Patents by Inventor Sohei Manabe

Sohei Manabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10986290
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal. A first storage gate is coupled to the first transfer gate to receive the image charge from the first transfer gate, and a first output gate is coupled to the first storage gate to receive the image charge from the first storage gate. A first capacitor is coupled to the first output gate to store the image charge.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: April 20, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Patent number: 10972687
    Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.
    Type: Grant
    Filed: May 8, 2020
    Date of Patent: April 6, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Publication number: 20210025993
    Abstract: A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.
    Type: Application
    Filed: July 25, 2019
    Publication date: January 28, 2021
    Inventors: Woon Il Choi, Sohei Manabe
  • Publication number: 20210029322
    Abstract: An image sensor has an array of pixel blocks, and each pixel block having associated shutter transistors with each coupled to transfer an image signal comprising a charge dependent on light exposure of a selected pixel onto an image storage capacitor of a plurality of image storage capacitors associated with the pixel block, the image storage capacitors of the pixel block configured to be read through a differential amplifier into an analog to digital converter. The differential amplifier of each pixel block receives a second input from a single reset-sampling capacitor associated with the pixel block. The single reset-sampling capacitor is loaded when the pixels of the pixel block are reset.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 28, 2021
    Inventors: Keiji Mabuchi, Sohei Manabe, Lindsay Grant
  • Publication number: 20210014440
    Abstract: An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.
    Type: Application
    Filed: July 9, 2019
    Publication date: January 14, 2021
    Inventors: Keiji Mabuchi, Sohei Manabe, Lindsay Grant
  • Publication number: 20200264309
    Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.
    Type: Application
    Filed: May 8, 2020
    Publication date: August 20, 2020
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Patent number: 10741593
    Abstract: A pixel cell includes a photodiode disposed in a semiconductor material layer to accumulate image charge photogenerated in the photodiode in response to incident light. A storage transistor is coupled to the photodiode to store the image charge photogenerated in the photodiode. The storage transistor includes a storage gate disposed proximate a first surface of the semiconductor material layer. The storage gate includes a pair of vertical transfer gate (VTG) portions. Each one of the pair of VTG portions extends a first distance into the semiconductor material layer through the first surface of the semiconductor material layer. A storage node is disposed below the first surface of the semiconductor material layer and between the pair of VTG portions of the storage gate to store the image charge transferred from the photodiode in response to a storage signal.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: August 11, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Keiji Mabuchi, Sohei Manabe
  • Publication number: 20200235158
    Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 23, 2020
    Inventors: Xianmin Yi, Jingming Yao, Philip Cizdziel, Eric Webster, Duli Mao, Zhiqiang Lin, Jens Landgraf, Keiji Mabuchi, Kevin Johnson, Sohei Manabe, Dyson H. Tai, Lindsay Grant, Boyd Fowler
  • Patent number: 10687003
    Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: June 16, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Keiji Mabuchi, Dyson H. Tai, Oray Orkun Cellek, Duli Mao, Sohei Manabe
  • Patent number: 10684373
    Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: June 16, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Patent number: 10582178
    Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: March 3, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Zheng Yang, Eiichi Funatsu, Sohei Manabe, Keiji Mabuchi, Dajiang Yang, Duli Mao, Bowei Zhang
  • Patent number: 10504956
    Abstract: An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: December 10, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Takayuki Goto, Dajiang Yang, Keiji Mabuchi, Sohei Manabe
  • Publication number: 20190356872
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal. A first storage gate is coupled to the first transfer gate to receive the image charge from the first transfer gate, and a first output gate is coupled to the first storage gate to receive the image charge from the first storage gate. A first capacitor is coupled to the first output gate to store the image charge.
    Type: Application
    Filed: May 18, 2018
    Publication date: November 21, 2019
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Patent number: 10483303
    Abstract: An image sensor is provided. The image sensor includes: a first pixel column, including: a first pixel unit; a second pixel unit, vertically adjacent to the first pixel unit; a first column bit line coupled to the first pixel unit, wherein image data acquired by the first pixel unit is read out through the first column bit line; and a second column bit line coupled to the second pixel unit, wherein image data acquired by the second pixel unit is read out through the second column bit line; and a second pixel column horizontally adjacent to the first pixel column, wherein the first pixel column and the second pixel column are mirror-symmetrical with respect to a connection between the pixel units and the column bit lines.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: November 19, 2019
    Assignee: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Keiji Mabuchi, Sohei Manabe
  • Publication number: 20190339392
    Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.
    Type: Application
    Filed: May 7, 2018
    Publication date: November 7, 2019
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Patent number: 10283558
    Abstract: An image sensor including a photodiode, a floating diffusion region, a first, second, and third doped region of a semiconductor material, and a first capacitor is presented. The photodiode is disposed in the semiconductor material to generate image charge in response to incident light. The floating diffusion region is disposed in the semiconductor material proximate to the photodiode. The floating diffusion region is at least partially surrounded by the first doped region of the semiconductor material. The second doped region and the third doped region of the semiconductor material each have an opposite polarity of the floating diffusion region and the first doped region. The floating diffusion region and at least part of the first doped region are laterally disposed between the second doped region and the third doped region.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: May 7, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi
  • Patent number: 10269846
    Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: April 23, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
  • Patent number: 10218924
    Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: February 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Duli Mao, Hiroaki Ebihara, Kazufumi Watanabe
  • Patent number: 10134788
    Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: November 20, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Publication number: 20180302579
    Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.
    Type: Application
    Filed: April 12, 2017
    Publication date: October 18, 2018
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Duli Mao, Hiroaki Ebihara, Kazufumi Watanabe