Abstract: A packaging assembly includes a substrate; chip-site lands disposed on the first surface; first solder balls connected to the chip-site lands; second solder balls connected to the first solder balls including solder materials having higher melting temperatures than the first solder balls; a semiconductor chip having a plurality of bonding pads connected to the second solder balls on a surface of the semiconductor chip; and an underfill resin disposed around the first and second solder balls.

Abstract: After a copper diffusion preventing film 4 is formed on a copper pad 1, a barrier metal including a titanium film 5, a nickel film 6, and a palladium film 7 is formed on the copper diffusion preventing film 4. The copper diffusion preventing film formed on the copper pad suppresses diffusion of copper. Even when a solder bump is formed on the copper pad, diffusion of tin in the solder and copper is suppressed. This prevents formation of an intermetallic compound between copper and tin, so no interface de-adhesion or delamination occurs and a highly reliable connection is obtained. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. In this invention, high shear strength can be ensured by connecting a solder bump, gold wire, or gold bump to a copper pad without increasing the number of fabrication steps.

Abstract: A semiconductor device includes a semiconductor chip having a semiconductor element or an integrated circuit formed in the semiconductor chip, a low dielectric constant insulating film formed on a surface of the semiconductor chip, and a plurality of bump electrodes being provided on the surface of the semiconductor chip, a wiring board having a plurality of connecting electrodes being electrically connected to the bump electrodes, and a resin molding filled in a space between the semiconductor chip and the wiring board, the electrically connected bump electrodes and the connecting electrodes being arranged in the space, wherein the resin molding is formed of a resin having a flux function and changed from liquid to solid when the bump electrodes are in a molten state.

Abstract: After a copper diffusion preventing film 4 is formed on a copper pad 1, a barrier metal including a titanium film 5, a nickel film 6, and a palladium film 7 is formed on the copper diffusion preventing film 4. The copper diffusion preventing film formed on the copper pad suppresses diffusion of copper. Even when a solder bump is formed on the copper pad, diffusion of tin in the solder and copper is suppressed. This prevents formation of an intermetallic compound between copper and tin, so no interface de-adhesion or delamination occurs and a highly reliable connection is obtained. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. In this invention, high shear strength can be ensured by connecting a solder bump, gold wire, or gold bump to a copper pad without increasing the number of fabrication steps.

Abstract: The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.