Abstract: A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.

Abstract: A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract: Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.

Abstract: A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area.

Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

Abstract: A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.

Abstract: A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.

Abstract: Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.

Abstract: Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width.

Abstract: A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area.

Abstract: A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.

Abstract: Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width.

Abstract: A blood donation device with a receptacle for a blood donation container and a control section at which utensils required by the operator can be accommodated and/or by means of which parameters of the donation process can be varied, detected and/or retrieved. Bending of the operator to the blood donation device is avoided by the fact that the control section is arranged in an elevated position with respect to the receptacle of the blood donation device.

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

Abstract: An acceleration sensor includes a deflectable pressure measuring diaphragm and a counter-structure, which is deflectable as against the pressure measuring diaphragm. The acceleration sensor includes a detection means for detecting a deflection of the pressure measuring diaphragm as against the counter-structure. Further, a test mass is connected to the pressure measuring diaphragm or the counter-structure in order to be deflected from an idle position depending on an acceleration applied. The deflection of the test mass results in a change of the distance between the pressure measuring diaphragm and the counter-structure, which is detectable by the detection means.

Abstract: This invention refers to a supporting structure (10) for sheet material as sheet metal material (100) cut out by a laser device (200) located above the sheet material and focused on the same, with means of movement between the laser device and the sheet material and/or supporting structure. The supporting structure substantially comprises vertically mounted parallel rows of identical narrow sheet strips (12), each having raised integrated support areas (22) for the sheet material (100) between recessed grooves (20). To increase the life time of the sheet strips and therefore the life of the supporting structure, and at the same time to prevent damage to the underside of the sheet material as sheet metal, needles (24) are set onto the integrated support areas (22) of the sheet strips (12), the free ends of which form points of support (26) for the sheet material (100) laid upon them.

Abstract: This invention refers to a supporting structure (10) for sheet material as sheet metal material (100) cut out by a laser device (200) located above the sheet material and focused on the same, with means of movement between the laser device and the sheet material and/or supporting structure. The supporting structure substantially comprises vertically mounted parallel rows of identical narrow sheet strips (12), each having raised integrated support areas (22) for the sheet material (100) between recessed grooves (20).

Abstract: An acceleration sensor includes a deflectable pressure measuring diaphragm and a counter-structure, which is deflectable as against the pressure measuring diaphragm. The acceleration sensor includes a detection means for detecting a deflection of the pressure measuring diaphragm as against the counter-structure. Further, a test mass is connected to the pressure measuring diaphragm or the counter-structure in order to be deflected from an idle position depending on an acceleration applied. The deflection of the test mass results in a change of the distance between the pressure measuring diaphragm and the counter-structure, which is detectable by the detection means.

Abstract: The invention relates to a blood donation device with a receptacle for a blood donation container and a control section at which utensils required by the operator can be accommodated and/or by means of which parameters of the donation process can be varied, detected and/or retrieved. Bending of the operator to the blood donation device which is normally arranged in the region of the floor is avoided according to the invention by the fact that the control section is arranged in an elevated position with respect to the receptacle of the blood donation device.