Abstract: A medical device includes a medical function unit, an electronic control unit, and a voltage supply for the medical function unit and/or the electronic control unit, wherein the voltage supply is configured to be connected to a wired external supply voltage network, and wherein the electronic control unit includes a data interface in order to exchange data with an external device. The medical device wherein the data interface is configured to transmit and/or to receive data via at least one conductor of the supply voltage network. Furthermore, a medical device system is included.

Abstract: A gear unit having a shaft, in particular an input shaft, a fan impeller being connected to the shaft in a torsionally fixed manner, a fan hood being connected to the gear unit housing, which at least partially encloses the fan impeller, a separation plate for separating the pressure chamber of the fan from the suction chamber of the fan being connected to the fan hood, where the separation plate has an air intake opening for the fan impeller and is situated on the side of the fan impeller facing axially away from the gear unit, the fan impeller has an upper and a lower cover disk, which are axially set apart from each other, and fan blades are disposed between the cover disks, so that channels are formed, the radial clearance of the air intake opening being disposed within, especially centrally within, the radial clearance region covered by the upper cover disk, and the air intake opening is disposed axially within, especially centrally within, the axial region covered by the upper cover disk.

Abstract: A switch-node rising edge detection circuit is provided for a switched-mode DC/DC boost converter. A high-side gate-driver couples a gate of the high-side NMOS power transistor to either a first terminal of a bootstrap capacitor or the switch-node. The detection circuit includes an AND gate that receives an activation signal on a first input and provides a switching signal to the high-side gate-driver. A PMOS transistor is coupled in series with an inverter between the first terminal of the bootstrap capacitor and a second input of the AND gate. The inverter receives supply voltages from the first terminal of the bootstrap capacitor and the switch-node. The gate of the PMOS transistor receives the activation signal. An NMOS transistor is coupled between an output voltage and a node between the PMOS transistor and the inverter. A gate of the NMOS transistor is coupled to the bootstrap capacitor's first terminal.

Abstract: A current measurement linearization circuit for a DC/DC boost converter includes a back-gate sensing transistor and a back-gate reset transistor. The back-gate sensing transistor has a first terminal coupled to a first body contact of a high-side power transistor and a second terminal coupled to a second body contact of a first replica transistor in a valley-current sensing circuit. The back-gate reset transistor has a first terminal coupled to a max reference voltage that is equal to the greater of an input voltage and an output voltage and a second terminal coupled to the second body contact.

Abstract: Apparatuses and methods are provided for a high speed writing test mode for memories. An example apparatus includes a memory core, a data terminal coupled to a data receiver, a read buffer coupled between the data terminal and the memory core, and a write buffer coupled between the data receiver and the memory core. The write buffer may include at least a first input coupled to the data receiver, and a second input. While in a test mode, the write buffer may be loaded with data from the second input instead of the first input.

Abstract: A current measurement linearization circuit for a DC/DC boost converter includes a back-gate sensing transistor and a back-gate reset transistor. The back-gate sensing transistor has a first terminal coupled to a first body contact of a high-side power transistor and a second terminal coupled to a second body contact of a first replica transistor in a valley-current sensing circuit. The back-gate reset transistor has a first terminal coupled to a max reference voltage that is equal to the greater of an input voltage and an output voltage and a second terminal coupled to the second body contact.

Abstract: A power supply system can include at least one power switch to generate an output current based on an input voltage in response to a switching signal to generate an output voltage. A feedback system generates a feedback current based on the output voltage. A mode detector generates a control current associated with the output current based on the feedback current and selects between a pulse-width modulation (PWM) mode and a pulse mode based on an amplitude of the control current. The PWM mode is associated with a sequential on-time and off-time of the at least one power switch, and the pulse mode is associated with adding an idle time between the on-time and the off-time of the at least one power switch based on the switching signal. A gate driver system generates the switching signal based on the mode.

Abstract: A timer for creating a stable on time. The timer may have a reference voltage source, and an input voltage source. The voltage sources providing voltage that can be applied to a various circuit components such as capacitors, inductors, resistors, diodes, transistors, or other components. The reference voltage source may also be modified by a set of transistors coupled as a diode before being seen by an input of a timer comparator. The reference and input voltage source signals, which may be modified by circuit components, are compared by the timer comparator and then output as a timer control signal. The timer control signal may control a voltage converter, or the switches of a voltage converter.

Abstract: Methods, systems, and apparatus to facilitate current sensing for valley current-controlled power converters are disclosed. An example apparatus includes a comparator including a first terminal, a second terminal, and an output. The apparatus further includes a first transistor including a first drain coupled to the first terminal of the comparator. The apparatus further includes a second transistor including a second drain coupled to the first terminal of the comparator. The apparatus further includes a third transistor including a third drain coupled to the second terminal of the comparator.

