Patents by Inventor Stefan Landis

Stefan Landis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9523910
    Abstract: The present invention relates to a nanoimprint lithography method.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: December 20, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sebastien Pauliac, Stefan Landis
  • Patent number: 9515205
    Abstract: A method for creating electrically conducting or semiconducting patterns on a textured surface including plural reliefs of amplitude greater than or equal to 100 nanometers, including: preparing a substrate during which at least the textured surface of the substrate is made electrically conducting; coating during which at least one layer of an imprintable material is laid on the textured surface, made electrically conducting, of the substrate; pressing a mold including valleys or protrusions to transfer the valleys or the protrusions of the mold into the imprintable material to form patterns therein; removing the mold while leaving the imprint of the patterns in the imprintable material; exposing the textured surface, made electrically conducting, of the substrate, at a bottom of the patterns; and electrically depositing an electrically conducting or semiconducting material into the patterns to form conducting or semiconducting patterns.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: December 6, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE AUX ENERGIES ALTERNATIVES
    Inventors: Carole Pernel, Nicolas Chaix, Stefan Landis
  • Publication number: 20160195476
    Abstract: A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a supporting structure including at least one microstructured pattern, the microstructured pattern including a top and sidewalls, with the sidewalls extending according to a direction secant to the direction of the upper surface; a multilayer arranged on the sidewalls of the microstructured pattern, with the multilayer including at least two pillar layers, separated from each other by an intermediate layer, each intermediate layer having an end set back with respect to an end of each adjacent pillar layer in such a way that the ends of two successive pillar layers form pins separated by a cavity, with the ends of the pillar layers being covered by a metal layer.
    Type: Application
    Filed: January 5, 2016
    Publication date: July 7, 2016
    Inventors: Stefan LANDIS, Vincent REBOUD
  • Publication number: 20160195475
    Abstract: A method for manufacturing a substrate for surface-enhanced Raman spectography, includes creating a supporting structure including microstructured pattern including a top and sidewalls; depositing a multilayer on the supporting structure with the multilayer including two metal layers and an intermediate layer arranged between the two metal layers, with the intermediate layer being carried out in a material that can be selectively etched with respect to the metal layers; etching a portion of the multilayer deposited on the top of the microstructured pattern in such a way as to expose ends each layer of the multilayer; selective etching of the ends of the intermediate layers in such a way as to form cavities between the ends of two successive metal layers.
    Type: Application
    Filed: January 5, 2016
    Publication date: July 7, 2016
    Inventors: Stefan LANDIS, Vincent REBOUD
  • Publication number: 20160195468
    Abstract: A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a multilayer deposited on the upper surface, with the multilayer including at least two metal layers separated from each other by an intermediate layer, the intermediate layer being selectively etchable with respect to the metal layers, the multilayer being passed through by at least one trench delimited by ends of each one of the layers of the multilayer, each end of each intermediate layer being set back with respect to the end of each metal layer adjacent to the intermediate layer in such a way that the ends of two successive metal layers form metal pins separated by a cavity; a reflective optical system arranged in each trench, with the reflective optical system being arranged to direct inside the cavities an incident light arriving according to an angle with respect to the upper surface of the support.
    Type: Application
    Filed: January 5, 2016
    Publication date: July 7, 2016
    Inventors: Stefan LANDIS, Vincent REBOUD
  • Patent number: 9236540
    Abstract: The light-emitting diode includes first and second layers of semiconductor material, having opposite conductivity types, an active light-emitting area located between the first and second layers of semiconductor material, an electrode arranged on the first layer of semiconductor material and a photonic crystal formed in the first layer of semiconductor material. The photonic crystal and the electrode are separated by a distance optimized to simultaneously promote the electric injection and minimize the light absorption in the LED.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: January 12, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent Reboud, Stefan Landis, Frederic-Xavier Gaillard
  • Patent number: 8999440
    Abstract: A structure, method of manufacturing a structure, and methods of using a structure including a graphene sheet is disclosed. According to one aspect, the grapheme sheet is provided, on one of the faces of the structure, with a plurality of metal pins. The metal pins being separated from one another by a dielectric medium chosen from air and dielectric materials. The method including the steps of synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins that are disposed on a membrane made from dielectric material or integrated in the membrane. The growth being catalyzed by the metal pins. According to some aspects, the membrane is removed from the structure. The structure may be used, for example, in the fields of micro- and nanoelectronics, micro- and nanoelectronic engineering, spintronics, photovoltaics, light emitting diode display, or the like.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: April 7, 2015
    Assignees: Centre National de la Recherche Scientifique, Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Aziz Zenasni, Johann Coraux, Valentina Ivanova-Hristova, Stefan Landis, Carole Pernel
  • Publication number: 20150069443
    Abstract: The light-emitting diode includes first and second layers of semiconductor material, having opposite conductivity types, an active light-emitting area located between the first and second layers of semiconductor material, an electrode arranged on the first layer of semiconductor material and a photonic crystal formed in the first layer of semiconductor material. The photonic crystal and the electrode are separated by a distance optimized to simultaneously promote the electric injection and minimize the light absorption in the LED.
