Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: An active base-tracking multi-antenna system and an active base-tracking antenna system for a vessel and an offshore structure are provided. The active base-tracking multi-antenna system may include: a fixing shaft fixed to a fixture on a vessel or an offshore structure; a gimbal unit disposed on a top of the fixing shaft and keep positions of a panning motor and antennas; the panning motor disposed on the gimbal unit and simultaneously rotating the antennas in a left-right direction; and the antennas connected to the panning motor. Therefore, it is possible to always keep the antennas in a stable horizontal position and greatly improve communication quality by adjusting the azimuths and vertical angles of the antennas in real time to an optimal state for communication with a base station.

Abstract: The present disclosure relates to a cantilever sensor, and a biosensor having the same, wherein the cantilever sensor including a slit formed on a flat board and a cantilever formed by the slit, a first electrode formed on the cantilever, and a second electrode formed on the flat board countered to the first electrode about the slit, wherein the electrodes are formed on the cantilever sensor having the slit, whereby sensing can be conducted by an electric method, through which the sensor can be effectively miniaturized.

Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 65%, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system and used for creating high value-added business in the food and agriculture industry.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

Abstract: An image processing device includes a guided image filtering circuit and an image summation circuit. The guided image filtering circuit is configured to receive an input image including a green channel, a red channel and a blue channel, and to generate a corrected red channel and a corrected blue channel by applying a guided filter with respect to the red channel and the blue channel based on the green channel. The image summation circuit is configured to generate an output image by summing the green channel, the corrected red channel, and the corrected blue channel.

Abstract: The biosensor includes a substrate, an electrode pattern positioned on the substrate, a passivation layer which is formed with a plurality of holes spaced apart from each other, and a bead positioned at one or more holes among the plurality of holes, and to which an antibody is attached, the electrode pattern includes a first electrode pattern part and a second electrode pattern part spaced apart from the first electrode pattern part, which has a same height as a height of the first electrode pattern part, and forms an electric field with the first electrode pattern part.

Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.

Abstract: Disclosed are a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. The light emitting device may include a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, an ohmic layer on the second conductive semiconductor layer, an insulating layer on the ohmic layer, a first branch electrode electrically connected with the first conductive semiconductor layer, a first pad electrode connected with the first branch electrode for electrical connection with the first conductive semiconductor layer, a second pad electrode in contact with the ohmic layer through the insulating layer, a second branch electrode connected with the second pad electrode on the insulating layer, and a second through electrode passing through the insulating layer to connect the second branch electrode with the ohmic layer.

Abstract: In an image processing device, a color transformation circuit is configured to generate a color difference based on a first image of normal exposure and a second image of under exposure. A color fringe detection circuit is configured to detect color fringe in the first image, and to generate color fringe detection information based on the detected color fringe. A weight map formation circuit is configured to generate a weight map based on the color fringe detection information and the color difference. An image fusion circuit is configured to generate a third image, in which the detected color fringe is suppressed, based on the color difference and the weight map.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.

Abstract: Embodiments of the present disclosure are directed to a system comprising a processing unit executing an enumeration process over a high performance I/O network having endpoint locations that can be populated with endpoint devices. The system further comprises endpoint emulators to represent endpoint devices at endpoint locations unpopulated during the enumeration process. The system facilitates accessing certain endpoint devices later inserted (e.g., hot plugged) into the endpoint locations that were unpopulated during the enumeration process. The endpoint emulators can be implemented using various techniques, such as cards plugged into card slots coupled to the endpoint locations, or emulation software and/or firmware exposed to the processing unit. In an embodiment, the system is a test system for testing endpoint devices (e.g., PCIe SSDs), which test system can facilitate hot plugging of units under test in test slots that were unpopulated during the enumeration process.

Abstract: An display driving circuit including a buffer write controller transmitting a different image frame to a first buffer or a second buffer, a buffer scan controller scanning an image frame stored in the first buffer or the second buffer on the basis of a predetermined cycle, a write signal detector controlling the buffer write controller such that a second image frame is transmitted to the second buffer after a first image frame is transmitted to the first buffer, and a scan buffer switching controller receiving an EOF (End of Frame) command indicating the completion of transmission of the first image frame to the first buffer and controlling the buffer scan controller such that the first image frame stored in the first buffer is scanned after the image frame previously stored in the second buffer is scanned.

Abstract: A display device includes a first electrode, a second electrode, a third electrode, a lyophobic layer, a first liquid, and a second liquid, where the lyophobic layer is lyophobic to the second liquid. A method of driving the display device includes: providing a first potential difference between the first electrode and the third electrode to thereby cause the first liquid to begin moving toward the second electrode; providing a second potential difference between the second electrode and the third electrode while reducing the first potential difference to thereby cause the first liquid to move toward the first electrode; and removing the second potential difference to thereby cause the first liquid to slow down in its movement toward the first electrode or to stop in its movement toward the first electrode.

Abstract: Disclosed is an electrowetting display device including a plurality pixels. Each pixel includes a pixel electrode, a hydrophobic layer, a hydrophobic fluid, and a bank adapted to limit the range of movement of the hydrophobic fluid. The bank has a hydrophobic bank surface and a hydrophilic bank surface, which face each other. The hydrophobic fluid is moved from the hydrophilic bank surface towards the hydrophobic bank surface by the application of a voltage to the pixel electrode.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.