Abstract: A memory system includes a memory device, a command clock (CK_t clock) that provides a first clock signal at a first frequency, and a data path clock (WCK_t clock) that provides a second clock signal at a second frequency different than the first frequency. Data path circuitry is synchronized with the WCK_t clock and provides an error detection code (EDC) hold pattern during an idle state. EDC hold pattern synchronization logic synchronizes a start of transmission of the EDC hold pattern synchronous to the CK_t clock.

Abstract: An integrated circuit includes first and second double data rate (DDR) shift registers. A multiplexor outputs a serialized data burst by selecting between a first output stream of the first DDR shift register and a second output stream of the second DDR shift register based upon a received selector signal. The selector signal is derived from clock doubling circuitry that provides a frequency that is twice a frequency of a first clock driving the first DDR shift register.

Abstract: A timer for creating a stable on time. The timer may have a reference voltage source, and an input voltage source. The voltage sources providing voltage that can be applied to a various circuit components such as capacitors, inductors, resistors, diodes, transistors, or other components. The reference voltage source may also be modified by a set of transistors coupled as a diode before being seen by an input of a timer comparator. The reference and input voltage source signals, which may be modified by circuit components, are compared by the timer comparator and then output as a timer control signal. The timer control signal may control a voltage converter, or the switches of a voltage converter.

Abstract: A memory system includes a memory device, a command clock (CK_t clock) that provides a first clock signal at a first frequency, and a data path clock (WCK_t clock) that provides a second clock signal at a second frequency different than the first frequency. Data path circuitry is synchronized with the WCK_t clock and provides an error detection code (EDC) hold pattern during an idle state. EDC hold pattern synchronization logic synchronizes a start of transmission of the EDC hold pattern synchronous to the CK_t clock.

Abstract: A memory system includes a memory device, a command clock (CK_t clock) that provides a first clock signal at a first frequency, and a data path clock (WCK_t clock) that provides a second clock signal at a second frequency different than the first frequency. Data path circuitry is synchronized with the WCK_t clock and provides an error detection code (EDC) hold pattern during an idle state. EDC hold pattern synchronization logic synchronizes a start of transmission of the EDC hold pattern synchronous to the CK_t clock.

Abstract: Apparatuses and methods are provided for a high speed writing test mode for memories. An example apparatus includes a memory core, a data terminal coupled to a data receiver, a read buffer coupled between the data terminal and the memory core, and a write buffer coupled between the data receiver and the memory core. The write buffer may include at least a first input coupled to the data receiver, and a second input. While in a test mode, the write buffer may be loaded with data from the second input instead of the first input.

Abstract: An integrated circuit includes first and second double data rate (DDR) shift registers. A multiplexor outputs a serialized data burst by selecting between a first output stream of the first DDR shift register and a second output stream of the second DDR shift register based upon a received selector signal. The selector signal is derived from clock doubling circuitry that provides a frequency that is twice a frequency of a first clock driving the first DDR shift register.

Abstract: A bearing system having a housing component, a shaft being supported in the housing component with the aid of a bearing, especially using a roller bearing, wherein the bearing is accommodated in a stepped bore in the housing component, which especially extends through the housing component, a lid part seals the stepped bore, especially with respect to the outside, the lid part is frictionally connected to the housing component, the lid part is accommodated in the stepped bore, a surface section of the outside of the lid part is situated in alignment with a step of the stepped bore, in particular in such a way that the surface section is situated on an axial position of the step.

Abstract: An integrated circuit includes first and second double data rate (DDR) shift registers. A multiplexor outputs a serialized data burst by selecting between a first output stream of the first DDR shift register and a second output stream of the second DDR shift register based upon a received selector signal. The selector signal is derived from clock doubling circuitry that provides a frequency that is twice a frequency of a first clock driving the first DDR shift register.

Abstract: A memory system includes a memory device, a command clock (CK_t clock) that provides a first clock signal at a first frequency, and a data path clock (WCK_t clock) that provides a second clock signal at a second frequency different than the first frequency. Data path circuitry is synchronized with the WCK_t clock and provides an error detection code (EDC) hold pattern during an idle state. EDC hold pattern synchronization logic synchronizes a start of transmission of the EDC hold pattern synchronous to the CK_t clock.

Abstract: An integrated circuit includes first and second double data rate (DDR) shift registers. A multiplexor outputs a serialized data burst by selecting between a first output stream of the first DDR shift register and a second output stream of the second DDR shift register based upon a received selector signal. The selector signal is derived from clock doubling circuitry that provides a frequency that is twice a frequency of a first clock driving the first DDR shift register.