    Type: Application
    Filed: September 9, 2014
    Publication date: March 12, 2015
    Inventors: Vincent REBOUD, Stefan LANDIS, Frederic-Xavier GAILLARD
  • Patent number: 8974215
    Abstract: A heating mold for thermal nanoimprint lithography is disclosed. According to one aspect, the mold includes a resistive heating element and collecting element for collecting the electromagnetic energy of a variable electromagnetic field emitted by a source located outside the mold. The collecting element being connected to the resistive heating element in which the electromagnetic energy is dissipated. A method for manufacturing the mold, a thermal nanoimprint lithography device including the mold, and a a method for preparing a substrate including a surface nanostructured by a thermal nanoimprint lithography technique using the mold is applied are also disclosed.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: March 10, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Stefan Landis, Sergio Nicoletti
  • Patent number: 8864489
    Abstract: A heating mould for thermal nanoimprint lithography, a process of producing the heating mould, and a process for producing a nanostructured substrate which include the heating mould. The heating mould includes the heating mould. The heating mould includes a substrate having a first principal surface and a second principal surface, and a through-cavity extending from a first orifice in the first principal surface up to a second orifice in the second principal surface. The mould also includes a heating layer, an electrically and thermally insulating layer which covers the heating layer and, at least partially, imprint patterns, and leads for supplying an electric current to the heating layer.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: October 21, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Stefan Landis, Sergio Nicoletti
  • Publication number: 20140217625
    Abstract: A process for producing an electromagnetic radiation filter includes at least two color filters, each formed from a stack on a stiff substrate of at least one dielectric layer and of metal layers in alternation, in order to transmit at least two colors. The process comprises depositing on said substrate a first metal layer, depositing on said first metal layer a first mechanically deformable dielectric layer having a set thickness e0, depositing on said first dielectric layer a second metal layer, imprinting the stack obtained with a mold applied to the entire surface of the stack and allowing material to be simultaneously moved in at least two zones of the stack, wherein in said at least two zones, two different thicknesses e1, e2 of said first dielectric layer are obtained, these two thicknesses being different from the set thickness e0 in the second depositing step, and removing the mold.
    Type: Application
    Filed: July 4, 2012
    Publication date: August 7, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jérôme Hazart, Stefan Landis
  • Patent number: 8778195
    Abstract: A method to fabricate an imprint mould in three dimensions including at least: a) forming at least one trench, of width W and depth h, in a substrate, thereby forming three surfaces including, a bottom of the at least one trench, sidewalls of the at least one trench, and a remaining surface of the substrate, called top of the substrate; b) forming alternate layers in the at least one trench, each having at least one portion perpendicular to the substrate, in a first material and in a second material which can be selectively etched relative to the first material; and c) selectively etching said portions of the layers perpendicular to the substrate.
    Type: Grant
    Filed: March 2, 2010
    Date of Patent: July 15, 2014
    Assignee: Commissariat a l' Energie Atomique
    Inventor: Stéfan Landis
  • Publication number: 20140183778
    Abstract: A method for making a conducting structure comprising steps of: forming on a given face of the support comprising at least one conducting element, at least one area for absorbing stresses based on a dielectric material, forming at least one aperture in said dielectric material by applying a mold on said dielectric material, said aperture being provided with inclined walls relatively to a normal to the main plane of said support, the bottom of said aperture revealing said conducting element, filling said aperture with a conducting material.
