Patents by Inventor Stefan Kolb

Stefan Kolb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170110505
    Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
    Type: Application
    Filed: December 27, 2016
    Publication date: April 20, 2017
    Inventors: Stefan Kolb, Klemens Pruegl, Juergen Zimmer
  • Patent number: 9598277
    Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: March 21, 2017
    Assignee: Infineon Technologies AG
    Inventors: Bernhard Winkler, Andreas Zankl, Klemens Pruegl, Stefan Kolb
  • Publication number: 20170074834
    Abstract: A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
    Type: Application
    Filed: November 2, 2016
    Publication date: March 16, 2017
    Inventors: Alfons Dehe, Stefan Kolb, Horst Theuss
  • Publication number: 20170067859
    Abstract: An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a light emitter to emit light along a transmission path to a gas and an acoustic sensor element configured to detect an acoustic signal emitted from the gas based on the received light. Furthermore, the apparatus includes a sensing unit configured to detect the light transmitted along the transmission path and to provide an output signal, and a calibration unit to receive the output signal from the sensing unit and to provide a calibration information based on the output signal received from the sensing unit.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 9, 2017
    Applicant: Infineon Technologies AG
    Inventors: Stefan KOLB, Alfons DEHE, Jochen HUBER, Franz JOST, Horst THEUSS, Juergen WOELLENSTEIN
  • Publication number: 20170062704
    Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
    Type: Application
    Filed: November 11, 2016
    Publication date: March 2, 2017
    Inventors: Stefan Kolb, Markus Eckinger
  • Patent number: 9570676
    Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: February 14, 2017
    Assignee: Infineon Technologies AG
    Inventors: Stefan Kolb, Klemens Pruegl, Juergen Zimmer
  • Patent number: 9570659
    Abstract: A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: February 14, 2017
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Stefan Kolb, Horst Theuss, Dirk Meinhold
  • Publication number: 20160377569
    Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.
    Type: Application
    Filed: June 24, 2015
    Publication date: December 29, 2016
    Inventors: Vijaye Kumar Rajaraman, Yonsuang Arnanthigo, Alfons Dehe, Stefan Kolb
  • Patent number: 9527725
    Abstract: A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: December 27, 2016
    Assignee: Infineon Technologies AG
    Inventors: Boris Binder, Bernd Foeste, Thoralf Kautzsch, Stefan Kolb, Marco Mueller
  • Patent number: 9520551
    Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: December 13, 2016
    Assignee: Infineon Tecnologies AG
    Inventors: Stefan Kolb, Markus Eckinger
  • Patent number: 9513261
    Abstract: A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: December 6, 2016
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Stefan Kolb, Horst Theuss
  • Publication number: 20160351800
    Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
    Type: Application
    Filed: July 21, 2016
    Publication date: December 1, 2016
    Inventors: Stefan Kolb, Klemens Pruegl, Juergen Zimmer
  • Publication number: 20160313288
    Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.
    Type: Application
    Filed: April 22, 2016
    Publication date: October 27, 2016
    Inventors: Horst Theuss, Gottfried Beer, Sebastian Beer, Alfons Dehe, Franz Jost, Stefan Kolb, Guenther Ruhl, Rainer Markus Schaller
  • Publication number: 20160305571
    Abstract: The invention relates to an electromagnet 1 of an electromagnetically actuated fluid valve 2. The electromagnet 1 has a magnet core 17 which receives a coil 18 and an armature unit 19 which can be moved axially to the coil 18 in the magnet core 17. The electromagnet further has a device for damping a stop of the armature unit 19 against the magnet core 17. According to the invention, an electromagnet 1 is provided which is permanently improved with respect to the noise emanating from said electromagnet. This is achieved in that the device has a flow cross-section 28 for a medium, said flow cross-section decreasing when the armature unit 19 is moved. The cross-section is formed by a cone 26 which interacts with a counter surface 27.
    Type: Application
    Filed: December 2, 2014
    Publication date: October 20, 2016
    Inventors: Achim Meisiek, Stefan Kolb
  • Publication number: 20160305570
    Abstract: The invention relates to an electromagnetically actuated valve (1), comprising a valve piston (3) bearing a valve plate (2). A spring plate (14) is fastened to the valve piston (3), against which spring plate a valve spring (15) that moves the valve (1) into a closed position lies. The valve also comprises an electromagnet (16), which has a coil (18) and an armature (19) that is arranged on an armature pin (20). The armature pin (20) interacts with the valve piston (3) by means of a contact point. According to the invention, an electromagnetically actuated valve (1) is provided whose function is improved while a low level of structural complexity is attained. This is achieved in that the contact point has a diameter that is enlarged in relation to the diameter of the armature pin (20) and of the valve piston (3) and is planar. Thus, the contact pressure is reduced in this region.
    Type: Application
    Filed: October 21, 2014
    Publication date: October 20, 2016
    Inventors: Achim Meisiek, Stefan Kolb
  • Publication number: 20160282259
    Abstract: Shown is a gas sensor including a sensor element, a measurement chamber and an emitter element. The sensor element has a MEMS membrane which is arranged in a first substrate region. Furthermore, the measurement chamber is embodied to receive a measurement gas.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 29, 2016
    Inventors: Stefan Kolb, Alfons Dehe, Jochen Huber, Franz Jost, Horst Theuss, Wilhelm Wiedmeier, Juergen Woellenstein
  • Publication number: 20160268498
    Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.
    Type: Application
    Filed: March 14, 2016
    Publication date: September 15, 2016
    Applicant: Infineon Technologies AG
    Inventors: Markus ECKINGER, Stefan KOLB
  • Patent number: 9423472
    Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: August 23, 2016
    Assignee: Infineon Technologies AG
    Inventors: Stefan Kolb, Klemens Pruegl, Juergen Zimmer
  • Publication number: 20160109536
    Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
    Type: Application
    Filed: December 17, 2015
    Publication date: April 21, 2016
    Inventors: Stefan Kolb, Klemens Pruegl, Juergen Zimmer
  • Publication number: 20160060105
    Abstract: A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.
    Type: Application
    Filed: August 21, 2015
    Publication date: March 3, 2016
    Inventors: Stefan KOLB, Andreas MEISER, Till SCHLOESSER, Wolfgang WERNER