Abstract: This disclosure concerns a semiconductor device comprising an insulating film provided on a semiconductor substrate; a lower contact formed in the insulating film; a ferroelectric capacitor including a first lower electrode provided on the lower contact and connected to the lower contact, a second lower electrode provided on the first lower electrode and made of SRO (Strontium Ruthenium Oxide), a ferroelectric film including crystals, and an upper electrode provided on the ferroelectric film, grain diameters of the crystals being set to 30 nm to 150 nm by forming the ferroelectric film on the second lower electrode; and a wiring connected to the upper electrode.

Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

Abstract: Disclosed is a toner containing resin mother particles and oil, in which the volume-average particle diameter of the resin mother particles is not less than 2 ?m but less than 4 ?m, (volume-average particle diameter of the resin mother particles)/(number-average particle diameter of the resin mother particles) is more than 1 but less than 1.1, the oil is silicone oil or fluorine oil, and the content of the silicone oil or fluorine oil is not less than 0.05% by mass but less than 2% by mass relative to the resin mother particles.

Abstract: Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from the group consisting of silicon nitride, silicon oxynitride, chromium oxide, CrOxFy, CrAlxOy, AlSixOy, ZrSixOy, silicon oxycarbide, carbon, chromium nitride, titanium nitride, tantalum nitride, aluminum nitride, TiAlxNy, TaAlxNy, TiSixNy, AlSixNy (where x and y denote the component ratio), and silicon carbide, forming a resist pattern on the anti-reflection layer, forming a hole in the insulating film with the resist pattern used as a mask, burying a conductive material in the hole to form a plug, removing the resist pattern, and forming a ferroelectric capacitor above the anti-reflection layer.

Abstract: The invention provides a method for producing a toner comprising: a step of preparing a powder for production of the toner from a raw material containing a resin as a main component, a coloring agent, and a crystalline polyester having higher crystallinity than the resin as an accessory component, and a thermal conglobation step of conglobating the powder for production of the toner with heat. The invention also provides a method for producing a toner from a kneaded material obtained by kneading a raw material containing a resin and a coloring agent, wherein the resin comprises at least a first polyester resin and a second polyester resin different from the first polyester resin, and wherein when the coefficient of static friction of the first polyester resin is taken as ?1, the coefficient of static friction of the second polyester resin as ?2, the softening point of the first polyester resin as Ts1 (° C.) and the softening point of the second polyester resin as Ts2 (° C.

Abstract: A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.

Abstract: A manufacturing method of a semiconductor device of an embodiment of the present invention includes: forming a lower electrode film for a capacitor above a substrate; forming a ferroelectric film on the lower electrode film by deposition-simultaneous crystallization; forming a dummy film on the ferroelectric film; removing the dummy film and a part of the ferroelectric film through a planarizing process to planarize the surface of the ferroelectric film; and forming an upper electrode film for the capacitor on the ferroelectric film.

Abstract: According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a lower electrode film formed on the semiconductor substrate, a dielectric film formed on the lower electrode film, and an upper electrode film formed on the dielectric film, wherein the lower electrode film, the dielectric film and the upper electrode film construct a capacitor in a predetermined region on the semiconductor substrate, the dielectric film is separated from the upper electrode film outside the predetermined region, and the dielectric film is formed continuously with respect to an adjacent cell.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.

Abstract: A semiconductor device includes a semiconductor substrate, and a ferroelectric capacitor provided on the semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a first ferroelectric film provided on the lower electrode including Pb(ZrxTi1-x)O3 and having a tetragonal crystal system whose crystal direction is oriented in a <111> direction, a second ferroelectric film provided on the first ferroelectric film including Pb(ZryTi1-y)O3 and having a tetragonal crystal system whose crystal direction is oriented in the <111> direction, and an upper electrode provided on the second ferroelectric film.

Abstract: A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.

Abstract: A toner having high mechanical strength and being capable of exhibiting a sufficient fixing property in a wide temperature range is provided. Further, a fixing device and an image forming apparatus in which such a toner can be suitably used are provided. The toner contains polyester-based resin as a main resin component, and the acid value of the toner is 8.0 KOHmg/g or less. The polyester-based resin includes block polyester mainly composed of a block copolymer, and amorphous polyester having crystallinity lower than that of the block polyester. The block polyester has a crystalline block obtained by the condensation of a diol component with a dicarboxylic acid component and an amorphous block having crystallinity lower than that of the crystalline block.

Abstract: According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, and a capacitor formed above the semiconductor substrate by sandwiching a dielectric film between a lower electrode and upper electrode, wherein the upper electrode has a stacked structure including a first MOx type conductive oxide film (M is a metal element, O is an oxygen element, and x>0) having a crystal structure, and a crystal grain size of the first MOx type conductive oxide film is 5 to 100 nm.

Abstract: According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, O is an oxygen element, and x>0), and a contact connected to the upper electrode, wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.

Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

Abstract: A toner having high mechanical strength and being capable of exhibiting a sufficient fixing property in a wide temperature range is provided. Further, a fixing device and an image forming apparatus in which such a toner can be suitably used are also provided. The toner contains polyester-based resin as a main resin component. The polyester-based resin includes block polyester mainly composed of a block copolymer, and amorphous polyester having crystallinity lower than that of the block polyester. The block polyester has a crystalline block obtained by the condensation of a diol component with a dicarboxylic acid component, and an amorphous block having crystallinity lower than that of the crystalline block. The compounding ratio between the block polyester and the amorphous polyester is in the range of 5:95 to 45:55 in weight ratio.

Abstract: A toner having high mechanical strength and being capable of exhibiting a sufficient fixing property in a wide temperature range is provided. Further, a fixing device and an image forming apparatus in which such a toner can be suitably used are also provided. The toner is composed of a material containing a resin as a main component and rutile-anatase type titanium oxide. The resin is mainly composed of polyester-based resin. The polyester-based resin includes block polyester mainly composed of a block copolymer, and amorphous polyester having crystallinity lower than that of the block polyester. The block polyester has a crystalline block obtained by the condensation of a diol component with a dicarboxylic acid component, and an amorphous block having crystallinity lower than that of the crystalline block. The compounding ratio between the block polyester and the amorphous polyester is in the range of 5:95 to 45:55 in weight ratio.

Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, an insulating region provided on the semiconductor substrate, a first capacitor provided above the insulating region, a second capacitor provided above the insulating region and adjacent to the first capacitor, a conductive hydrogen-barrier film which prevents diffusion of hydrogen into the first and second capacitors and connects a bottom electrode of the first capacitor with a bottom electrode of the second capacitor, the conductive hydrogen-barrier film having a first portion interposing between the insulating region and the first capacitor and between the insulating region and the second capacitor.

Abstract: Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from the group consisting of silicon nitride, silicon oxynitride, chromium oxide, CrOxFy, CrAlxOy, AlSixOy, ZrSixOy, silicon oxycarbide, carbon, chromium nitride, titanium nitride, tantalum nitride, aluminum nitride, TiAlxNy, TaAlxNy, TiSixNy, AlSixNy (where x and y denote the component ratio), and silicon carbide, forming a resist pattern on the anti-reflection layer, forming a hole in the insulating film with the resist pattern used as a mask, burying a conductive material in the hole to form a plug, removing the resist pattern, and forming a ferroelectric capacitor above the anti-reflection layer.