Abstract: An information processor includes a plurality of first processing units; and a direct memory access unit coupled to at least one first processing unit. The information processor includes at least one first memory unit coupled to the direct memory access unit. The first memory unit includes a second memory unit. The first memory unit includes a second processing unit for processing data stored in the second memory unit. The second memory unit is adapted to be accessed by at least one first processing unit through the direct memory access unit, and the second processing unit is separate from the plurality of first processing units and the direct memory access unit. The first memory unit includes at least one register to be accessed by the at least one first processing unit and the second processing unit. The second processing unit is for receiving operation instructions from the at least one register.

Abstract: An integrated circuit includes a circuit and a guard ring. The circuit is over a substrate. The guard ring surrounds the circuit and includes a staggered line. The staggered line comprises a first zigzag line and a second zigzag line. The first zigzag line comprises interconnections formed in at least two GDS layers. The second zigzag line comprises interconnections formed in at least two GDS layers. The first zigzag line and the second zigzag line form a first quadrangle and a second quadrangle.

Abstract: An information processor includes a central processing unit core and a direct memory access unit connected to the central processing unit core. The information processor further includes at least one tightly coupled smart memory unit connected to the central processing unit core. The at least one tightly coupled smart memory unit includes a memory unit, and a local processing unit adapted to process data stored in the memory unit, wherein the memory unit is adapted to be accessed by the central processing unit core and the local processing unit, and the local processing unit is separate from the central processing unit core and the direct memory access unit.

Abstract: A package structure includes a plurality of die carriers identical to each other. The respective features in each of the plurality of die carriers vertically overlap corresponding features in other ones of the plurality of die carriers. Each of the plurality of die carriers includes a plurality of through-substrate vias (TSVs) including a plurality of data buses. The plurality of die carriers is stacked and electrically connected to each other through the plurality of TSVs. The package structure further includes a plurality of device dies. Each of the plurality of device dies is bonded to one of the plurality of die carriers. Each of the plurality of data buses is configured to dedicate to data transmission of one of the plurality of device dies.

Abstract: An apparatus comprises a die comprising a plurality of switch/router circuits; and a plurality of additional dies. Each respective one of the plurality of additional dies comprises: a respective network interface, which is electrically coupled to a respective one of the plurality of switch/router circuits; and a respective interconnection test logic, which is electrically coupled to the respective network interface and the interconnection test logic in at least one other one of the plurality of additional dies.

Abstract: Structures and methods are provided for fabricating a ring oscillator including a plurality of stages. An example multi-layer structure includes a first device layer, a second device layer, and an inter-level connection structure. The first device layer includes a first transistor structure associated with a first stage of a ring oscillator. The second device layer is formed on the first device layer and includes a second transistor structure associated with a second stage of the ring oscillator. Further, the first inter-level connection structure includes one or more first conductive materials and is configured to electrically connect to the first transistor structure and the second transistor structure.

Abstract: An integrated circuit includes a process voltage temperature (PVT) effect transducer responsive to a PVT effect, a PVT effect quantifier coupled to the PVT effect transducer and configured to quantify the PVT effect to provide an output, and a bias controller configured to receive the output of the PVT effect quantifier and provide a bias voltage for a substrate of an NMOS or a PMOS transistor. The bias controller is configured to compare the output received from the PVT effect quantifier to a threshold value, and decrease or increase the bias voltage depending on whether the output is higher or lower than the threshold value.

Abstract: A package structure includes a networking unit including a plurality of switches/routers and a plurality of network interface units coupled to the plurality of switches/routers, and an interposer including a plurality of metal connections. The interposer is substantially free from functional elements built therein. A functional element is outside of, and bonded onto, the interposer, wherein the functional element is electrically coupled to the networking unit through the plurality of metal connections.

Abstract: An integrated circuit die stack comprises a first die coupled with a second die. The first die has a first memory volume. The second die has a second memory volume different from the first memory volume. Each of the first and second dies comprises a functional circuitry and a programmable array coupled with the functional circuitry. The programmable arrays in the first and second dies are programmed to bypass one of the first die or the second die having the smaller of the first memory volume or the second memory volume at a first time period.

