Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Abstract: One embodiment relates to a light-emitting device, a backlight unit and a lighting device. The light-emitting device of the embodiment includes a light-emitting structure and a phosphor layer disposed on the light-emitting structure. The first and second pads are electrically connected with the light-emitting structure, wherein the phosphor layer is disposed on one side of the light-emitting device, and the first and second pads are disposed on the lower part of the light-emitting device. Thus a side view-type light-emitting device having a simplified structure can be enabled. Thus, the embodiment can enable thinning and slimming by means of the simplified structure.

Abstract: A semiconductor device may be provided. The semiconductor device may include a period code generation circuit configured to generate a period code having a logic level combination corresponding to a first command or a second command. The semiconductor device may include a code synthesis circuit configured to add the period code to a previous synthesis code to generate a synthesis code. The semiconductor device may include a buffer control circuit configured to compare the synthesis code with a selection control code to generate a buffer inactivation signal for controlling input of a data strobe signal.

Abstract: A package module may be provided. The package module may include a first chip and a second chip. The first chip may be configured to receive first pattern data to generate first transmission data in a first write mode. The second chip may be configured to receive the first transmission data to generate and output first sense data in a first read mode.

Abstract: Disclosed area methods for fabricating three-dimensional artificial lipid biomembrane structure arrays with sufficient reaction area and high stability on a substrate in a simpler and easier manner. The methods use constituent lipids of real cell membranes and a plurality of microwells formed on a substrate. The methods can more effectively provide biomimetic three-dimensional lipid membrane structure arrays that possess structural and/or functional properties of cell membranes.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: The present invention relates to a non-oriented electrical steel sheet adhesive coating composition including the constituent elements below, a non-oriented electrical steel sheet product, and a manufacturing method thereof. The non-oriented electrical steel sheet adhesive coating composition includes: a first component including an organic/inorganic composite; and a second component including a composite metal phosphate, wherein the organic/inorganic composite is formed by having inorganic nanoparticles chemically substituted with some functional groups in an organic resin, the organic resin is one, or two or more, selected from an epoxy-based resin, an ester-based resin, an acrylic resin, a styrene-based resin, a urethane-based resin, and an ethylene-based resin, and the inorganic nanoparticles are one, or two or more, selected from SiO2, Al2O3, TiO2, MgO, ZnO, and ZrO2.

Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

Abstract: A semiconductor device may be provided. The semiconductor device may include a period code generation circuit configured to generate a period code having a logic level combination corresponding to a first command or a second command. The semiconductor device may include a code synthesis circuit configured to add the period code to a previous synthesis code to generate a synthesis code. The semiconductor device may include a buffer control circuit configured to compare the synthesis code with a selection control code to generate a buffer inactivation signal for controlling input of a data strobe signal.

Abstract: An display driving circuit including a buffer write controller transmitting a different image frame to a first buffer or a second buffer, a buffer scan controller scanning an image frame stored in the first buffer or the second buffer on the basis of a predetermined cycle, a write signal detector controlling the buffer write controller such that a second image frame is transmitted to the second buffer after a first image frame is transmitted to the first buffer, and a scan buffer switching controller receiving an EOF (End of Frame) command indicating the completion of transmission of the first image frame to the first buffer and controlling the buffer scan controller such that the first image frame stored in the first buffer is scanned after the image frame previously stored in the second buffer is scanned.

Abstract: A semiconductor device includes a detection signal generation circuit generating a detection signal by detecting a phase difference of an input signal and an internal clock, and generating delayed input signals by delaying the input signal. The semiconductor device further includes an output enable signal generation circuit outputting an output enable signal by selecting one of the delayed input signals in response to the detection signal and latching the selected one of the delayed input signals in synchronization with the internal clock. The output enable signal may initiate a data transfer operation.

Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.

Abstract: The present disclosure relates to a diagnostic kit capable of accurately diagnosing diseases or disorders related with abnormal aggregation or misfolding of proteins, including disorders or diseases caused by aggregation of ?-amyloid such as Alzheimer's disease as well as disorders or diseases caused by aggregation of other proteins, based on concentration analysis of the aggregated proteins before and after dissociation.

Abstract: Embodiments of the present disclosure are directed to a system comprising a processing unit executing an enumeration process over a high performance I/O network having endpoint locations that can be populated with endpoint devices. The system further comprises endpoint emulators to represent endpoint devices at endpoint locations unpopulated during the enumeration process. The system facilitates accessing certain endpoint devices later inserted (e.g., hot plugged) into the endpoint locations that were unpopulated during the enumeration process. The endpoint emulators can be implemented using various techniques, such as cards plugged into card slots coupled to the endpoint locations, or emulation software and/or firmware exposed to the processing unit. In an embodiment, the system is a test system for testing endpoint devices (e.g., PCIe SSDs), which test system can facilitate hot plugging of units under test in test slots that were unpopulated during the enumeration process.

Abstract: The present invention relates to a method for producing a polyethylene terephthalate polymer having improved abrasion resistance by introducing an inorganic particle (metal) in addition to ethylene glycol (EG, Ethyleneglycol) and terephthalic acid (TPA, terephthalic acid) forming a conventional polyethylene terephthalate bond, and a yarn and a car mat produced by using the polyethylene terephthalate polymer produced by the above-mentioned production method. When the yarn and the car mat are produced by using the above-mentioned polyethylene terephthalate polymer, the density of the yarn is improved and the abrasion resistance of the car mat can be improved.

Abstract: The present invention relates to a method for diagnosing a disease using an analysis of oligomer of an abnormal aggregated protein includes: (1) preparing a body fluid sample including at least one of blood, blood plasma, blood serum, saliva, urine, tear, and mucus; (2) making a dilution of the body fluid sample; (3) using a biosensor to measure and detect an aggregated protein in the diluted body fluid sample; (4) analyzing a signal change of the biosensor caused by the dilution of the aggregated protein to determine a slope according to the dilution from the measurements; and (5) analyzing a proportion of the oligomer from the slope according to the dilution to make a diagnosis. The method uses a biosensor to measure the impedance and the protein concentration of blood and detects the slope according to the numerical value of the monomer and the oligomer to diagnose normal or abnormal protein aggregation or the associated diseases with more accuracy.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A memory test system may include a memory apparatus and a test apparatus. The test apparatus may be configured to generate a code distribution of noble cells. The test apparatus may be configured to generate a mass data code distribution and a test result based on the code distribution of noble cells.