Abstract: A novel method for manufacturing a positive electrode active material is provided. In the method, an acid solution is formed by mixing an aqueous solution containing nickel, cobalt, and manganese with an aqueous solution containing a first additive element; a composite hydroxide containing nickel, cobalt, manganese, and the first additive element is formed by a reaction between the acid solution and an alkaline solution; the composite hydroxide and a lithium source are mixed and heated (first heating) to form a composite oxide; and the composite oxide and a second additive element source are mixed and heated (second heating). The first additive element is at least one of gallium, boron, aluminum, indium, magnesium, and fluorine, and the second additive element is at least one of calcium, gallium, boron, aluminum, indium, magnesium, and fluorine.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side.

Abstract: A composite device with a high security level is provided. A composite device capable of inhibiting unauthorized use favorably is provided. The composite device includes a control portion, a detection portion, an authentication portion, and a memory portion. The detection portion has a function of detecting a touch and a function of obtaining first fingerprint data of a finger touching the detection portion. The authentication portion has a function of executing user authentication processing. The memory portion has a function of retaining second fingerprint data registered in advance. The control portion has a function of bringing a system into an unlocked state when the authentication portion authenticates a user and a function of comparing the first fingerprint data obtained by the detection portion and the second fingerprint data when the detection portion detects a touch, and bringing the system into a locked state in the case where those data do not match.

Abstract: A novel storage device and a novel semiconductor device are provided. In the storage device, a cell array including a plurality of memory cells is stacked above a control circuit, and the cell array operates separately in a plurality of blocks. Furthermore, a plurality of electrodes are included between the control circuit and the cell array. The electrode is provided for a corresponding block to overlap with the block, and a potential of the electrode can be changed for each block. The electrode has a function of aback gate of a transistor included in the memory cell, and a potential of the electrode is changed for each block, whereby the electrical characteristics of the transistor included in the memory cell can be changed. Moreover, the electrode can reduce noise caused in the control circuit.

Abstract: An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Abstract: A display device having a narrow bezel region is provided. The display device includes a first layer and a second layer. The first layer includes a source driver and one part of a sensor, and the second layer includes a gate driver, a plurality of pixels, and the other part of the sensor. The plurality of pixels include a pixel in which a light-emitting element emits light and a pixel having a function of the gate driver. An opening portion where the one part of the sensor is formed and a first terminal connected to the source driver are provided on the top surface of the first layer, and a second terminal is provided on the opposite side of the surface where the pixels included in the second layer are arranged. The first terminal is bonded to the second terminal, so that they are electrically connected to each other and the sensor is formed.

Abstract: A novel light-emitting device that is highly convenient, useful, or reliable is provided. A novel functional panel that is highly convenient, useful, or reliable is provided. The light-emitting device includes an insulating film, a group of structure bodies, a layer containing a light-emitting material, a first electrode, and a second electrode. The group of structure bodies includes a structure body and a different structure body, a first distance is provided between the different structure body and the structure body, the insulating film includes a first surface, the structure body includes a sidewall, the sidewall forms a first angle with the first surface, and the first angle is greater than 0° and less than or equal to 90°.

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

Abstract: A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced.

Abstract: A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.

Abstract: An electronic device with reduced power consumption is provided. A multifunction electronic device that is easily reduced in weight or size is provided. A composite device includes a sensor device and a display device. The sensor device includes a first communication portion and a sensor portion and can be worn on a human body. The display device includes a display portion, a second communication portion, and a control portion. The first communication portion has a function of transmitting a signal including information obtained by the sensor portion. The second communication portion has a function of receiving the signal. The control portion has a function of returning from a resting state in accordance with the signal. The control portion has a function of generating first image data on the basis of the information and outputting the first image data to the display portion. The display portion has a function of displaying an image on the basis of the first image data.

Abstract: An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

Abstract: A semiconductor device with low power consumption is provided. The semiconductor device includes a power management unit, a CPU core, and a memory device, the power management unit includes a power switch and a power controller, and the memory device includes a working memory and a long-term memory storage portion. The power switch has a function of controlling supply of a power supply voltage to the CPU core and the memory device, and the power controller has a function of controlling operation of the power switch. The CPU core has a function of transmitting a timing of stopping the supply of the power supply voltage to the power controller, and the memory device has a function of saving data retained in the working memory to the long-term memory storage portion before the supply of the power supply voltage is stopped by the power switch. Transistors included in each of the power management unit and the CPU core are preferably Si transistors.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a silicon substrate including a first circuit, a first element layer including a second circuit, and a second element layer including a third circuit. The first circuit includes a first transistor. The second circuit includes a second transistor. The third circuit includes a memory cell. The memory cell includes a third transistor and a capacitor. The first element layer and the second element layer constitute a stacked block stacked and provided in a direction perpendicular or substantially perpendicular to a surface of the silicon substrate. A plurality of stacked blocks are stacked and provided in the direction perpendicular or substantially perpendicular to the surface of the silicon substrate. Each of the plurality of stacked blocks includes a first wiring provided in the direction perpendicular or substantially perpendicular to the surface of the silicon substrate.

Abstract: A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.

Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Abstract: A display device capable of performing image processing is provided. A memory node is provided in each pixel included in the display device. An intended correction data is held in the memory node. The correction data is calculated by an external device and written into each pixel. The correction data is added to image data by capacitive coupling, and the resulting data is supplied to a display element. Thus, the display element can display a corrected image. The correction enables image upconversion, for example.

Abstract: A display device having a long lifetime is provided. The display device includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first electrode and a common electrode. The second light-emitting device includes a second electrode and a common electrode. The first light-emitting device includes a first light-emitting layer and an electron-transport layer in this order from a side of one of the first electrode and the common electrode which functions as an anode. The second light-emitting device includes a second light-emitting layer between the second electrode and the common electrode. The first light-emitting layer contains a first organic compound emitting light of a first color. The second light-emitting layer contains a second organic compound emitting light of a second color. The electron-transport layer contains a third organic compound and a first substance. The third organic compound is an electron-transport material.