Patents by Inventor Simon Chooi
Simon Chooi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050032392Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.Type: ApplicationFiled: September 16, 2004Publication date: February 10, 2005Inventors: Luona Goh, Simon Chooi, Siew Toh, Tong Tay
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Patent number: 6846899Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:Type: GrantFiled: October 1, 2002Date of Patent: January 25, 2005Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
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Patent number: 6835989Abstract: Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Oxygen ions are implanted into the metal layer in one active area to form an implanted metal layer which is oxidized to form a metal oxide layer. Thereafter, the metal layer and the metal oxide layer are patterned to form a metal gate in one active area and a metal oxide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal oxide gates wherein the oxide concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate.Type: GrantFiled: December 16, 2003Date of Patent: December 28, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Wenhe Lin, Mei-Sheng Zhou, Kin Leong Pey, Simon Chooi
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Patent number: 6821888Abstract: A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.Type: GrantFiled: February 13, 2002Date of Patent: November 23, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Yakub Aliyu, Simon Chooi, Meisheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy
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Publication number: 20040227247Abstract: Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.Type: ApplicationFiled: November 21, 2003Publication date: November 18, 2004Applicant: CHARTERED SEMICONDUCTOR MANFACTURING LTD.Inventors: Simon Chooi, Yakub Aliyu, Mei Sheng Zhou, John Leonard Sudijono, Subbash Gupta, Sudipto Ranendra Roy, Paul Kwok Keung Ho, Yi Xu
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Patent number: 6813796Abstract: A new apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface.Type: GrantFiled: February 3, 2003Date of Patent: November 9, 2004Assignee: Chartered SemiconductorInventors: Sudipto Ranendra Roy, Subhash Gupta, Simon Chooi, Xu Yi, Yakub Aliyu, Mei Sheng Zhou, John Leonard Sudijono, Paul Kwok Keung Ho
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Publication number: 20040217429Abstract: Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Silicon ions are implanted into the metal layer in one active area to form an implanted metal layer which is silicided to form a metal silicide layer. Thereafter, the metal layer and the metal silicide layer are patterned to form a metal gate in one active area and a metal silicide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal silicide gates wherein the silicon concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate.Type: ApplicationFiled: May 25, 2004Publication date: November 4, 2004Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Wenhe Lin, Mei-Sheng Zhou, Kin Leong Pey, Simon Chooi
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Patent number: 6797605Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.Type: GrantFiled: July 26, 2001Date of Patent: September 28, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
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Patent number: 6762085Abstract: A method of fabricating a CMOS device with reduced processing costs as a result of a reduction in photolithographic masking procedures, has been developed. The method features formation of L shaped silicon oxide spacers on the sides of gate structures, with a vertical spacer component located on the sides of the gate structure, and with horizontal spacer components located on the surface of the semiconductor substrate with a thick horizontal spacer component located adjacent to the gate structures, while a thinner horizontal spacer component is located adjacent to the thicker horizontal spacer component.Type: GrantFiled: October 1, 2002Date of Patent: July 13, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Jia Zhen Zheng, Soh Yun Siah, Liang Choo Hsia, Eng Hua Lim, Simon Chooi, Chew Hoe Ang
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Publication number: 20040132239Abstract: Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Oxygen ions are implanted into the metal layer in one active area to form an implanted metal layer which is oxidized to form a metal oxide layer. Thereafter, the metal layer and the metal oxide layer are patterned to form a metal gate in one active area and a metal oxide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal oxide gates wherein the oxide concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate.Type: ApplicationFiled: December 16, 2003Publication date: July 8, 2004Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Wenhe Lin, Mei-Sheng Zhou, Kin Leong Pey, Simon Chooi
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Publication number: 20040132296Abstract: Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Oxygen ions are implanted into the metal layer in one active area to form an implanted metal layer which is oxidized to form a metal oxide layer. Thereafter, the metal layer and the metal oxide layer are patterned to form a metal gate in one active area and a metal oxide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal oxide gates wherein the oxide concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate.Type: ApplicationFiled: December 16, 2003Publication date: July 8, 2004Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Wenhe Lin, Mei-Sheng Zhou, Kin Leong Pey, Simon Chooi
