Abstract: A method and apparatus for growing a Group-III nitride crystal using multiple interconnected reactor vessels to modify growth conditions during the ammonothermal growth of the Group-III nitride crystal, such that, by combining two or more vessels, it is possible to modify the conditions under which the Group-III nitride crystals are grown. In addition, the reactor vessel may use carbon fiber containing materials encapsulating oxide ceramic materials as structural elements to contain the materials for growing the Group-III nitride crystals at pressures or temperatures necessary for growth of the Group-III nitride crystals.

Abstract: Storage system: wherein processor number information includes at least one logical unit number and at least one processor number of storage nodes; wherein transfer list index/processor number information includes a processor number for identifying a processor from among processors of the plurality of storage nodes, and index information for identifying a transfer list including instruction which the processor sends to the protocol processor; wherein a local router determines a first processor from among the processors of the plurality of storage nodes which is to be a transfer destination of a write request based on processor number information in response to the write request from the host computer through the protocol processor; wherein the first processor generates and sends to the protocol processor a first transfer list which includes instruction for processing, and generates first index information which is an index of the first transfer list upon receiving the write request.

Abstract: A threaded portion with thread groove formed and non-threaded portion without the thread groove are prepared on rod-like portion of stud, and non-threaded diameter-increasing portion whose outer diameter is increasing toward thread ridge of screw portion with thread groove formed and non-threaded small diameter portion connecting to small diameter region of non-threaded diameter-increasing portion and having same diameter as that of small diameter region are prepared at threaded portion side edge of non-threaded portion. A holder is provided with stud-receiving hole which receives the rod-like portion, a first locking portion and a second locking portion. The second locking portion is engaged with the non-threaded small diameter portion in a fixedly holding status, and the second locking portion is engaged with the non-threaded diameter-increasing portion in a status that the holder is moved for a predetermined amount in a direction away from the fixedly holding status.

Abstract: A system includes a plurality of flash memory devices, a processor configured to control read/write requests, and a cache memory configured to store data temporarily.

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract: A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

Abstract: A mounting device includes a base member, an attaching mechanism disposed on the base member and configured to detachably attach the base member to a first electronic apparatus, and an accommodating part disposed on the base member and configured to hold a second electronic apparatus placed therein.

Abstract: Storage system: wherein processor number information includes at least one logical unit number and at least one processor number of storage nodes; wherein transfer list index/processor number information includes a processor number for identifying a processor from among processors of the plurality of storage nodes, and index information for identifying a transfer list including instruction which the processor sends to the protocol processor; wherein a local router determines a first processor from among the processors of the plurality of storage nodes which is to be a transfer destination of a write request based on processor number information in response to the write request from the host computer through the protocol processor; wherein the first processor generates and sends to the protocol processor a first transfer list which includes instruction for processing, and generates first index information which is an index of the first transfer list upon receiving the write request.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

Abstract: A storage system including a storage device which includes media for storing data from a host computer, a medium controller for controlling the media, a plurality of channel controllers for connecting to the host computer through a channel and a cache memory for temporarily storing data from the host computer, wherein the media have a restriction on a number of writing times. The storage device includes a bus for directly transferring data from the medium controller to the channel controller.

Abstract: Laser dazzler devices and methods of using laser dazzler devices are disclosed. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a laser dazzling device includes a plurality of green laser diodes.

Abstract: A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract: A high power blue-violet Ill-nitride semi-polar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.