Patents by Inventor Song Kim

Song Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200298275
    Abstract: A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.
    Type: Application
    Filed: March 18, 2020
    Publication date: September 24, 2020
    Inventors: Byung Chul LEE, DONG-HYUN KANG, Jin soo PARK, Tae Song KIM
  • Publication number: 20200286949
    Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.
    Type: Application
    Filed: September 19, 2018
    Publication date: September 10, 2020
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Sang Youl LEE, Chung Song KIM, Yong Tae MOON, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
  • Patent number: 10755981
    Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: August 25, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
  • Publication number: 20200260082
    Abstract: The present disclosure relates to image encoding or decoding for efficiently encoding 360-degree video and mitigating image quality deterioration due to discontinuity artifacts.
    Type: Application
    Filed: July 30, 2018
    Publication date: August 13, 2020
    Inventors: Jeong-yeon LIM, Hyo Song KIM, Se-hoon SON, Jae-seob SHIN, Gyeong-taek LEE, Sun-young LEE
  • Patent number: 10711321
    Abstract: The present invention relates to a non-oriented electrical steel sheet adhesive coating composition including the constituent elements below, a non-oriented electrical steel sheet product, and a manufacturing method thereof. The non-oriented electrical steel sheet adhesive coating composition includes: a first component including an organic/inorganic composite; and a second component including a composite metal phosphate, wherein the organic/inorganic composite is formed by having inorganic nanoparticles chemically substituted with some functional groups in an organic resin, the organic resin is one, or two or more, selected from an epoxy-based resin, an ester-based resin, an acrylic resin, a styrene-based resin, a urethane-based resin, and an ethylene-based resin, and the inorganic nanoparticles are one, or two or more, selected from SiO2, Al2O3, TiO2, MgO, ZnO, and ZrO2.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: July 14, 2020
    Assignee: POSCO
    Inventors: Jung Woo Kim, Ji Hyun Kim, Jae Song Kim, Jae Hoon Kim
  • Publication number: 20200127173
    Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in
    Type: Application
    Filed: March 17, 2017
    Publication date: April 23, 2020
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Sun Woo PARK, Myung Ho HAN, Hyeon Min CHO, June O SONG, Chung Song KIM, Ji Hyung MOON, Sang Youl LEE
  • Patent number: 10613577
    Abstract: A semiconductor device includes a detection signal generation circuit generating a detection signal by detecting a phase difference of an input signal and an internal clock, and generating delayed input signals by delaying the input signal. The semiconductor device further includes an output enable signal generation circuit outputting an output enable signal by selecting one of the delayed input signals in response to the detection signal and latching the selected one of the delayed input signals in synchronization with the internal clock. The output enable signal may initiate a data transfer operation.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: April 7, 2020
    Assignee: SK hynix Inc.
    Inventors: Hak Song Kim, Dong Kyun Kim, Dong Uk Lee
  • Patent number: 10607673
    Abstract: A semiconductor device may be provided. The semiconductor device may include a period code generation circuit configured to generate a period code having a logic level combination corresponding to a first command or a second command. The semiconductor device may include a code synthesis circuit configured to add the period code to a previous synthesis code to generate a synthesis code. The semiconductor device may include a buffer control circuit configured to compare the synthesis code with a selection control code to generate a buffer inactivation signal for controlling input of a data strobe signal.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: March 31, 2020
    Assignee: SK hynix Inc.
    Inventors: Hak Song Kim, Min Su Park
  • Patent number: 10600936
    Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: March 24, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song
  • Publication number: 20200087807
    Abstract: A method for preparing a tightly sealed 3D lipid structure and a tightly sealed 3D lipid structure prepared thereby is disclosed. The method allows for simpler and more convenient preparation of an artificial biomembrane structure on a substrate using a lipid material, by using a plurality of transparent microwells formed on the substrate, and observation inside the microwells. In addition, a spherical 3D artificial single bilayer structure may be sealed very tightly through a simple method of changing the frequency of an electric field applied vertically to the microwells having a lipid layer formed. Through this, a biomimetic 3D structure having the structural and/or functional characteristics of a cell membrane constituting a cell can be provided more effectively.