Abstract: An apparatus comprises a first integrated circuit (IC) die, and a second IC die stacked on the first IC die. The first and second IC dies are operational independently of each other. Each respective one of the first and second IC dies has: at least one circuit for performing a function; an operation block coupled to selectively disconnect the circuit from power; and an output enable block coupled to selectively connect the circuit to at least one data bus.

Abstract: A package structure includes a networking unit including a plurality of switches/routers and a plurality of network interface units coupled to the plurality of switches/routers, and an interposer including a plurality of metal connections. The interposer is substantially free from functional elements built therein. A functional element is outside of, and bonded onto, the interposer, wherein the functional element is electrically coupled to the networking unit through the plurality of metal connections.

Abstract: A circuit includes a central processing unit (CPU), which includes a first memory block having a first power domain; and a core block signally connected to the first memory block and having a second power domain disconnected from the first power domain.

Abstract: A package structure includes a plurality of die carriers identical to each other. The respective features in each of the plurality of die carriers vertically overlap corresponding features in other ones of the plurality of die carriers. Each of the plurality of die carriers includes a plurality of through-substrate vias (TSVs) including a plurality of data buses. The plurality of die carriers is stacked and electrically connected to each other through the plurality of TSVs. The package structure further includes a plurality of device dies. Each of the plurality of device dies is bonded to one of the plurality of die carriers. Each of the plurality of data buses is configured to dedicate to data transmission of one of the plurality of device dies.

Abstract: A circuit includes a central processing unit (CPU), which includes a first memory block having a first power domain; and a core block signally connected to the first memory block and having a second power domain disconnected from the first power domain.

Abstract: An integrated circuit die stack comprises a first die coupled with a second die. The first die has a first memory volume. The second die has a second memory volume different from the first memory volume. Each of the first and second dies comprises a functional circuitry and a programmable array coupled with the functional circuitry. The programmable arrays in the first and second dies are programmed to bypass one of the first die or the second die having the smaller of the first memory volume or the second memory volume at a first time period.

Abstract: Structures and methods are provided for fabricating a ring oscillator including a plurality of stages. An example multi-layer structure includes a first device layer, a second device layer, and an inter-level connection structure. The first device layer includes a first transistor structure associated with a first stage of a ring oscillator. The second device layer is formed on the first device layer and includes a second transistor structure associated with a second stage of the ring oscillator. Further, the first inter-level connection structure includes one or more first conductive materials and is configured to electrically connect to the first transistor structure and the second transistor structure.

Abstract: A shared loop filter includes an input port configured to selectively receive a first input from a first charge pump. The first charge pump is connected to a first phase locked loop (PLL) in a first die. The input port is further configured to selectively receive a second input from a second charge pump, the second charge pump connected to a second PLL in a second die separate from the first die. The shared loop filter further includes an output port configured to selectively provide an output to a first voltage controlled oscillator (VCO). The first VCO is connected to the first PLL. The output port is further configured to selectively output a second output to a second VCO. The second VCO is connected to the second PLL.

Abstract: A package structure includes a plurality of die carriers identical to each other. The respective features in each of the plurality of die carriers vertically overlap corresponding features in other ones of the plurality of die carriers. Each of the plurality of die carriers includes a plurality of through-substrate vias (TSVs) including a plurality of data buses. The plurality of die carriers is stacked and electrically connected to each other through the plurality of TSVs. The package structure further includes a plurality of device dies. Each of the plurality of device dies is bonded to one of the plurality of die carriers. Each of the plurality of data buses is configured to dedicate to data transmission of one of the plurality of device dies.

Abstract: A circuit includes a central processing unit (CPU), which includes a first memory block having a first power domain; and a core block signally connected to the first memory block and having a second power domain disconnected from the first power domain.

Abstract: An integrated circuit die stack comprises a first die and a second die connected to each other. Each of the first and second dies comprise a functional circuitry, a plurality of first contacts on a first surface of the respective die, a plurality of second contacts on a second surface of the respective die, and a programmable array coupled to the functional circuitry and the plurality of first and second contacts. The programmable array includes a plurality of programmable connection elements in the first and second dies. The programmable connection elements are programmed to bypass one of the first and second dies.