Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 ?m. A flip chip display device is also disclosed.

Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 ?m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

Abstract: An insertion apparatus includes a flexible tube to be inserted into an insertion target. The flexible tube is divided into segments arranged in series along a central axis. The insertion apparatus also includes a variable stiffness portion that varies a bending stiffness of the flexible tube in units of segments, a detector that detects state information of the flexible tube including velocity information, a calculator that calculates the velocity information of the flexible tube at two portions of the flexible tube based on the state information, and a controller that controls the bending stiffness of the flexible tube in units of segments through the variable stiffness portion based on a velocity ratio calculated based on the velocity information of the two portions.

Abstract: A blood reservoir (20) for storing blood includes a first storage section (21), a second storage section (22), and a third storage section (23) that is provided between the first storage section and the second storage section, and communicates with the first storage section and the second storage section. A volume of the blood reservoir (20) can be adjusted by changing the amount of expansion or contraction of a bellows structure (28) using a bellows adjustment mechanism (83, 93).

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: Laser dazzler devices and methods of using laser dazzler devices are disclosed. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a laser dazzling device includes a plurality of green laser diodes.

Abstract: A blood component separator (1) includes a blood storage vessel (20) that includes a first storage part (21) and a second storage part (22), a slider (30) movable from the first storage part to the second storage part, and a flow path (40f) for communicating an inside and an outside of the storage vessel. When the slider is in the first storage part, the first storage part and the second storage part are in communication with each other. When the slider is inserted into the second storage part, a liquid-tight seal is formed between the slider and the inner peripheral surface of the second storage part and the communication between the first storage part and the second storage part is blocked by the slider. The slider is movable in the second storage part while maintaining the liquid-tight seal between the slider and the inner peripheral surface of the second storage part.

Abstract: The monolithic integration of optically-pumped and electrically-injected III-nitride light-emitting devices. This structure does not involve the growth of p-type layers after an active region for a first III-nitride light-emitting device, and thus avoids high temperature growth steps after the fabrication of the active region for the first III-nitride light emitting device. Since electrical injection in such a structure cannot be possible, a second III-nitride light-emitting device is used to optically pump the first III-nitride light emitting device. This second III-nitride light emitting device emits light at a shorter wavelength region of the optical spectrum than the first III-nitride light emitting device, so that it can be absorbed by the active region of the first III-nitride light-emitting device, which in turn emits light at a longer wavelength region of the optical spectrum than the second III-nitride light emitting device.

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

Abstract: In a flexible tube insertion apparatus, at least one circuit determines whether an S-shape is formed in an insertion section based on a shape information of the insertion section detected by a detector, determines whether an intersection angle between an extension line of a central axis of the insertion section and a tangential line for the insertion section at an inflection point is enlarged or not based on the shape information, and determines whether or not the stiffness variable portions are provided in a position of the S-shape in the insertion section when it is determined that the S-shape is formed and the intersection angle is enlarged. A stiffness controller increases a stiffness of the stiffness variable portions included in the position of the S-shape in accordance with the determination of the circuit.

Abstract: A flexible tube insertion apparatus includes an insertion section, a stiffness variable unit that changes a bending stiffness of the insertion section and a detection unit that detects an advance that is a movement toward a distal end of the insertion section and a retreat that is a movement toward a proximal end of the insertion section. A controller controls the stiffness variable unit to change the bending stiffness of the insertion section to a first bending stiffness when the detection unit has detected the advance of the insertion section, and that controls the stiffness variable unit to change the bending stiffness of the insertion section to a second bending stiffness higher than the first bending when the detection unit has detected the retreat of the insertion section.

Abstract: A brake pedal device includes a pedal bracket, an operation pedal, an intermediate lever, and a coupling link. The pedal bracket includes a first side plate member and a second side plate member secured to a dash panel and arranged at interval in a vehicle width direction, and is fastened and secured with respect to a vehicle body side bracket located on a vehicle rear side by a nut and a bolt at one location. The first side plate member and the second side plate member include a deformation allowing part and a deformation allowing part between a first support shaft located on a rearward side among the first support shaft and a second support shaft, and an attachment/securing part and an attachment/securing part.

Abstract: A flexible tube insertion apparatus includes an insertion section, one or more stiffness variable portion, and a detection unit. The flexible tube insertion apparatus includes a bending information calculator, a main determiner, and a controller that performs control to increase a stiffness of the stiffness variable portion provided in a segment located in a bent part, when the main determiner determines that the bent part is present and the segment provided in the stiffness variable portion is located in the bent part.

Abstract: One embodiment of the present invention is a flexible tube insertion apparatus including a flexible insertion section to be inserted into a subject. The flexible tube insertion apparatus includes an insertion section state detecting device that detects a state of the insertion section necessary for insertion prediction as detection information when the insertion section is inserted into a subject, and at least one circuit that predicts, using the detection information detected by the insertion section state detecting device, a propulsion state of a distal end of the insertion section and a state of the subject when the insertion section is further inserted from the state of the insertion section, and produces an output based on the prediction.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

Abstract: A flexible tube insertion apparatus includes an insertion section including a plurality of segments, a plurality of stiffness variable portions provided in the respective segments and configured to vary stiffness of the respective segments, and a state detector configured to detect a shape of the insertion section. The apparatus includes a state calculator configured to acquire a shape of a tube at a time when the insertion section advances into the tube, and configured to calculate a relative position of the segment to the tube, and a control device configured to control, based on the shape of the tube, the stiffness variable portion provided in the segment which is calculated the relative position to the tube by the state calculator.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: An flexible tube insertion apparatus includes a tubular insertion section including a bending portion and a flexible tube portion, variable stiffness sections to cause a change in a level of a bending stiffness of the flexible tube portion, a variable stiffness control section that controls the change in the bending stiffness by the variable stiffness sections; and a time setting section that sets a time period. The variable stiffness control section causes the bending stiffness of the variable stiffness sections to change in such a manner that the relationship of levels between the bending stiffness of adjacent variable stiffness sections is switched at the set time period when the variable stiffness control section determines that the flexible tube portion is passing through a flexure of the subject.