    Type: Application
    Filed: March 29, 2019
    Publication date: March 19, 2020
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Tae Song KIM, Dong-Hyun KANG
  • Patent number: 10585105
    Abstract: The present invention relates to a method for diagnosing a disease using an analysis of oligomer of an abnormal aggregated protein includes: (1) preparing a body fluid sample including at least one of blood, blood plasma, blood serum, saliva, urine, tear, and mucus; (2) making a dilution of the body fluid sample; (3) using a biosensor to measure and detect an aggregated protein in the diluted body fluid sample; (4) analyzing a signal change of the biosensor caused by the dilution of the aggregated protein to determine a slope according to the dilution from the measurements; and (5) analyzing a proportion of the oligomer from the slope according to the dilution to make a diagnosis. The method uses a biosensor to measure the impedance and the protein concentration of blood and detects the slope according to the numerical value of the monomer and the oligomer to diagnose normal or abnormal protein aggregation or the associated diseases with more accuracy.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: March 10, 2020
    Assignee: Korea Institute of Science and Technology
    Inventors: Ji Yoon Kang, Kyeong Sik Shin, Jae Hoon Ji, Tae Song Kim, Young Soo Kim, Sang Yun Kim
  • Publication number: 20200071459
    Abstract: A polyethylene terephthalate bulked continuous filament is manufactured by steps of melt-spinning, multi-step stretching a polyethylene terephthalate chip and a master batch chip for coloring, passing through a texturing nozzle, cooling, and winding and has an elastic modulus of 1.00E+07 to 5.00E+09 Pa at a temperature range of 10° C. to 200° C.
    Type: Application
    Filed: February 10, 2019
    Publication date: March 5, 2020
    Inventors: Seung Taek OH, Moo Song KIM
  • Patent number: 10541254
    Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: January 21, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song
  • Publication number: 20190384350
    Abstract: A semiconductor device includes a delay-locked clock generation circuit configured to generate a delay-locked clock which is driven by at least one internal clock selected from a plurality of internal clocks in response to a phase control signal. The semiconductor device also includes a latency command generation circuit configured to generate a latency command for generating transmission data from data by latching an internal command sequentially by the at least one internal clock in response to the phase control signal and shifting the sequentially latched internal command by a period set by a shifting control signal in response to the delay-locked clock.
    Type: Application
    Filed: December 6, 2018
    Publication date: December 19, 2019
    Applicant: SK hynix Inc.
    Inventors: Sung Chun JANG, Kyung Whan KIM, Hak Song KIM
  • Publication number: 20190378873
    Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.
    Type: Application
    Filed: November 24, 2017
    Publication date: December 12, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
  • Publication number: 20190378760
    Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.
    Type: Application
    Filed: January 5, 2018
    Publication date: December 12, 2019
    Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
  • Patent number: 10483247
    Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: November 19, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song
  • Patent number: 10396098
    Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: August 27, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, June O Song
  • Publication number: 20190189170
    Abstract: A semiconductor device may be provided. The semiconductor device may include a period code generation circuit configured to generate a period code having a logic level combination corresponding to a first command or a second command. The semiconductor device may include a code synthesis circuit configured to add the period code to a previous synthesis code to generate a synthesis code. The semiconductor device may include a buffer control circuit configured to compare the synthesis code with a selection control code to generate a buffer inactivation signal for controlling input of a data strobe signal.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: SK hynix Inc.
    Inventors: Hak Song KIM, Min Su PARK
  • Patent number: 10282289
    Abstract: A package module may be provided. The package module may include a first chip and a second chip. The first chip may be configured to receive first pattern data to generate first transmission data in a first write mode. The second chip may be configured to receive the first transmission data to generate and output first sense data in a first read mode.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: May 7, 2019
    Assignee: SK hynix Inc.
    Inventors: Hak Song Kim, Min Su Park