Abstract: Provided is an optical system which may acquire a hyperspectral image by acquiring a spectral image of an object to be measured, which includes, to collect spectral data and train the neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, a slit moving to scan the incident image and passing and outputting a part of the formed image, and a first optical part obtaining spectral data by splitting light of the image received through the slit by wavelength. Also, the system includes, to decompose overlapped spectral data and to infer hyperspectral image data through the trained neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, and a first optical part obtaining spectral data by splitting light of the received image by wavelength.

Abstract: A battery module includes at least one cell assembly including a plurality of secondary batteries, a gas pipe configured to allow gas produced in a module housing to move therein, and the module housing including a lower case having one open side and an internal space in which the at least one cell assembly is received, and an upper case coupled to one side of the lower case to cover the one open side of the lower case and having a receiving space in which the gas pipe is received, and a connection hole to which one end of the gas pipe is connected such that the gas pipe and the internal space are in communication with each other.

Abstract: A light emitting device includes a first electrode, a first stack on the first electrode, a first charge generation layer on the first stack, a second stack on the first charge generation layer, and a second electrode on the second stack. The first stack includes a first light emitting layer and a plurality of first organic layers, and the second stack includes a second light emitting layer and a plurality of second organic layers. Among the plurality of first organic layers and the plurality of second organic layers, at least one of organic layers adjacent to the first light emitting layer and the second light emitting layer includes a light emitting material.

Abstract: A method of manufacturing a semiconductor device may comprise loading a first substrate and a second substrate into a substrate processing apparatus, wherein the first substrate is loaded into a first chamber and the second substrate is loaded into a second chamber on the first chamber, and processing the loaded first substrate and the loaded second substrate, wherein the substrate processing apparatus comprises, the first and second chambers, a first pipe through which a first processing solution supplied to the first chamber to process the first substrate is moved, a second pipe through which a second processing solution supplied to the second chamber to process the second substrate is moved, and a temperature adjusting pipe configured to surround at least a part of the first pipe, through which the temperature adjusting solution adjusting a temperature of the first processing solution is moved, wherein a length of the first pipe is shorter than a length of the second pipe.

Abstract: A peptide with terminal tyrosine has an excellent effect on inhibiting protein nitration and also an excellent effect on preventing, ameliorating, or treating disease symptoms in chronic immobilization stress-induced depression/cognitive impairment model, Alzheimer's disease model, epileptic seizure model, stroke model, type 2 diabetes model, acute renal failure model, or hyperammonemia model.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third co

Abstract: A method for ameliorating a disease caused by nitration of tyrosine in protein includes administering a composition comprising tyrosine or a salt thereof to a subject in need thereof. Tyrosine as effective component of the present invention not only can enhance the activity of glutamine synthetase having reduced activity and but also has an effect of restoring the amount (i.e., ratio) of glutamine and glutamic acid in brain and the amount of ammonia to normal level, an effect of enhancing the insulin sensitivity in a model of type 2 diabetes, an effect of suppressing the excitotoxicity and oxidative stress in a model of epileptic seizure, an effect of reducing cerebral infarction and enhancing the activity of GS in a model of brain stroke, an effect of eliminating the nitration of tyrosine using human recombinant MnSOD, and an effect for acute renal failure and hyperammonemia.

Abstract: A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.

Abstract: The present disclosure provides a compound represented by Formula (I) and a pharmaceutically acceptable salt which are effective as a dopamine reuptake inhibitor and a method of using the compound: wherein X is independently halo, alkyl, alkoxy or nitro; m is 0, 1, 2, 3 or 4; n is 1 or 2; R1 and R2 are independently H— or alkyl; R3 is H—, alkyl or aralkyl; and R4 is H— or aryl.

Abstract: An image sensor includes a first semiconductor substrate, a photoelectric conversion region in the first semiconductor substrate, and a buried insulating film on the first semiconductor substrate. The buried insulating film covers a first region of the first semiconductor substrate and exposes a second region of the first semiconductor substrate. The sensor includes a second semiconductor substrate on the buried insulating film, an operating gate structure defining a first channel of a first conductive type in the second semiconductor substrate, and a transfer gate structure defining a second channel of a second conductive type different from the first conductive type in the second region of the first semiconductor substrate.

Abstract: Disclosed are oxadiazole compounds and pharmaceutically acceptable salts thereof. The compounds and pharmaceutically acceptable salts thereof are specifically suitable for the treatment of neurological diseases such as epilepsy.

Abstract: A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.

Abstract: Disclosed are oxadiazole compounds and pharmaceutically acceptable salts thereof. The compounds and pharmaceutically acceptable salts thereof are specifically suitable for the treatment of neurological diseases such as epilepsy.

Abstract: An image sensor is provided, the image sensor comprises a first semiconductor substrate; a photoelectric conversion layer in the first semiconductor substrate; a color filter on a first surface of the first semiconductor substrate; a micro lens covering the color filter; a first transistor on the first semiconductor substrate; a first insulating layer on a second surface; a second semiconductor substrate in contact with the first insulating layer, the second semiconductor substrate including a gate trench exposing at least a portion of the first gate structure; a second transistor on the second semiconductor substrate; a second insulating layer on the fourth surface; and a metal layer in the second insulating layer.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.