Abstract: The invention relates to a method of securing an integrated circuit during its fabrication on a wafer, said method including the following steps: delimitation of said wafer of the integrated circuit (1) into a first zone called a standard zone (5a) and a second zone called a security zone (5b), and creation of a random connection tracks network (7b) in said security zone (5b) configured to interconnect a set of conducting nodes (9b) thus forming a physical unclonable function modelled by random electrical continuity that can be queried through said set of conducting nodes using a challenge-response authentication protocol.

Abstract: A method for securing an integrated circuit during the realization thereof, including the following steps: delimiting the integrated circuit into a first zone referred to as standard zone and into a second zone referred to as security zone, forming of a set of vias in the security zone, and introducing of a layer loaded with contaminant particles configured to randomly obstruct a portion of the vias, thus forming a random interconnection structure in the security zone, the random interconnection structure creating a physical unclonable function.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for determining at least one reflow parameter for obtaining a structure approximating a sought structure by reflowing an initial structure different to the sought structure, the initial structure including at least one pattern formed in a thermo-deformable layer arranged on a substrate. The thermo-deformable layer forms a residual layer surrounding each pattern and from which each pattern extends such that each pattern has an interface only with the surrounding medium. The method includes: predicting progression over time of geometry of the initial structure subject to reflow, to obtain a plurality of predicted structures each associated with reflow parameters including at least a reflow time and a reflow temperature; computing correlation values of the geometry of each predicted structure with respect to the sought structure; identifying reflow parameters for obtaining the predicted structure offering a highest correlation value.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for securing an integrated circuit during the realization thereof, including the following steps: delimiting the integrated circuit into a first zone referred to as standard zone and into a second zone referred to as security zone, forming of a set of vias in the security zone, and introducing of a layer loaded with contaminant particles configured to randomly obstruct a portion of the vias, thus forming a random interconnection structure in the security zone, the random interconnection structure creating a physical unclonable function.

Abstract: A method for producing at least one pattern in a substrate is provided, including providing a substrate having a front face surmounted by at least one masking layer carrying at least one mask pattern, carrying out an ion implantation of the substrate so as to form at least one first zone having a resistivity ?1 less than a resistivity ?2 of at least one second non-modified zone, after the ion implantation step, immersing the substrate in an electrolyte, and removing the at least one first zone selectively at the at least one second zone, the removing including at least an application of an electrochemistry step to the substrate to cause a porosification of the at least one first zone selectively at the at least one second zone.

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns

Abstract: A method for functionalising a substrate intended for the self-assembly of a block copolymer, includes depositing on the surface of a substrate a layer of a first polymer material, the first polymer having a first chemical affinity with respect to the block copolymer; grafting one part only of the first polymer material layer onto the surface of the substrate; printing, using a mould, patterns in a sacrificial layer arranged above the grafted part of the first polymer material layer; transferring the patterns of the sacrificial layer into the grafted part of the first polymer material layer, until the substrate is reached; and removing at least one part of the sacrificial layer by wet etching, so as to uncover the grafted part of the first polymer material layer.

Abstract: The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least: a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411?, 411?) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step; c) a step of removing (461, 462) the modified zones (411

Abstract: A method for producing patterns in a layer to be etched, from a stack including at least the layer to be etched and a masking layer overlying the layer to be etched, with the masking layer having at least one pattern. The method includes modifying a first area of the layer to be etched by ion implantation through the masking layer; depositing a buffer layer to cover the pattern of the masking layer; modifying another area of the layer to be etched, different from the first area, by ion implantation through the buffer layer, to a depth of the layer to be etched greater than the implantation depth of the preceding step of modifying; removing the buffer layer; removing the masking layer; removing the modified areas by etching them selectively to the non-modified areas of the layer to be etched.

Abstract: The invention relates to a method of securing an integrated circuit during its fabrication on a wafer, said method including the following steps: delimitation of said wafer of the integrated circuit (1) into a first zone called a standard zone (5a) and a second zone called a security zone (5b), and creation of a random connection tracks network (7b) in said security zone (5b) configured to interconnect a set of conducting nodes (9b) thus forming a physical unclonable function modelled by random electrical continuity that can be queried through said set of conducting nodes using a challenge-response authentication protocol.

Abstract: A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Abstract: A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior pattern

Abstract: A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a multilayer deposited on the upper surface, with the multilayer including at least two metal layers separated from each other by an intermediate layer, the intermediate layer being selectively etchable with respect to the metal layers, the multilayer being passed through by at least one trench delimited by ends of each one of the layers of the multilayer, each end of each intermediate layer being set back with respect to the end of each metal layer adjacent to the intermediate layer in such a way that the ends of two successive metal layers form metal pins separated by a cavity; a reflective optical system arranged in each trench, with the reflective optical system being arranged to direct inside the cavities an incident light arriving according to an angle with respect to the upper surface of the support.

Abstract: A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Abstract: A method for producing patterns in a layer to be etched, from a stack including at least the layer to be etched and a masking layer overlying the layer to be etched, with the masking layer having at least one pattern. The method includes modifying a first area of the layer to be etched by ion implantation through the masking layer; depositing a buffer layer to cover the pattern of the masking layer; modifying another area of the layer to be etched, different from the first area, by ion implantation through the buffer layer, to a depth of the layer to be etched greater than the implantation depth of the preceding step of modifying; removing the buffer layer; removing the masking layer; removing the modified areas by etching them selectively to the non-modified areas of the layer to be etched.

Abstract: A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a supporting structure including at least one microstructured pattern, the microstructured pattern including a top and sidewalls, with the sidewalls extending according to a direction secant to the direction of the upper surface; a multilayer arranged on the sidewalls of the microstructured pattern, with the multilayer including at least two pillar layers, separated from each other by an intermediate layer, each intermediate layer having an end set back with respect to an end of each adjacent pillar layer in such a way that the ends of two successive pillar layers form pins separated by a cavity, with the ends of the pillar layers being covered by a metal layer.

Abstract: A method for manufacturing a substrate for surface-enhanced Raman spectography, includes creating a supporting structure including microstructured pattern including a top and sidewalls; depositing a multilayer on the supporting structure with the multilayer including two metal layers and an intermediate layer arranged between the two metal layers, with the intermediate layer being carried out in a material that can be selectively etched with respect to the metal layers; etching a portion of the multilayer deposited on the top of the microstructured pattern in such a way as to expose ends each layer of the multilayer; selective etching of the ends of the intermediate layers in such a way as to form cavities between the ends of two successive metal layers.