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Patent number: 6750519Abstract: Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Silicon ions are implanted into the metal layer in one active area to form an implanted metal layer which is silicided to form a metal silicide layer. Thereafter, the metal layer and the metal silicide layer are patterned to form a metal gate in one active area and a metal silicide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal silicide gates wherein the silicon concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate.Type: GrantFiled: October 8, 2002Date of Patent: June 15, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Wenhe Lin, Mei-Sheng Zhou, Kin Leong Pey, Simon Chooi
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Patent number: 6730591Abstract: A method of forming interconnect structures in a semiconductor device, comprising the following steps. A semiconductor structure is provided. In the first embodiment, at least one metal line is formed over the semiconductor structure. A silicon-rich carbide barrier layer is formed over the metal line and semiconductor structure. Finally, a dielectric layer, that may be fluorinated, is formed over the silicon-rich carbide layer. In the second embodiment, at least one fluorinated dielectric layer, that may be fluorinated, is formed over the semiconductor structure. The dielectric layer is patterned to form an opening therein. A silicon-rich carbide barrier layer is formed within the opening. A metallization layer is deposited over the structure, filling the silicon-rich carbide barrier layer lined opening. Finally, the metallization layer may be planarized to form a planarized metal structure within the silicon-rich carbide barrier layer lined opening.Type: GrantFiled: July 1, 2002Date of Patent: May 4, 2004Assignees: Chartered Semiconductor Manufactoring Ltd., Institute of MicroelectronicsInventors: Licheng Han, Xu Yi, Simon Chooi, Mei Sheng Zhou, Joseph Zhifeng Xie
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Publication number: 20040082169Abstract: This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically to the formation of single or dual damascene interconnects using a barrier metal layer of WNx or TaNx, deposited by plasma enhanced chemical vapor deposition (PECVD) using metal carbonyl precursors. By using a chemical vapor deposition (CVD) process with these alternate carbonyl precursors, many of the problems are solved, i.e., conformal coverage, gas phase particle generation, and incorporation of halogens or carbon into the film.Type: ApplicationFiled: October 29, 2002Publication date: April 29, 2004Applicant: Chartered Semiconductor Manufacturing Ltd.Inventors: Simon Chooi, Mei Sheng Zhou, Subhash Gupta
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Patent number: 6720204Abstract: A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.Type: GrantFiled: April 11, 2002Date of Patent: April 13, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: John Leonard Sudijono, Yakub Aliyu, Mei Sheng Zhou, Simon Chooi, Subhash Gupta, Sudipto Ranendra Roy, Paul Kwok Keung Ho, Yi Xu
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Publication number: 20040065930Abstract: Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Silicon ions are implanted into the metal layer in one active area to form an implanted metal layer which is silicided to form a metal silicide layer. Thereafter, the metal layer and the metal silicide layer are patterned to form a metal gate in one active area and a metal silicide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal silicide gates wherein the silicon concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate.Type: ApplicationFiled: October 8, 2002Publication date: April 8, 2004Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.Inventors: Wenhe Lin, Mei-Sheng Zhou, Kin Leong Pey, Simon Chooi
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Publication number: 20040068082Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: 1Type: ApplicationFiled: October 1, 2002Publication date: April 8, 2004Applicant: Chartered Semiconductor Manufacturing Ltd.Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
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Publication number: 20040063264Abstract: A method of fabricating a CMOS device with reduced processing costs as a result of a reduction in photolithographic masking procedures, has been developed. The method features formation of L shaped silicon oxide spacers on the sides of gate structures, with a vertical spacer component located on the sides of the gate structure, and with horizontal spacer components located on the surface of the semiconductor substrate with a thick horizontal spacer component located adjacent to the gate structures, while a thinner horizontal spacer component is located adjacent to the thicker horizontal spacer component.Type: ApplicationFiled: October 1, 2002Publication date: April 1, 2004Applicant: Chartered Semiconductor Manufacturing Ltd.Inventors: Jia Zhen Zheng, Soh Yun Siah, Liang Choo Hsia, Eng Hua Lim, Simon Chooi, Chew Hoe Ang
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Patent number: 6705512Abstract: A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.Type: GrantFiled: March 15, 2002Date of Patent: March 16, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kwok Keung Paul Ho, Simon Chooi, Yi Xu, Yakub Aliyu, Mei Sheng Zhou, John Leonard Sudijono, Subhash Gupta, Sudipto Ranendra Roy
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Patent number: 6692579Abstract: A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semiconductor structure is lowered into a vapor blanket in a thermal gradient cleaning chamber at atmospheric pressure formed by heating a liquid cleaning agent below the vapor blanket and cooling the liquid cleaning agent above the vapor blanket causing it to condense and return to the bottom of the thermal gradient cleaning chamber. The semiconductor structure is then raised above the vapor blanket and the cleaning agent condenses on all of the surfaces of the semiconductor structure removing contaminants and is returned to the bottom of the chamber by gravity.Type: GrantFiled: January 19, 2001Date of Patent: February 17, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Sudipto Ranendra Roy, Yi Xu, Simon Chooi, Yakub Aliyu, Mei Sheng Zhou, John Leonard Sudijono, Paul Kwok Keung Ho, Subhash Gupta