    Type: Application
    Filed: December 17, 2013
    Publication date: July 3, 2014
    Applicants: STMICROELECTRONICS (CROLLES 2) SAS, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Jean-Philippe COLONNA, Christophe AUMONT, Stefan LANDIS
  • Patent number: 8738307
    Abstract: A method is provided for determining the viscosity of thin films which exhibit a viscous behavior at a measurement temperature, notably for polymer resins above their glass transition temperature. A thin layer of material is formed on a substrate, a known geometrical pattern is impressed in the thin layer by molding or etching, the thin layer being in the solid state at the end of the impression step. The initial topography of the impressed pattern is measured over the entire length of the pattern along a determined direction, the film is baked at the measurement temperature Tm for a determined creep time tflu, and the resulting topography of the crept pattern is measured. Mathematical processing of the topography measurements is carried out in order to deduce a value of viscosity at the measurement temperature therefrom. The impressed pattern at the start is aperiodic.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: May 27, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Stefan Landis, Etienne Rognin
  • Patent number: 8734145
    Abstract: A mold for nanoimprint lithography assisted by a determined wavelength is disclosed. According to some aspects, a layer made from a first material including, on a first face, a layer made from a second rigid material in which n structured zones with micrometric or nanometric patterns (n?1) are made, and, on the face opposite said first face, a layer made from a third rigid material in which n recesses are formed, opposite the n structured zones. The n recesses are filled with a fourth material to form n portions. The transmittance at the determined wavelength of the layer of third material is lower than the transmittance of any one of the n portions; and the transmittance of the layers of first, second, and third materials at the determined wavelength ?det is such that the transmission of a light with determined wavelength ?det through said layers is lower than the transmission of the light through any one of the n portions and the layers of first and second materials.
    Type: Grant
    Filed: January 25, 2011
    Date of Patent: May 27, 2014
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventor: Stefan Landis
  • Publication number: 20140110591
    Abstract: The invention proposes a device (10) for characterizing an ionizing radiation used in an ambient medium having a first refraction index (n1), the device (10) comprising: a scintillator material (12) delimited by a wall (28), the scintillator material (12) generating photons under the effect of an ionizing radiation, the scintillator material (12) having a second refraction index (n2), and a guide layer (16) in contact with at least part of the wall (28), the guide layer (16) guiding, toward a predetermined zone, the photons generated by the scintillator material (12) and having an angle of incidence relative to the part of the wall (28) greater than or equal to the arcsin of the ratio of the first refraction index (n1) to the second refraction index (n2).
    Type: Application
    Filed: October 21, 2013
    Publication date: April 24, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent REBOUD, Stefan Landis
  • Publication number: 20140034125
    Abstract: A method for creating electrically conducting or semiconducting patterns on a textured surface including plural reliefs of amplitude greater than or equal to 100 nanometers, including: preparing a substrate during which at least the textured surface of the substrate is made electrically conducting; coating during which at least one layer of an imprintable material is laid on the textured surface, made electrically conducting, of the substrate; pressing a mold including valleys or protrusions to transfer the valleys or the protrusions of the mold into the imprintable material to form patterns therein; removing the mold while leaving the imprint of the patterns in the imprintable material; exposing the textured surface, made electrically conducting, of the substrate, at a bottom of the patterns; and electrically depositing an electrically conducting or semiconducting material into the patterns to form conducting or semiconducting patterns.
    Type: Application
    Filed: March 5, 2012
    Publication date: February 6, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Carole Pernel, Nicolas Chaix, Stefan Landis
  • Publication number: 20130187312
    Abstract: The present invention relates to a nanoimprint lithography method.
    Type: Application
    Filed: May 26, 2011
    Publication date: July 25, 2013
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sebastien Pauliac, Stefan Landis
  • Patent number: 8486514
    Abstract: A nano-imprint device including at least: a substrate, having a surface, on the substrate, a plurality of nano-trenches parallel two by two, each nano-trench extending in a longitudinal direction and being delimited laterally by side walls, the nano-trenches and the side walls being directed substantially perpendicular to the surface of the substrate, each nano-trench comprising a bottom surface with at least one first and one second level in a direction perpendicular to the substrate, respectively of depth h1 and h2>h1, measured relative to the top of the side walls, and the bottom surfaces of the nano-trenches, of the least deep level (h1) being in a first type of material, the side walls being in a second type of material.
    Type: Grant
    Filed: March 2, 2010
    Date of Patent: July 16, 2013
    Assignee: Commissariat a l'Energie Atomque
    Inventors: Stéfan Landis, Yves Morand
  • Patent number: 8367434
    Abstract: Method for fabricating a substrate comprising a nanostructured surface for an organic light emitting diode OLED, in which a layer of an organic resin or of a mineral material having a first nanostructuration is prepared by nano-imprint; the organic resin or mineral material is heated to a temperature equal to or higher than its glass transition temperature Tg or its melting point, and the organic resin or the mineral material is maintained at this temperature for a time tR called annealing time, whereby the organic resin or the mineral material flows and the first nanostructuration of the layer of organic resin or of mineral material is modified to produce a second nanostructuration; the organic resin or the mineral material is cooled.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: February 5, 2013
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Alexandre Mary, Luc Andre, Stefan Landis