Abstract: An ink jet recording device is provided which includes an ink jet head which has a nozzle surface where a plurality of nozzle opening ends are arranged and which ejects water-based ink from the nozzles to a recording medium and a wiping device that executes a wiping operation where the nozzle surface and a wiping member are brought into contact and the nozzle surface is wiped, where oleic acid and a dispersant for dispersing the oleic acid into water by emulsifying the oleic acid are added to the water-based ink.

Abstract: An ink jet recording apparatus including an ink jet head for ejecting a water-based ink while moving at a speed of 0.5 m/s or more relative to a recording medium, wherein the water-based ink contains a fatty acid and a volatile alcohol, the volatile alcohol being used to emulsify the fatty acid and disperse the fatty acid in water and having a higher vapor pressure than water at 20° C.

Abstract: An ink jet recording apparatus including an ink jet head for ejecting a water-based ink from a nozzle onto a recording medium, wherein the water-based ink contains a fatty acid and a fatty acid potassium or sodium salt with which the fatty acid is emulsified and dispersed in water.

Abstract: An ink composition includes at least a pigment, a polyhydric alcohol monoalkyl ether having a vapor pressure of 0.1 mmHg or less at 20° C. and/or a nitrogen-containing cyclic compound, a polyhydric alcohol, an unsaturated fatty acid, an alkyl alcohol having 1 to 4 carbon atoms, a surfactant, and 10% to 60% by mass of water. An in jet recording method uses the ink composition, and a recorded matter is produced by the ink jet recording method.

Abstract: A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.

Abstract: A toner, has a number mode diameter of 3 ?m or more and 6 ?m or lower and a particle size distribution of a toner including an externally-applied agent in the range of 0.6 ?m to 400 ?m in which the number frequency of a toner smaller than the number mode diameter is smaller than the number frequency of a toner equal to or larger than the number mode diameter.

Abstract: A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.

Abstract: Disclosed is a toner containing resin mother particles and oil, in which the volume-average particle diameter of the resin mother particles is not less than 2 ?m but less than 4 ?m, (volume-average particle diameter of the resin mother particles)/(number-average particle diameter of the resin mother particles) is more than 1 but less than 1.1, the oil is silicone oil or fluorine oil, and the content of the silicone oil or fluorine oil is not less than 0.05% by mass but less than 2% by mass relative to the resin mother particles.

Abstract: According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a lower electrode film formed on the semiconductor substrate, a dielectric film formed on the lower electrode film, and an upper electrode film formed on the dielectric film, wherein the lower electrode film, the dielectric film and the upper electrode film construct a capacitor in a predetermined region on the semiconductor substrate, the dielectric film is separated from the upper electrode film outside the predetermined region, and the dielectric film is formed continuously with respect to an adjacent cell.

Abstract: A semiconductor device includes: a semiconductor substrate; a plurality of transistors on the semiconductor substrate, each of the transistors has a source and drain region; an interlayer insulating film on the semiconductor substrate and the plurality of transistors; and at least three capacitors on the interlayer insulation film, each of them has a top electrode, a bottom electrode and an insulating film interposed therebetween; wherein the 1st and 2nd capacitors have an shared electrode, with the top electrodes of the 1st and 2nd capacitors, which has a 1st longer direction, the 2nd and 3rd capacitors have an shared electrode, with the bottom electrodes of the 2nd and 3rd capacitors, which has a 2nd longer direction different from the 1st direction.

Abstract: A semiconductor memory device comprises a field effect transistor including a source/drain region, an interlayer insulation film burying the field effect transistor, a ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode, the lower electrode with a concave-convex surface, and a plug electrically connecting between the source/drain region and the ferroelectric capacitor. A height and a size in an in-place direction of each convex portion in the concave-convex surface is 1 to 50 nm. The ferroelectric film includes a lower ferroelectric film with a predetermined height from the lower electrode and an upper ferroelectric film formed on the lower ferroelectric film as being formed from the same material as the lower ferroelectric film. The lower ferroelectric film includes a part of which at least one of composition, crystallizing orientation and size of a crystalline particle being different from a crystalline particle in the upper ferroelectric film.

Abstract: There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a dielectric film formed on the bottom electrode, and a top electrode formed on the dielectric film and having a plurality of hole patterns.

Abstract: A semiconductor memory device according to an embodiment comprises: a field-effect transistor formed on a substrate; an interlayer insulation film formed on the substrate on which the field-effect transistor is formed; and a ferroelectric capacitor including a lower electrode connected via a plug to one of source/drain regions of the field-effect transistor, and formed on the interlayer insulation film, a ferroelectric film having a perovskite crystal structure used as a basic structure, and an upper electrode, wherein a lattice matching region in which a lattice of the ferroelectric film is matched with a lattice of the lower electrode is formed in a range of a predetermined thickness of the ferroelectric film from the lower electrode.

Abstract: A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.

Abstract: A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.

Abstract: A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.

Abstract: A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.

Abstract: According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, O is an oxygen element, and x>0), and a contact connected to the upper electrode, wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.

Abstract: A developing device and an image forming apparatus which can form a printing image having high resolution and a high quality level, while resolving various problems resulted from the use of small particle size toner particles are provided. The developing device includes a toner constituted of resin base particles containing a coloring agent and a binder resin, and silicone oil and/or fluoro oil added to the resin base particles, a toner receiving portion for receiving the toner, and a developing roller having an outer peripheral surface and an irregularity section for carrying the toner, the irregularity section formed on the outer peripheral surface and including a plurality of depression portions and/or protrusion portions provided regularly and uniformly, wherein an average particle size of the resin base particles in volume basis is in the range of 2 to 4 ?m, and an added amount of the silicone oil and/or fluoro oil to the resin base particles is in the range of 0.05 to 2 mass %.

Abstract: A ferroelectric memory that stores information by using a hysteresis characteristic of a ferroelectric, has a semiconductor substrate; a lower electrode formed above said semiconductor substrate; a ferroelectric film formed on said lower electrode; and an upper electrode formed on said ferroelectric film, wherein said upper electrode includes an AOx-type conductive oxide film formed on said ferroelectric film and an “A” metal film formed on said AOx-type conductive oxide film, and said “A” metal is a noble metal selected from among Ir, Ru, Rh, Pt, Os and Pd.