Abstract: A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.

Abstract: The application is related to a UV LED package structure for improving light extraction efficiency. An UV LED chip is set on a substrate with an anti-flare film for increasing upward light extraction to concentrate the emitted light by an optical element. Because no glue is filled between the UV LED chip and the optical element, it will be prevented the glue from spoiling and deteriorating by the UV light from the UV LED chip. Thereby, the UV LED package structure can prevent from the light performance reducing.

Abstract: A light-emitting diode (LED) assembly comprises a plurality of LED cells and a driving circuit. Each of the LED cells includes an LED and a transistor. The LED includes first and second LED layers and an LED electrode. The first LED layer includes a III-V compound semiconductor. The second LED layer is over the first LED layer. The LED electrode is over the second LED layer. The first LED layer is free of an LED electrode. The transistor includes a drain region connected to the first LED layer. The driving circuit is configured to drive the LED cells.

Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

Abstract: A light-emitting diode (LED) assembly comprises a plurality of LED cells and a driving circuit. Each of the LED cells includes an LED and a transistor. The LED includes first and second LED layers and an LED electrode. The first LED layer includes a III-V compound semiconductor. The second LED layer is over the first LED layer. The LED electrode is over the second LED layer. The first LED layer is free of an LED electrode. The transistor includes a drain region connected to the first LED layer. The driving circuit is configured to drive the LED cells.

Abstract: A light source assembly includes a plurality of cells and a driving circuit. Each of the cells includes a transistor and a light source. The transistor includes a drain region that serves as a cathode of the light source. The driving circuit is configured to drive the cell. An optical sensor cell and a method for manufacturing thereof are also disclosed.

Abstract: A light source module includes a lighting structure, a light diffusing layer, a wavelength converting layer, and a cover plate. The lighting structure includes a plurality of light emitting elements that are all blue-light emitting elements. The light diffusing layer is disposed on the lighting structure, the wavelength converting layer is disposed on the light diffusing layer, and the cover plate is disposed on the wavelength converting layer.

Abstract: The application is related to a UV LED package structure for improving light extraction efficiency. An UV LED chip is set on a substrate with an anti-flare film for increasing upward light extraction to concentrate the emitted light by an optical element. Because no glue is filled between the UV LED chip and the optical element, it will be prevented the glue from spoiling and deteriorating by the UV light from the UV LED chip. Thereby, the UV LED package structure can prevent from the light performance reducing.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip and the light guiding member coats the color converting layer. The planar or non-planar reflecting member is arranged over the light guiding member. The reflecting member faces toward the light emitting chip and changes the range of illumination of the light emitted by the light emitting chip. The reflecting member can be arranged on a side of the color converting layer and light can be irradiated towards the exterior of the light emitting diode assembly structure.

Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesse

Abstract: A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip and the light guiding member coats the color converting layer. The planar or non-planar reflecting member is arranged over the light guiding member. The reflecting member faces toward the light emitting chip and changes the range of illumination of the light emitted by the light emitting chip. The reflecting member can be arranged on a side of the color converting layer and light can be irradiated towards the exterior of the light emitting diode assembly structure.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesse