Patents by Inventor Sohei Manabe

Sohei Manabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160181297
    Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.
    Type: Application
    Filed: March 2, 2016
    Publication date: June 23, 2016
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Publication number: 20160181296
    Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.
    Type: Application
    Filed: March 2, 2016
    Publication date: June 23, 2016
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Patent number: 9344658
    Abstract: A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: May 17, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Tiejun Dai, Rui Wang, Dyson H. Tai, Sohei Manabe
  • Patent number: 9324759
    Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: April 26, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Publication number: 20160037111
    Abstract: A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.
    Type: Application
    Filed: July 31, 2014
    Publication date: February 4, 2016
    Inventors: Tiejun Dai, Rui Wang, Dyson H. Tai, Sohei Manabe
  • Publication number: 20150333099
    Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The first microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.
    Type: Application
    Filed: May 19, 2014
    Publication date: November 19, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Patent number: 9190434
    Abstract: Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: November 17, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventor: Sohei Manabe
  • Patent number: 9160958
    Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: October 13, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Jeong-Ho Lyu
  • Publication number: 20150236058
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Application
    Filed: May 5, 2015
    Publication date: August 20, 2015
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai
  • Publication number: 20150179695
    Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.
    Type: Application
    Filed: December 19, 2013
    Publication date: June 25, 2015
    Applicant: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Publication number: 20150172579
    Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.
    Type: Application
    Filed: December 18, 2013
    Publication date: June 18, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Sohei Manabe, Jeong-Ho Lyu
  • Patent number: 9054007
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: June 9, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Hsin-Chih Tai
  • Patent number: 9007504
    Abstract: Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces.
    Type: Grant
    Filed: April 6, 2012
    Date of Patent: April 14, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Jeong-Ho Lyu
  • Publication number: 20150076330
    Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.
    Type: Application
    Filed: September 17, 2013
    Publication date: March 19, 2015
    Applicant: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Publication number: 20150048427
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Application
    Filed: August 15, 2013
    Publication date: February 19, 2015
    Applicant: Omnivision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Hsin-Chih Tai
  • Publication number: 20140299925
    Abstract: Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.
    Type: Application
    Filed: April 8, 2013
    Publication date: October 9, 2014
    Applicant: OmniVision Technologies, Inc.
    Inventor: Sohei Manabe
  • Patent number: 8817154
    Abstract: An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: August 26, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Jeong-Ho Lyu
  • Patent number: 8804021
    Abstract: Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: August 12, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keh-Chiang Ku, Vincent Venezia, Hsin-Chih Tai, Duli Mao, Howard E. Rhodes
  • Patent number: 8742311
    Abstract: A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less than at least one of a line impedance of a transfer signal line or a line impedance of a reset signal line.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: June 3, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventor: Sohei Manabe
  • Patent number: 8716768
    Abstract: A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.
    Type: Grant
    Filed: October 20, 2011
    Date of Patent: May 6, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe