Abstract: A microelectromechanical light emitter component comprises an emitter layer structure of the microelectromechanical light emitter component and an inductive structure of the microelectromechanical light emitter component. The inductive structure of the microelectromechanical light emitter component is configured to generate current in the emitter layer structure by electromagnetic induction, such that the emitter layer structure emits light. The emitter layer structure is electrically insulated from the inductive structure.

Abstract: The invention relates to an arrangement (10) for feeding electrical energy into an energy supply system (100). The invention provides that the arrangement has a generator (20) with electrically isolated winding systems (30), the arrangement has at least two frequency converters (40, 41, 42) with isolated intermediate circuits (60), wherein each frequency converter is connected directly or indirectly to a winding system (30) of the generator, the arrangement has at least one control device (80), to which the frequency converters are connected for actuation thereof, and the frequency converters, on actuation by the control device, feed current by means of a voltage with a multi-level characteristic into the energy supply system (100).

Abstract: A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.

Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

Abstract: The invention relates to a solenoid valve having an actuator body (17), in which a magnet coil (15) that interacts with a magnet core (16) is arranged and which interacts with an armature (14) that can be moved relative to the magnet core between two end positions and is acted upon by the spring force of an armature spring (13) in a movement direction pointing away from the magnet core (16). The magnet core and the armature have stop surfaces (18a, 18b) which are interrupted by a recess (29) that receives the armature spring. According to the invention, a solenoid valve is provided which is improved with respect to the function of the solenoid valve and the stress on the stop surfaces (18a, 18b) that causes wear. This is achieved in that the magnet core (16) and/or the armature (14) have/has a design (30, 31), in particular a spherical or toroidal design, which reduces the stress on the edges in the region of the stop surfaces (18a, 18b).

Abstract: An electromagnetically actuated valve comprising a valve piston including a first end and an opposite second end, a valve plate at the first end of the valve piston, a spring plate which is fastened to the second end of the valve piston and which has a first planar contact surface, a valve spring that lies against the spring plate and that moves the valve plate into a closed position, and an electromagnet including a coil, an armature pin which has a second planar contact surface that is parallel relative to and that bears against the first planar contact surface, and an armature arranged on the armature pin, wherein the first planar contact surface and the second planar contact surface each have a diameter that is greater than a greatest diameter of the armature pin and a diameter of the second end of the valve piston.

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.

Abstract: The invention relates to an electromagnetically actuable intake valve for a high-pressure pump of a fuel injection system, in particular of a common-rail injection system, comprising a reciprocating valve closure element (2) that engages with a valve seat (1) and is loaded in the closing direction by the spring force of a valve spring (3) which is supported on a spring plate (4) connected to the valve closure element (2), further comprising a reciprocating armature (6) that engages with an electromagnet (5) and is loaded in the direction of the valve closure element (2) by the spring force of an armature spring (7) which is larger than that of the valve spring (3). According to the invention, the spring plate (4) has a first abutment face (9) for limiting the opening travel of the valve closure element (2) and a second abutment face (10) for mechanically coupling to the armature (6). The invention also relates to a high-pressure pump having such an intake valve.

Abstract: An electromagnet of an electromagnetically actuated fluid valve includes a magnet core that receives a coil, and an armature unit that can be moved axially relative to the coil in the magnet core. The electromagnet further has a device for damping a stop of the armature unit against the magnet core. The device has a flow cross-section for a medium, the flow cross-section decreasing when the armature unit is moved. The cross-section can be formed by a cone that interacts with a counter surface.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.

Abstract: A photo-acoustic gas sensor is disclosed. The photo-acoustic gas sensor includes a substrate, a light emitter unit supported by the substrate, the light emitter unit including a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit supported by the substrate, the detector unit including a microphone, wherein the beam of light pulses traverses an area intended to accommodate the gas and the microphone can receive a signal oscillating with the repetition frequency.

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.