Abstract: The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.

Abstract: A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: A light emitting device is provided with a growing base having specific geometry to prevent delamination between the encapsulant and the growing base, and thereby enhance structural reliability of the light emitting device. Furthermore, the light emitting efficiency as well as uniformity of light output of the light emitting device can be improved by forming the side surface of the growing base with at least a curved portion or slanted portion, and uneven structures can be formed on the curved portion or slanted portion to further improve the uniformity of light output. Furthermore, the light emitting diode chips can be fabricated by taking batch processing on the growing substrate, as provided in the wafer-level structure, with the advantages of saving cost, improving yield, etc.

Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation comprising a bottom part extending downward to reach the first semiconductor layer and exposing the first semiconductor layer; a first metal layer disposed on the second semiconductor layer, connecting to the first semiconductor layer at the bottom part of the indention; and an first insulating layer deposited on the second semiconductor layer and between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation.

Abstract: A light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED chips are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED chips. Each of the LED chips includes a first electrode and a second electrode. Light emitted from at least one of the LED chips passes through the transparent substrate and emerges from the second main surface. An illumination device includes the light emitting element and a supporting base. The light emitting element is disposed on the supporting base, and an angle is formed between the light emitting element and the supporting base.

Abstract: A light-emitting device including a first substrate, a second substrate disposed above the first substrate a barrier structure disposed on the first substrate and surrounding the second substrate, at least one light-emitting semiconductor unit disposed on the second substrate and a glue disposed between the light-emitting semiconductor unit and the barrier structure is provided. The barrier structure is separated from the second substrate by a distance R in a direction parallel to the first substrate. At least one portion of the glue is filled into the distance R between the barrier structure and the second substrate.

Abstract: A capacitor structure is provided, which includes a conductive substrate, a first dielectric layer, and a first metal layer. The conductive substrate includes a first surface and at least one first concave located on the first surface. The first dielectric layer covers the first surface and the first concave. The first metal layer covers the first dielectric layer, wherein the first dielectric layer and the first metal layer respectively have concave structures corresponding to the first concave. A stack-type capacitor structure is also provided.

Abstract: The present invention relates to a light emitting apparatus comprising at least one light emitting device and a support mechanism. The light emitting device includes a transparent substrate which light can pass through; at least one LED chip emitting light omni-directionally is disposed on one surface of the substrate, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. The support mechanism is coupled to the light emitting device; a first angle is formed between the substrate and the support mechanism. According to the present invention, the light emitting apparatus using LED chips can provide sufficient lighting intensity and uniform lighting performance.