Abstract: A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip and the light guiding member coats the color converting layer. The planar or non-planar reflecting member is arranged over the light guiding member. The reflecting member faces toward the light emitting chip and changes the range of illumination of the light emitted by the light emitting chip. The reflecting member can be arranged on a side of the color converting layer and light can be irradiated towards the exterior of the light emitting diode assembly structure.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesse

Abstract: A light source module includes a lighting structure, a light diffusing layer, a wavelength converting layer, and a cover plate. The lighting structure includes a plurality of light emitting elements that are all blue-light emitting elements. The light diffusing layer is disposed on the lighting structure, the wavelength converting layer is disposed on the light diffusing layer, and the cover plate is disposed on the wavelength converting layer.

Abstract: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; one or a plurality of indentations, comprising a bottom part extending downward through the second semiconductor layer and the active layer to reach the first semiconductor layer and exposing the first semiconductor layer; a plurality of metal layers, comprising a first metal layer connecting to the first semiconductor layer through the bottom part, and a second metal layer deposited on the first metal layer; and an insulating layer formed between the first and the second metal layers, disposed on the indentation and covering the first metal layer, wherein the second metal layer comprises one or a plurality of recesses at a top surface thereof corresponding to the one or plurality of indentations.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A headlamp module comprises a connecting base, a substrate, and at least two edge-type light emitting diode (LED) units. The at least two edge-type LED units are mounted to opposite surfaces of the substrate facing away from each other. Each edge-type LED unit comprises an LED chip, a wavelength converting layer, and a light reflecting layer. The LED chip comprises a bottom surface, a light emitting surface facing away from the bottom surface, and first sidewalls. The wavelength converting layer covers the light emitting surface and the first sidewalls. The wavelength converting layer converts emitted light to a desired range of wavelengths. The light reflecting layer reflects the converted light toward the second sidewalls, thus expanding the angle and brightness of light around the headlamp module and avoiding an unlit or dark area immediately around the headlamp module.

Abstract: A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: The present invention provides a semiconductor light-emitting module and a semiconductor LED chip thereof. The semiconductor LED chip includes a semiconductor light-emitting structure, a light-guiding structure layer, and a light-reflecting structure layer. The semiconductor light-emitting structure includes a light-emitting layer for generating a projection light source. The light-guiding structure layer is connected to the semiconductor light-emitting structure. The light-reflecting structure layer is connected to the light-guiding structure layer. The projection light source generated by the light-emitting layer is projected into the light-guiding structure layer and onto the light-reflecting structure layer. The projection light source is guided and reflected by matching the light-guiding structure layer and the light-reflecting structure layer to form a wide-angle light source that is projected outwardly from an outer surface of the light-guiding structure layer.

Abstract: A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Abstract: A light emitting device includes a light emitting chip, a reflecting cup arranged on a side of the light emitting chip, and a package encapsulating the light emitting chip and the reflecting cup. The light emitting chip includes a first light emitting surface and a second light emitting surface coupled to the first light emitting surface. The reflecting cup has an inner surface facing the second light emitting surface of the light emitting chip. The reflecting cup arranges around a periphery of the second light emitting surface. The inner surface of the reflecting cup is a multifocal paraboloid. The multifocal paraboloid includes multistage paraboloids. The corresponding focus points of the multistage paraboloids are symmetrically distributed on the first light emitting surface of the light emitting chip.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: The present invention provides a light-emitting diode (LED) package structure and the method for manufacturing the same. First, a ceramic substrate is provided. Then, an ultraviolet (UV) LED chip, a light-guiding layer, and a metal reflective layer are disposed on the substrate sequentially. By means of the metal reflective layer, the emission light of the UV LED from the light-emitting side is reflected laterally and thus making the UV LED package structure output a plane light source.

Abstract: A light source module includes a light guide plate, a reflecting film, and a plurality of edge-type light emitting diode (LED) units. Grooves are defined in a lower surface of the light guide plate. The reflecting film is below the lower surface and covers the entire lower surface and the grooves. An air gap is defined between the reflecting film and the lower surface. The edge-type LED units are located in the grooves. Each edge-type LED unit includes an LED chip, a wavelength converting layer, and a light reflecting layer. Light emitted is converted by the wavelength converting layer, reflected towards sidewalls of the wavelength converting layer, and transmitted to the lower surface. The reflecting film reflects light that enters the air gap towards an upper surface of the light guide plate, enabling uniform emission of light from the upper surface.

Abstract: A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip and the light guiding member coats the color converting layer. The planar or non-planar reflecting member is arranged over the light guiding member. The reflecting member is faced towards the light emitting chip and changes the range of illumination of the light emitted by the light emitting chip. The reflecting member can be arranged on a side of the color converting layer and light can be irradiated towards the exterior of the light emitting diode assembly structure.

Abstract: A light source module includes a light guide plate, a reflecting film, and a plurality of edge-type light emitting diode (LED) units. Grooves are defined in a lower surface of the light guide plate. The reflecting film is below the lower surface and covers the entire lower surface and the grooves. An air gap is defined between the reflecting film and the lower surface. The edge-type LED units are located in the grooves. Each edge-type LED unit includes an LED chip, a wavelength converting layer, and a light reflecting layer. Light emitted is converted by the wavelength converting layer, reflected towards sidewalls of the wavelength converting layer, and transmitted to the lower surface. The reflecting film reflects light that enters the air gap towards an upper surface of the light guide plate, enabling uniform emission of light from the upper surface.