Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Forster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Forster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with the longest-wavelength-side local maximum peak of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

Abstract: A semiconductor device that can be scaled down or highly integrated is to be provided. The semiconductor device includes a first conductor, a second conductor, a first insulator, a first transistor over the first insulator, and a second insulator over the first transistor. The first transistor includes a first metal oxide, a third conductor and a fourth conductor electrically connected to the first metal oxide, a third insulator over the first metal oxide, and a fifth conductor over the third insulator. The top surface of the fifth conductor includes a region in contact with the second insulator. The first conductor includes a portion positioned on an inner side of an opening of the first insulator, a region in contact with the side surface of the third conductor, and a portion positioned on an inner side of an opening of the second insulator.

Abstract: A semiconductor device that occupies a small area is provided. The semiconductor device includes a first transistor including a first oxide semiconductor; a second transistor including a second oxide semiconductor; a capacitor element; a first insulator; and a first conductor in contact with a source or a drain of the second transistor. The capacitor element includes a second conductor, a third conductor, and a second insulator. The first transistor, the second transistor, and the first conductor are placed to be embedded in the first insulator. The second conductor is placed in contact with a top surface of the first conductor and a top surface of a gate of the first transistor. The second insulator is placed over the second conductor and the first insulator. The third conductor is placed to cover the second conductor with the second insulator therebetween.

Abstract: The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 ?m is 1 aA or less.

Abstract: An electronic device comprising a first display panel having a touch function and a second display panel having a touch function is provided. A first battery and a second battery are provided in a housing of the electronic device. The housing comprises a transmitting and receiving portion including an antenna configured to wirelessly charge one of the first battery and the second battery. The first display panel comprises a first display portion and the second display panel comprises a second display portion. An area of the first display portion is larger than an area of the second display portion and an area of the first battery is larger than an area of the second battery.

Abstract: A highly reliable display apparatus is provided. In an EL display apparatus including a specific pixel having a function of adding data, a storage node is provided in the pixel, and first data can be held in the storage node. In the pixel, second data is added to the first data through capacitive coupling, whereby third data can be generated. A light-emitting device operates in accordance with the third data. In the pixel, a light-emitting device that requires a high voltage for light emission or a light-emitting device to which application of a high voltage is preferred is provided.

Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.

Abstract: A highly convenient display system is provided. A display system that enables a screen to be operated easily with a laser pointer is provided. A display system that enables a screen to be operated by a large number of people is provided. The display system includes a light-emitting apparatus and a display device. The light-emitting apparatus includes a means for emitting visible laser light and a means for emitting invisible light. The display device includes a display unit including a means for displaying an image and a means for obtaining positional information on a portion irradiated with the visible light, and a means for receiving the invisible light. The display system has a function of performing processing in accordance with the positional information when the invisible light is received.

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract: A semiconductor device with reduced power consumption is provided. With three transistors, potentials of two nodes are switched and a voltage is detected. One of a source and a drain of a first transistor is electrically connected to a first terminal. The other of the source and the drain of the first transistor is electrically connected to a non-inverting input of a comparator through a first node. One of a source and a drain of a second transistor is electrically connected to a second terminal. The other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of a third transistor through a second node. The other of the source and the drain of the third transistor is electrically connected to a third terminal. A first capacitor is provided between the first node and the second node. An inverting input of the comparator is electrically connected to a fourth terminal. An output of the comparator is electrically connected to a fifth terminal.

Abstract: The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first transistor and a second transistor over an insulating surface; the first transistor and the second transistor share a metal oxide and a first conductor over the metal oxide; the first transistor includes a second conductor and a first insulator over the metal oxide and a third conductor over the first insulator; the second transistor includes a fourth conductor and a second insulator over the metal oxide and a fifth conductor over the second insulator; the first insulator is positioned in a region between the first conductor and the second conductor; the metal oxide and the third conductor overlap with each other with the first insulator therebetween; the second insulator is positioned in a region between the first conductor and the fourth conductor; and the metal oxide and the fifth conductor overlap with each other with the second insulator therebetween.

Abstract: A semiconductor device with a high operation speed is provided. The semiconductor device includes a second oxide semiconductor; a second conductor; a third conductor; a first insulator over the second oxide semiconductor, the second conductor, and the third conductor; a second insulator and a fourth conductor in a first opening portion of the first insulator; and a third insulator and a fifth conductor in a second opening portion of the first insulator. The second oxide semiconductor is formed by removing a region covering the top surface of a columnar insulator from a first oxide semiconductor formed to cover the columnar insulator. The second conductor and the third conductor are formed by sequentially forming a first conductor and a first insulator over the second oxide semiconductor and removing a region overlapping with the second opening portion of the first insulator from the first conductor to expose the second oxide semiconductor.

Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

Abstract: Provided is a positive electrode for a secondary battery, which has a small change in a crystal structure due to charging and discharging and has excellent cycle performance. The positive electrode for a secondary battery includes n positive electrode active material layers (n is an integer greater than or equal to 2), n?1 separation layer(s), and a positive electrode current collector layer. The positive electrode active material layers and the separation layer(s) are alternately stacked. The positive electrode active material layer contains lithium, cobalt, and oxygen. The separation layer contains a titanium compound. Titanium oxide and titanium nitride are preferable as the titanium compound, and titanium oxide is particularly preferable.