensity to a second higher energy power intensity propagating on a first optical path configured within the optical cavity by circulating or reciprocating at least a portion of the laser beam.

Abstract: A method for fabricating small size light emitting diodes (LEDs) on high-quality epitaxial crystal layers. III-nitride epitaxial lateral overgrowth (ELO) layers are grown on a substrate using a growth restrict mask. III-nitride device layers are grown on wings of the III-nitride ELO layers, to form island-like III-nitride semiconductor layers. The wings of the III-nitride ELO layers have at least an order of magnitude smaller defect density than the substrate, resulting in superior characteristics for the devices made thereon. Light emitting mesas are etched from the island-like III-nitride semiconductor layers, wherein each of the light emitting mesas corresponds to a device; and a device unit pattern is etched from the island-like III-nitride semiconductor layers, wherein the device unit pattern is comprised of one or more of the light emitting mesas. The device unit pattern including the island-like III-nitride semiconductor layers is then transferred to display panel or a carrier.

Abstract: In an example, the present invention provides a reactor system for a space application. The system has a reactor comprising a fusion material, and at least one satellite system positioned in an orbit above a geographical location of a planet. In an example, the satellite system is operably coupled to the reactor including the fusion material.

Abstract: A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewall thereby increasing a hole concentration in the p-type layer. In one or more examples, the device includes an active region between a first n-type layer and the p-type layer; a second n-type layer on the p-type layer; and a tunnel junction between the second n-type layer and the p-type layer, and the activated p-type layer has a hole concentration characterized by a current density of at least 100 Amps per centimeter square flowing between the first n-type layer and the second n-type layer in response to a voltage of 4 volts or less applied across the first n-type layer and the second n-type layer.

Abstract: A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga2O3.